JP2001093836A5 - - Google Patents

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Publication number
JP2001093836A5
JP2001093836A5 JP1999264699A JP26469999A JP2001093836A5 JP 2001093836 A5 JP2001093836 A5 JP 2001093836A5 JP 1999264699 A JP1999264699 A JP 1999264699A JP 26469999 A JP26469999 A JP 26469999A JP 2001093836 A5 JP2001093836 A5 JP 2001093836A5
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JP
Japan
Prior art keywords
reference plane
crystal film
semiconductor crystal
substrate
plane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1999264699A
Other languages
English (en)
Japanese (ja)
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JP2001093836A (ja
JP4350227B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP26469999A priority Critical patent/JP4350227B2/ja
Priority claimed from JP26469999A external-priority patent/JP4350227B2/ja
Publication of JP2001093836A publication Critical patent/JP2001093836A/ja
Publication of JP2001093836A5 publication Critical patent/JP2001093836A5/ja
Application granted granted Critical
Publication of JP4350227B2 publication Critical patent/JP4350227B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP26469999A 1999-09-20 1999-09-20 半導体結晶成長方法 Expired - Fee Related JP4350227B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26469999A JP4350227B2 (ja) 1999-09-20 1999-09-20 半導体結晶成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26469999A JP4350227B2 (ja) 1999-09-20 1999-09-20 半導体結晶成長方法

Publications (3)

Publication Number Publication Date
JP2001093836A JP2001093836A (ja) 2001-04-06
JP2001093836A5 true JP2001093836A5 (enExample) 2006-11-02
JP4350227B2 JP4350227B2 (ja) 2009-10-21

Family

ID=17406967

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26469999A Expired - Fee Related JP4350227B2 (ja) 1999-09-20 1999-09-20 半導体結晶成長方法

Country Status (1)

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JP (1) JP4350227B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3875047B2 (ja) 2001-06-22 2007-01-31 シャープ株式会社 半導体基板の面方位依存性評価方法及びそれを用いた半導体装置
JP4173445B2 (ja) * 2001-09-13 2008-10-29 学校法人 名城大学 窒化物半導体基板、その製造方法、およびそれを用いた半導体発光素子
JPWO2015083553A1 (ja) * 2013-12-05 2017-03-16 日本ピラー工業株式会社 流体機器
JP7640273B2 (ja) * 2021-02-04 2025-03-05 古河電気工業株式会社 光半導体装置および光半導体装置の製造方法

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