JP4329505B2 - 磁気メモリを用いた磁気メモリ装置 - Google Patents

磁気メモリを用いた磁気メモリ装置 Download PDF

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Publication number
JP4329505B2
JP4329505B2 JP2003389105A JP2003389105A JP4329505B2 JP 4329505 B2 JP4329505 B2 JP 4329505B2 JP 2003389105 A JP2003389105 A JP 2003389105A JP 2003389105 A JP2003389105 A JP 2003389105A JP 4329505 B2 JP4329505 B2 JP 4329505B2
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Japan
Prior art keywords
memory
layer
magnetic
stage
magnetization
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Expired - Fee Related
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JP2003389105A
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Japanese (ja)
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JP2004140386A (ja
JP2004140386A5 (https=
Inventor
雅祥 平本
望 松川
明弘 小田川
三男 里見
康成 杉田
良男 川島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Priority to JP2003389105A priority Critical patent/JP4329505B2/ja
Publication of JP2004140386A publication Critical patent/JP2004140386A/ja
Publication of JP2004140386A5 publication Critical patent/JP2004140386A5/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
JP2003389105A 2001-06-19 2003-11-19 磁気メモリを用いた磁気メモリ装置 Expired - Fee Related JP4329505B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003389105A JP4329505B2 (ja) 2001-06-19 2003-11-19 磁気メモリを用いた磁気メモリ装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001184480 2001-06-19
JP2003389105A JP4329505B2 (ja) 2001-06-19 2003-11-19 磁気メモリを用いた磁気メモリ装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2002178745A Division JP3527230B2 (ja) 2001-06-19 2002-06-19 磁気メモリの駆動方法

Publications (3)

Publication Number Publication Date
JP2004140386A JP2004140386A (ja) 2004-05-13
JP2004140386A5 JP2004140386A5 (https=) 2005-09-15
JP4329505B2 true JP4329505B2 (ja) 2009-09-09

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ID=32472439

Family Applications (1)

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JP2003389105A Expired - Fee Related JP4329505B2 (ja) 2001-06-19 2003-11-19 磁気メモリを用いた磁気メモリ装置

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JP (1) JP4329505B2 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7611912B2 (en) * 2004-06-30 2009-11-03 Headway Technologies, Inc. Underlayer for high performance magnetic tunneling junction MRAM
JP4828807B2 (ja) * 2004-07-20 2011-11-30 ルネサスエレクトロニクス株式会社 磁気記憶装置およびその製造方法
JP2008192634A (ja) * 2007-01-31 2008-08-21 Fujitsu Ltd トンネル磁気抵抗効果膜および磁気デバイス
CN111816671A (zh) * 2019-04-10 2020-10-23 长鑫存储技术有限公司 磁性随机存储器及其形成方法
CN111816674A (zh) * 2019-04-10 2020-10-23 长鑫存储技术有限公司 磁性随机存储器及其形成方法

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Publication number Publication date
JP2004140386A (ja) 2004-05-13

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