JP4364799B2 - ナノ結晶を形成する方法 - Google Patents

ナノ結晶を形成する方法 Download PDF

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Publication number
JP4364799B2
JP4364799B2 JP2004532572A JP2004532572A JP4364799B2 JP 4364799 B2 JP4364799 B2 JP 4364799B2 JP 2004532572 A JP2004532572 A JP 2004532572A JP 2004532572 A JP2004532572 A JP 2004532572A JP 4364799 B2 JP4364799 B2 JP 4364799B2
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Japan
Prior art keywords
vapor deposition
chemical vapor
deposition chamber
nanocrystals
dielectric
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Expired - Lifetime
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JP2004532572A
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English (en)
Japanese (ja)
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JP2005537660A (ja
JP2005537660A5 (enExample
Inventor
エイ． ラオ、ラジェッシュ
ムラリダー、ラマチャンドラン
ピー． マーチャント、タッシャー
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NXP USA Inc
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NXP USA Inc
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H10D30/6893—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode wherein the floating gate has multiple non-connected parts, e.g. multi-particle floating gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Chemical Vapour Deposition (AREA)
JP2004532572A 2002-08-30 2003-05-22 ナノ結晶を形成する方法 Expired - Lifetime JP4364799B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/231,556 US6808986B2 (en) 2002-08-30 2002-08-30 Method of forming nanocrystals in a memory device
PCT/US2003/016289 WO2004021423A1 (en) 2002-08-30 2003-05-22 Method of forming nanocrystals

Publications (3)

Publication Number Publication Date
JP2005537660A JP2005537660A (ja) 2005-12-08
JP2005537660A5 JP2005537660A5 (enExample) 2006-06-22
JP4364799B2 true JP4364799B2 (ja) 2009-11-18

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ID=31976735

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004532572A Expired - Lifetime JP4364799B2 (ja) 2002-08-30 2003-05-22 ナノ結晶を形成する方法

Country Status (8)

Country Link
US (1) US6808986B2 (enExample)
EP (1) EP1490896A1 (enExample)
JP (1) JP4364799B2 (enExample)
KR (1) KR20050031455A (enExample)
CN (1) CN100336175C (enExample)
AU (1) AU2003248563A1 (enExample)
TW (1) TWI231529B (enExample)
WO (1) WO2004021423A1 (enExample)

