JP2002246567A - 磁気ランダムアクセスメモリ - Google Patents

磁気ランダムアクセスメモリ

Info

Publication number
JP2002246567A
JP2002246567A JP2001037140A JP2001037140A JP2002246567A JP 2002246567 A JP2002246567 A JP 2002246567A JP 2001037140 A JP2001037140 A JP 2001037140A JP 2001037140 A JP2001037140 A JP 2001037140A JP 2002246567 A JP2002246567 A JP 2002246567A
Authority
JP
Japan
Prior art keywords
tmr
random access
access memory
tmr element
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001037140A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002246567A5 (https=
Inventor
Fumio Horiguchi
文男 堀口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2001037140A priority Critical patent/JP2002246567A/ja
Priority to US10/073,339 priority patent/US7042753B2/en
Publication of JP2002246567A publication Critical patent/JP2002246567A/ja
Publication of JP2002246567A5 publication Critical patent/JP2002246567A5/ja
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
JP2001037140A 2001-02-14 2001-02-14 磁気ランダムアクセスメモリ Pending JP2002246567A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2001037140A JP2002246567A (ja) 2001-02-14 2001-02-14 磁気ランダムアクセスメモリ
US10/073,339 US7042753B2 (en) 2001-02-14 2002-02-13 Multi-value magnetic random access memory with stacked tunnel magnetoresistance (TMR) elements

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001037140A JP2002246567A (ja) 2001-02-14 2001-02-14 磁気ランダムアクセスメモリ

Publications (2)

Publication Number Publication Date
JP2002246567A true JP2002246567A (ja) 2002-08-30
JP2002246567A5 JP2002246567A5 (https=) 2005-08-25

Family

ID=18900315

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001037140A Pending JP2002246567A (ja) 2001-02-14 2001-02-14 磁気ランダムアクセスメモリ

Country Status (2)

Country Link
US (1) US7042753B2 (https=)
JP (1) JP2002246567A (https=)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002103798A1 (en) * 2001-06-19 2002-12-27 Matsushita Electric Industrial Co., Ltd. Magnetic memory and its drive method, and magnetic memory apparatus comprising it
KR100448853B1 (ko) * 2002-05-20 2004-09-18 주식회사 하이닉스반도체 마그네틱 램
JP2005191523A (ja) * 2003-12-24 2005-07-14 Hynix Semiconductor Inc マグネチックラム
JP2005217413A (ja) * 2004-01-29 2005-08-11 Samsung Electronics Co Ltd 磁気メモリ素子およびその製造方法ならびに反応チャンバ
JP2005260175A (ja) * 2004-03-15 2005-09-22 Sony Corp 磁気メモリ及びその記録方法
JP2008004956A (ja) * 2004-03-12 2008-01-10 Japan Science & Technology Agency 磁気抵抗素子及びその製造方法
JPWO2006022183A1 (ja) * 2004-08-27 2008-05-08 独立行政法人科学技術振興機構 磁気抵抗素子及びその製造方法
US7884403B2 (en) 2004-03-12 2011-02-08 Japan Science And Technology Agency Magnetic tunnel junction device and memory device including the same
JP2015015490A (ja) * 2007-12-21 2015-01-22 コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ 熱アシスト磁気書き込みメモリ
WO2024024497A1 (ja) * 2022-07-28 2024-02-01 ソニーセミコンダクタソリューションズ株式会社 記憶装置、電子機器及び記憶装置の制御方法

