JP4342134B2 - 窒化物半導体レーザ素子 - Google Patents

窒化物半導体レーザ素子 Download PDF

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Publication number
JP4342134B2
JP4342134B2 JP2001402089A JP2001402089A JP4342134B2 JP 4342134 B2 JP4342134 B2 JP 4342134B2 JP 2001402089 A JP2001402089 A JP 2001402089A JP 2001402089 A JP2001402089 A JP 2001402089A JP 4342134 B2 JP4342134 B2 JP 4342134B2
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Japan
Prior art keywords
layer
nitride semiconductor
type
active layer
light guide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001402089A
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English (en)
Japanese (ja)
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JP2002261393A (ja
JP2002261393A5 (enExample
Inventor
友弥 柳本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Priority to JP2001402089A priority Critical patent/JP4342134B2/ja
Publication of JP2002261393A publication Critical patent/JP2002261393A/ja
Publication of JP2002261393A5 publication Critical patent/JP2002261393A5/ja
Application granted granted Critical
Publication of JP4342134B2 publication Critical patent/JP4342134B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP2001402089A 2000-12-28 2001-12-28 窒化物半導体レーザ素子 Expired - Fee Related JP4342134B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001402089A JP4342134B2 (ja) 2000-12-28 2001-12-28 窒化物半導体レーザ素子

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000402772 2000-12-28
JP2000-402772 2000-12-28
JP2001402089A JP4342134B2 (ja) 2000-12-28 2001-12-28 窒化物半導体レーザ素子

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007293685A Division JP4441563B2 (ja) 2000-12-28 2007-11-12 窒化物半導体レーザ素子

Publications (3)

Publication Number Publication Date
JP2002261393A JP2002261393A (ja) 2002-09-13
JP2002261393A5 JP2002261393A5 (enExample) 2005-08-04
JP4342134B2 true JP4342134B2 (ja) 2009-10-14

Family

ID=26607198

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001402089A Expired - Fee Related JP4342134B2 (ja) 2000-12-28 2001-12-28 窒化物半導体レーザ素子

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JP (1) JP4342134B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE602004029910D1 (de) * 2003-08-26 2010-12-16 Sony Corp LICHTEMITTIERENDES BAUELEMENT AUS GaN III-V VERBINDUNGSHALBLEITERMATERIAL UND ZUGEHÖRIGES HERSTELLUNGSVERFAHREN
JP2010135724A (ja) * 2008-10-27 2010-06-17 Mitsubishi Electric Corp 半導体レーザ装置
WO2011021264A1 (ja) * 2009-08-17 2011-02-24 株式会社 東芝 窒化物半導体発光素子
US9124071B2 (en) 2012-11-27 2015-09-01 Nichia Corporation Nitride semiconductor laser element
DE102015100029A1 (de) * 2015-01-05 2016-07-07 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
JP6225945B2 (ja) 2015-05-26 2017-11-08 日亜化学工業株式会社 半導体レーザ素子
JP6932345B2 (ja) * 2017-03-27 2021-09-08 学校法人 名城大学 半導体多層膜反射鏡及び垂直共振器型発光素子
JP6536649B2 (ja) * 2017-10-10 2019-07-03 日亜化学工業株式会社 半導体レーザ素子
JP2023031164A (ja) * 2021-08-24 2023-03-08 ヌヴォトンテクノロジージャパン株式会社 窒化物系半導体発光素子

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JP2002261393A (ja) 2002-09-13

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