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US7121474B2 (en) * 2002-06-18 2006-10-17 Intel Corporation Electro-optical nanocrystal memory device
FR2847567B1 (fr) * 2002-11-22 2005-07-01 Commissariat Energie Atomique Procede de realisation par cvd de nano-structures de materiau semi-conducteur sur dielectrique, de tailles homogenes et controlees
KR100526463B1 (ko) * 2003-05-07 2005-11-08 매그나칩 반도체 유한회사 반도체 소자의 제조 방법
TWI276206B (en) * 2003-11-25 2007-03-11 Promos Technologies Inc Method for fabricating flash memory device and structure thereof
US20050258470A1 (en) * 2004-05-20 2005-11-24 Bohumil Lojek Gate stack of nanocrystal memory and method for forming same
US7265036B2 (en) * 2004-07-23 2007-09-04 Applied Materials, Inc. Deposition of nano-crystal silicon using a single wafer chamber
KR100615093B1 (ko) * 2004-08-24 2006-08-22 삼성전자주식회사 나노크리스탈을 갖는 비휘발성 메모리 소자의 제조방법
US20060046383A1 (en) * 2004-09-02 2006-03-02 Shenlin Chen Method for forming a nanocrystal floating gate for a flash memory device
US7327607B2 (en) * 2004-09-09 2008-02-05 Macronix International Co., Ltd. Method and apparatus for operating nonvolatile memory cells in a series arrangement
US7170785B2 (en) * 2004-09-09 2007-01-30 Macronix International Co., Ltd. Method and apparatus for operating a string of charge trapping memory cells
US7327611B2 (en) * 2004-09-09 2008-02-05 Macronix International Co., Ltd. Method and apparatus for operating charge trapping nonvolatile memory
US7307888B2 (en) * 2004-09-09 2007-12-11 Macronix International Co., Ltd. Method and apparatus for operating nonvolatile memory in a parallel arrangement
US7324376B2 (en) * 2004-09-09 2008-01-29 Macronix International Co., Ltd. Method and apparatus for operating nonvolatile memory cells in a series arrangement
US7345920B2 (en) * 2004-09-09 2008-03-18 Macronix International Co., Ltd. Method and apparatus for sensing in charge trapping non-volatile memory
US7813160B2 (en) * 2005-01-11 2010-10-12 The Trustees Of The University Of Pennsylvania Nanocrystal quantum dot memory devices
US20060189079A1 (en) * 2005-02-24 2006-08-24 Merchant Tushar P Method of forming nanoclusters
US20060220094A1 (en) * 2005-03-31 2006-10-05 Bohumil Lojek Non-volatile memory transistor with nanotube floating gate
US7101760B1 (en) 2005-03-31 2006-09-05 Atmel Corporation Charge trapping nanocrystal dielectric for non-volatile memory transistor
US7241695B2 (en) * 2005-10-06 2007-07-10 Freescale Semiconductor, Inc. Semiconductor device having nano-pillars and method therefor
US7269062B2 (en) * 2005-12-09 2007-09-11 Macronix International Co., Ltd. Gated diode nonvolatile memory cell
US7283389B2 (en) * 2005-12-09 2007-10-16 Macronix International Co., Ltd. Gated diode nonvolatile memory cell array
US7272038B2 (en) * 2005-12-09 2007-09-18 Macronix International Co., Ltd. Method for operating gated diode nonvolatile memory cell
US7491599B2 (en) * 2005-12-09 2009-02-17 Macronix International Co., Ltd. Gated diode nonvolatile memory process
US7888707B2 (en) * 2005-12-09 2011-02-15 Macronix International Co., Ltd. Gated diode nonvolatile memory process
KR100837413B1 (ko) * 2006-02-28 2008-06-12 삼성전자주식회사 나노결정을 포함하는 메모리 소자 제조 방법 및 이에 의해제조된 메모리 소자
KR100785015B1 (ko) * 2006-05-18 2007-12-12 삼성전자주식회사 실리콘 나노 결정을 플로팅 게이트로 구비하는 비휘발성메모리 소자 및 그 제조방법
US7445984B2 (en) 2006-07-25 2008-11-04 Freescale Semiconductor, Inc. Method for removing nanoclusters from selected regions
US7432158B1 (en) 2006-07-25 2008-10-07 Freescale Semiconductor, Inc. Method for retaining nanocluster size and electrical characteristics during processing
US20080246101A1 (en) * 2007-04-05 2008-10-09 Applied Materials Inc. Method of poly-silicon grain structure formation
CN101459094B (zh) * 2007-12-13 2010-09-29 中芯国际集成电路制造(上海)有限公司 测量半球形颗粒多晶硅层厚度的方法
US7995384B2 (en) * 2008-08-15 2011-08-09 Macronix International Co., Ltd. Electrically isolated gated diode nonvolatile memory
US7871886B2 (en) * 2008-12-19 2011-01-18 Freescale Semiconductor, Inc. Nanocrystal memory with differential energy bands and method of formation
US7799634B2 (en) * 2008-12-19 2010-09-21 Freescale Semiconductor, Inc. Method of forming nanocrystals
US8536039B2 (en) * 2010-03-25 2013-09-17 Taiwan Semiconductor Manufacturing Co., Ltd. Nano-crystal gate structure for non-volatile memory
JP5330562B2 (ja) * 2010-04-27 2013-10-30 東京エレクトロン株式会社 成膜装置
WO2012090819A1 (ja) * 2010-12-28 2012-07-05 シャープ株式会社 微結晶シリコン膜の製造方法、微結晶シリコン膜、電気素子および表示装置
US8329543B2 (en) * 2011-04-12 2012-12-11 Freescale Semiconductor, Inc. Method for forming a semiconductor device having nanocrystals
US8329544B2 (en) 2011-04-12 2012-12-11 Freescale Semiconductor, Inc. Method for forming a semiconductor device having nanocrystals
US8679912B2 (en) 2012-01-31 2014-03-25 Freescale Semiconductor, Inc. Semiconductor device having different non-volatile memories having nanocrystals of differing densities and method therefor
US8951892B2 (en) 2012-06-29 2015-02-10 Freescale Semiconductor, Inc. Applications for nanopillar structures
CN104952802B (zh) * 2014-03-25 2018-08-10 中芯国际集成电路制造(上海)有限公司 闪存存储单元的形成方法
US9356106B2 (en) * 2014-09-04 2016-05-31 Freescale Semiconductor, Inc. Method to form self-aligned high density nanocrystals
US9929007B2 (en) * 2014-12-26 2018-03-27 Taiwan Semiconductor Manufacturing Co., Ltd. e-Flash Si dot nitrogen passivation for trap reduction
TWI711728B (zh) * 2016-08-29 2020-12-01 聯華電子股份有限公司 形成晶格結構的方法

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Also Published As

Publication number Publication date
CN1596459A (zh) 2005-03-16
TWI231529B (en) 2005-04-21
AU2003248563A1 (en) 2004-03-19
US20040043583A1 (en) 2004-03-04
JP2005537660A (ja) 2005-12-08
CN100336175C (zh) 2007-09-05
KR20050031455A (ko) 2005-04-06
EP1490896A1 (en) 2004-12-29
WO2004021423A1 (en) 2004-03-11
TW200409207A (en) 2004-06-01
US6808986B2 (en) 2004-10-26

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