JP4350227B2 - 半導体結晶成長方法 - Google Patents

半導体結晶成長方法 Download PDF

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Publication number
JP4350227B2
JP4350227B2 JP26469999A JP26469999A JP4350227B2 JP 4350227 B2 JP4350227 B2 JP 4350227B2 JP 26469999 A JP26469999 A JP 26469999A JP 26469999 A JP26469999 A JP 26469999A JP 4350227 B2 JP4350227 B2 JP 4350227B2
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Japan
Prior art keywords
substrate
plane
film
growth
semiconductor crystal
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JP26469999A
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Japanese (ja)
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JP2001093836A (ja
JP2001093836A5 (enExample
Inventor
誠一 宮澤
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Canon Inc
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Canon Inc
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Priority to JP26469999A priority Critical patent/JP4350227B2/ja
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Publication of JP2001093836A5 publication Critical patent/JP2001093836A5/ja
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  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Semiconductor Lasers (AREA)
JP26469999A 1999-09-20 1999-09-20 半導体結晶成長方法 Expired - Fee Related JP4350227B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26469999A JP4350227B2 (ja) 1999-09-20 1999-09-20 半導体結晶成長方法

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Application Number Priority Date Filing Date Title
JP26469999A JP4350227B2 (ja) 1999-09-20 1999-09-20 半導体結晶成長方法

Publications (3)

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JP2001093836A JP2001093836A (ja) 2001-04-06
JP2001093836A5 JP2001093836A5 (enExample) 2006-11-02
JP4350227B2 true JP4350227B2 (ja) 2009-10-21

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JP26469999A Expired - Fee Related JP4350227B2 (ja) 1999-09-20 1999-09-20 半導体結晶成長方法

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3875047B2 (ja) 2001-06-22 2007-01-31 シャープ株式会社 半導体基板の面方位依存性評価方法及びそれを用いた半導体装置
US6967359B2 (en) 2001-09-13 2005-11-22 Japan Science And Technology Agency Nitride semiconductor substrate production method thereof and semiconductor optical device using the same
WO2015083553A1 (ja) * 2013-12-05 2015-06-11 日本ピラー工業株式会社 流体機器
JP7640273B2 (ja) * 2021-02-04 2025-03-05 古河電気工業株式会社 光半導体装置および光半導体装置の製造方法

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JP2001093836A (ja) 2001-04-06

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