JP2002246567A5 - - Google Patents

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Publication number
JP2002246567A5
JP2002246567A5 JP2001037140A JP2001037140A JP2002246567A5 JP 2002246567 A5 JP2002246567 A5 JP 2002246567A5 JP 2001037140 A JP2001037140 A JP 2001037140A JP 2001037140 A JP2001037140 A JP 2001037140A JP 2002246567 A5 JP2002246567 A5 JP 2002246567A5
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JP
Japan
Prior art keywords
tmr
layers
data
magnetic
layer
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Pending
Application number
JP2001037140A
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English (en)
Japanese (ja)
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JP2002246567A (ja
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Priority to JP2001037140A priority Critical patent/JP2002246567A/ja
Priority claimed from JP2001037140A external-priority patent/JP2002246567A/ja
Priority to US10/073,339 priority patent/US7042753B2/en
Publication of JP2002246567A publication Critical patent/JP2002246567A/ja
Publication of JP2002246567A5 publication Critical patent/JP2002246567A5/ja
Pending legal-status Critical Current

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JP2001037140A 2001-02-14 2001-02-14 磁気ランダムアクセスメモリ Pending JP2002246567A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2001037140A JP2002246567A (ja) 2001-02-14 2001-02-14 磁気ランダムアクセスメモリ
US10/073,339 US7042753B2 (en) 2001-02-14 2002-02-13 Multi-value magnetic random access memory with stacked tunnel magnetoresistance (TMR) elements

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001037140A JP2002246567A (ja) 2001-02-14 2001-02-14 磁気ランダムアクセスメモリ

Publications (2)

Publication Number Publication Date
JP2002246567A JP2002246567A (ja) 2002-08-30
JP2002246567A5 true JP2002246567A5 (https=) 2005-08-25

Family

ID=18900315

Family Applications (1)

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JP2001037140A Pending JP2002246567A (ja) 2001-02-14 2001-02-14 磁気ランダムアクセスメモリ

Country Status (2)

Country Link
US (1) US7042753B2 (https=)
JP (1) JP2002246567A (https=)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002299575A (ja) * 2001-03-29 2002-10-11 Toshiba Corp 半導体記憶装置
CN1270323C (zh) * 2001-06-19 2006-08-16 松下电器产业株式会社 磁性存储器的驱动方法
US6593608B1 (en) * 2002-03-15 2003-07-15 Hewlett-Packard Development Company, L.P. Magneto resistive storage device having double tunnel junction
JP3884312B2 (ja) * 2002-03-28 2007-02-21 株式会社東芝 磁気記憶装置
KR100448853B1 (ko) * 2002-05-20 2004-09-18 주식회사 하이닉스반도체 마그네틱 램
KR100829556B1 (ko) * 2002-05-29 2008-05-14 삼성전자주식회사 자기 저항 램 및 그의 제조방법
US6667901B1 (en) * 2003-04-29 2003-12-23 Hewlett-Packard Development Company, L.P. Dual-junction magnetic memory device and read method
US6784091B1 (en) * 2003-06-05 2004-08-31 International Business Machines Corporation Maskless array protection process flow for forming interconnect vias in magnetic random access memory devices
US6956764B2 (en) * 2003-08-25 2005-10-18 Freescale Semiconductor, Inc. Method of writing to a multi-state magnetic random access memory cell
TWI226636B (en) * 2003-12-19 2005-01-11 Ind Tech Res Inst Magnetic random access memory with high selectivity and low power and production method thereof
KR100527536B1 (ko) * 2003-12-24 2005-11-09 주식회사 하이닉스반도체 마그네틱 램
KR100634501B1 (ko) * 2004-01-29 2006-10-13 삼성전자주식회사 자기 메모리 소자 및 그 제조방법
US6955926B2 (en) * 2004-02-25 2005-10-18 International Business Machines Corporation Method of fabricating data tracks for use in a magnetic shift register memory device
JP4082711B2 (ja) 2004-03-12 2008-04-30 独立行政法人科学技術振興機構 磁気抵抗素子及びその製造方法
JP4581133B2 (ja) * 2004-03-12 2010-11-17 独立行政法人科学技術振興機構 磁気抵抗素子
JP2005260175A (ja) * 2004-03-15 2005-09-22 Sony Corp 磁気メモリ及びその記録方法
US20070258170A1 (en) * 2004-08-27 2007-11-08 Shinji Yuasa Magnetic Tunnel Junction Device and Method of Manufacturing the Same
JP4372046B2 (ja) * 2005-05-18 2009-11-25 株式会社東芝 半導体装置
JP2007115956A (ja) * 2005-10-21 2007-05-10 Toshiba Corp 半導体記憶装置
US7502249B1 (en) * 2006-07-17 2009-03-10 Grandis, Inc. Method and system for using a pulsed field to assist spin transfer induced switching of magnetic memory elements
JP2008091703A (ja) * 2006-10-03 2008-04-17 Toshiba Corp 半導体記憶装置
US20080277778A1 (en) * 2007-05-10 2008-11-13 Furman Bruce K Layer Transfer Process and Functionally Enhanced Integrated Circuits Products Thereby
FR2925747B1 (fr) * 2007-12-21 2010-04-09 Commissariat Energie Atomique Memoire magnetique a ecriture assistee thermiquement
US7804710B2 (en) * 2008-03-31 2010-09-28 International Business Machines Corporation Multi-layer magnetic random access memory using spin-torque magnetic tunnel junctions and method for write state of the multi-layer magnetic random access memory
US8411497B2 (en) 2010-05-05 2013-04-02 Grandis, Inc. Method and system for providing a magnetic field aligned spin transfer torque random access memory
US8468022B2 (en) * 2011-09-30 2013-06-18 Google Inc. Voice control for asynchronous notifications
WO2015042033A1 (en) * 2013-09-19 2015-03-26 University Of Pittsburgh-Of The Commonwealth System Of Higher Education Magnetic-assisted nondestructive self-reference sensing method for spin-transfer torque random access memory
US12402327B2 (en) * 2022-01-13 2025-08-26 Taiwan Semiconductor Manufaturing Company, Ltd. Memory devices and methods of forming the same
JP2024017480A (ja) * 2022-07-28 2024-02-08 ソニーセミコンダクタソリューションズ株式会社 記憶装置、電子機器及び記憶装置の制御方法

