JP4330737B2 - 真空処理方法 - Google Patents
真空処理方法 Download PDFInfo
- Publication number
- JP4330737B2 JP4330737B2 JP33224299A JP33224299A JP4330737B2 JP 4330737 B2 JP4330737 B2 JP 4330737B2 JP 33224299 A JP33224299 A JP 33224299A JP 33224299 A JP33224299 A JP 33224299A JP 4330737 B2 JP4330737 B2 JP 4330737B2
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- substrate
- temperature
- vacuum processing
- electrostatic chuck
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000003672 processing method Methods 0.000 title claims description 9
- 238000001179 sorption measurement Methods 0.000 claims description 43
- 238000010438 heat treatment Methods 0.000 claims description 27
- 238000001816 cooling Methods 0.000 claims description 21
- 238000004544 sputter deposition Methods 0.000 claims description 16
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000009489 vacuum treatment Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 description 66
- 235000012431 wafers Nutrition 0.000 description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 28
- 229910052710 silicon Inorganic materials 0.000 description 28
- 239000010703 silicon Substances 0.000 description 28
- 230000008646 thermal stress Effects 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 8
- 239000010408 film Substances 0.000 description 8
- 230000008602 contraction Effects 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Physical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33224299A JP4330737B2 (ja) | 1999-11-24 | 1999-11-24 | 真空処理方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33224299A JP4330737B2 (ja) | 1999-11-24 | 1999-11-24 | 真空処理方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001152335A JP2001152335A (ja) | 2001-06-05 |
| JP2001152335A5 JP2001152335A5 (enExample) | 2006-11-02 |
| JP4330737B2 true JP4330737B2 (ja) | 2009-09-16 |
Family
ID=18252776
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33224299A Expired - Fee Related JP4330737B2 (ja) | 1999-11-24 | 1999-11-24 | 真空処理方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4330737B2 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010056353A (ja) * | 2008-08-29 | 2010-03-11 | Renesas Technology Corp | 半導体装置の製造方法 |
| JP5486970B2 (ja) * | 2010-03-17 | 2014-05-07 | 東京エレクトロン株式会社 | 基板脱着方法及び基板処理装置 |
| JP5794905B2 (ja) * | 2011-12-07 | 2015-10-14 | 株式会社アルバック | リフロー法及び半導体装置の製造方法 |
| JP6217233B2 (ja) * | 2013-08-21 | 2017-10-25 | 住友電気工業株式会社 | 半導体装置の製造方法 |
| JP6248684B2 (ja) * | 2014-02-19 | 2017-12-20 | 住友電気工業株式会社 | 半導体装置の製造方法 |
| JP6212434B2 (ja) | 2014-05-13 | 2017-10-11 | 住友電気工業株式会社 | 半導体装置の製造方法 |
| JP6558567B2 (ja) * | 2015-03-31 | 2019-08-14 | パナソニックＩｐマネジメント株式会社 | プラズマ処理装置およびプラズマ処理方法 |
| JP6861579B2 (ja) * | 2017-06-02 | 2021-04-21 | 東京エレクトロン株式会社 | プラズマ処理装置、静電吸着方法および静電吸着プログラム |
| JP7304188B2 (ja) | 2019-03-29 | 2023-07-06 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
-
1999
- 1999-11-24 JP JP33224299A patent/JP4330737B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2001152335A (ja) | 2001-06-05 |
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