JP2004140386A5 - - Google Patents
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- Publication number
- JP2004140386A5 JP2004140386A5 JP2003389105A JP2003389105A JP2004140386A5 JP 2004140386 A5 JP2004140386 A5 JP 2004140386A5 JP 2003389105 A JP2003389105 A JP 2003389105A JP 2003389105 A JP2003389105 A JP 2003389105A JP 2004140386 A5 JP2004140386 A5 JP 2004140386A5
- Authority
- JP
- Japan
- Prior art keywords
- memory
- layers
- magnetic
- memory layers
- pair
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003389105A JP4329505B2 (ja) | 2001-06-19 | 2003-11-19 | 磁気メモリを用いた磁気メモリ装置 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001184480 | 2001-06-19 | ||
| JP2003389105A JP4329505B2 (ja) | 2001-06-19 | 2003-11-19 | 磁気メモリを用いた磁気メモリ装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002178745A Division JP3527230B2 (ja) | 2001-06-19 | 2002-06-19 | 磁気メモリの駆動方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004140386A JP2004140386A (ja) | 2004-05-13 |
| JP2004140386A5 true JP2004140386A5 (https=) | 2005-09-15 |
| JP4329505B2 JP4329505B2 (ja) | 2009-09-09 |
Family
ID=32472439
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003389105A Expired - Fee Related JP4329505B2 (ja) | 2001-06-19 | 2003-11-19 | 磁気メモリを用いた磁気メモリ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4329505B2 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7611912B2 (en) * | 2004-06-30 | 2009-11-03 | Headway Technologies, Inc. | Underlayer for high performance magnetic tunneling junction MRAM |
| JP4828807B2 (ja) * | 2004-07-20 | 2011-11-30 | ルネサスエレクトロニクス株式会社 | 磁気記憶装置およびその製造方法 |
| JP2008192634A (ja) * | 2007-01-31 | 2008-08-21 | Fujitsu Ltd | トンネル磁気抵抗効果膜および磁気デバイス |
| CN111816671A (zh) * | 2019-04-10 | 2020-10-23 | 长鑫存储技术有限公司 | 磁性随机存储器及其形成方法 |
| CN111816674A (zh) * | 2019-04-10 | 2020-10-23 | 长鑫存储技术有限公司 | 磁性随机存储器及其形成方法 |
-
2003
- 2003-11-19 JP JP2003389105A patent/JP4329505B2/ja not_active Expired - Fee Related
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