Family Cites Families (18)

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Publication number Priority date Publication date Assignee Title
JP3585629B2 (ja) 1996-03-26 2004-11-04 株式会社東芝 磁気抵抗効果素子及び磁気情報読み出し方法
US5835314A (en) 1996-04-17 1998-11-10 Massachusetts Institute Of Technology Tunnel junction device for storage and switching of signals
US5894447A (en) 1996-09-26 1999-04-13 Kabushiki Kaisha Toshiba Semiconductor memory device including a particular memory cell block structure
US5930164A (en) 1998-02-26 1999-07-27 Motorola, Inc. Magnetic memory unit having four states and operating method thereof
US6169688B1 (en) 1998-03-23 2001-01-02 Kabushiki Kaisha Toshiba Magnetic storage device using unipole currents for selecting memory cells
JP4125465B2 (ja) 1999-03-15 2008-07-30 株式会社東芝 磁気メモリ装置
JP2001217398A (ja) 2000-02-03 2001-08-10 Rohm Co Ltd 強磁性トンネル接合素子を用いた記憶装置
DE10020128A1 (de) * 2000-04-14 2001-10-18 Infineon Technologies Ag MRAM-Speicher
JP4477199B2 (ja) 2000-06-16 2010-06-09 株式会社ルネサステクノロジ 磁気ランダムアクセスメモリ、磁気ランダムアクセスメモリへのアクセス方法および磁気ランダムアクセスメモリの製造方法
JP4149647B2 (ja) * 2000-09-28 2008-09-10 株式会社東芝 半導体記憶装置及びその製造方法
JP3920565B2 (ja) * 2000-12-26 2007-05-30 株式会社東芝 磁気ランダムアクセスメモリ
JP2002299575A (ja) * 2001-03-29 2002-10-11 Toshiba Corp 半導体記憶装置
JP2003151262A (ja) * 2001-11-15 2003-05-23 Toshiba Corp 磁気ランダムアクセスメモリ
US6944048B2 (en) * 2001-11-29 2005-09-13 Kabushiki Kaisha Toshiba Magnetic random access memory
DE60227907D1 (de) * 2001-12-21 2008-09-11 Toshiba Kk Magnetischer Direktzugriffsspeicher
DE60205569T2 (de) * 2001-12-21 2006-05-18 Kabushiki Kaisha Toshiba MRAM mit gestapelten Speicherzellen
US6795334B2 (en) * 2001-12-21 2004-09-21 Kabushiki Kaisha Toshiba Magnetic random access memory
US6839269B2 (en) * 2001-12-28 2005-01-04 Kabushiki Kaisha Toshiba Magnetic random access memory

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