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002299575A (ja) * 2001-03-29 2002-10-11 Toshiba Corp 半導体記憶装置
US6593608B1 (en) * 2002-03-15 2003-07-15 Hewlett-Packard Development Company, L.P. Magneto resistive storage device having double tunnel junction
JP3884312B2 (ja) * 2002-03-28 2007-02-21 株式会社東芝 磁気記憶装置
KR100829556B1 (ko) * 2002-05-29 2008-05-14 삼성전자주식회사 자기 저항 램 및 그의 제조방법
US6667901B1 (en) * 2003-04-29 2003-12-23 Hewlett-Packard Development Company, L.P. Dual-junction magnetic memory device and read method
US6784091B1 (en) * 2003-06-05 2004-08-31 International Business Machines Corporation Maskless array protection process flow for forming interconnect vias in magnetic random access memory devices
US6956764B2 (en) * 2003-08-25 2005-10-18 Freescale Semiconductor, Inc. Method of writing to a multi-state magnetic random access memory cell
TWI226636B (en) * 2003-12-19 2005-01-11 Ind Tech Res Inst Magnetic random access memory with high selectivity and low power and production method thereof
US6955926B2 (en) * 2004-02-25 2005-10-18 International Business Machines Corporation Method of fabricating data tracks for use in a magnetic shift register memory device
JP4372046B2 (ja) * 2005-05-18 2009-11-25 株式会社東芝 半導体装置
JP2007115956A (ja) * 2005-10-21 2007-05-10 Toshiba Corp 半導体記憶装置
US7502249B1 (en) * 2006-07-17 2009-03-10 Grandis, Inc. Method and system for using a pulsed field to assist spin transfer induced switching of magnetic memory elements
JP2008091703A (ja) * 2006-10-03 2008-04-17 Toshiba Corp 半導体記憶装置
US20080277778A1 (en) * 2007-05-10 2008-11-13 Furman Bruce K Layer Transfer Process and Functionally Enhanced Integrated Circuits Products Thereby
US7804710B2 (en) * 2008-03-31 2010-09-28 International Business Machines Corporation Multi-layer magnetic random access memory using spin-torque magnetic tunnel junctions and method for write state of the multi-layer magnetic random access memory
US8411497B2 (en) 2010-05-05 2013-04-02 Grandis, Inc. Method and system for providing a magnetic field aligned spin transfer torque random access memory
US8468022B2 (en) * 2011-09-30 2013-06-18 Google Inc. Voice control for asynchronous notifications
US9627024B2 (en) 2013-09-19 2017-04-18 University of Pittsburgh—of the Commonwealth System of Higher Education Magnetic-assisted nondestructive self-reference sensing method for spin-transfer torque random access memory
US12402327B2 (en) * 2022-01-13 2025-08-26 Taiwan Semiconductor Manufaturing Company, Ltd. Memory devices and methods of forming the same

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3585629B2 (ja) 1996-03-26 2004-11-04 株式会社東芝 磁気抵抗効果素子及び磁気情報読み出し方法
US5835314A (en) * 1996-04-17 1998-11-10 Massachusetts Institute Of Technology Tunnel junction device for storage and switching of signals
US5894447A (en) * 1996-09-26 1999-04-13 Kabushiki Kaisha Toshiba Semiconductor memory device including a particular memory cell block structure
US5930164A (en) * 1998-02-26 1999-07-27 Motorola, Inc. Magnetic memory unit having four states and operating method thereof
US6169688B1 (en) * 1998-03-23 2001-01-02 Kabushiki Kaisha Toshiba Magnetic storage device using unipole currents for selecting memory cells
JP4125465B2 (ja) 1999-03-15 2008-07-30 株式会社東芝 磁気メモリ装置
JP2001217398A (ja) 2000-02-03 2001-08-10 Rohm Co Ltd 強磁性トンネル接合素子を用いた記憶装置
DE10020128A1 (de) * 2000-04-14 2001-10-18 Infineon Technologies Ag MRAM-Speicher
JP4477199B2 (ja) * 2000-06-16 2010-06-09 株式会社ルネサステクノロジ 磁気ランダムアクセスメモリ、磁気ランダムアクセスメモリへのアクセス方法および磁気ランダムアクセスメモリの製造方法
JP4149647B2 (ja) * 2000-09-28 2008-09-10 株式会社東芝 半導体記憶装置及びその製造方法
JP3920565B2 (ja) * 2000-12-26 2007-05-30 株式会社東芝 磁気ランダムアクセスメモリ
JP2002299575A (ja) * 2001-03-29 2002-10-11 Toshiba Corp 半導体記憶装置
JP2003151262A (ja) * 2001-11-15 2003-05-23 Toshiba Corp 磁気ランダムアクセスメモリ
US6944048B2 (en) * 2001-11-29 2005-09-13 Kabushiki Kaisha Toshiba Magnetic random access memory
DE60227907D1 (de) * 2001-12-21 2008-09-11 Toshiba Kk Magnetischer Direktzugriffsspeicher
US6795334B2 (en) * 2001-12-21 2004-09-21 Kabushiki Kaisha Toshiba Magnetic random access memory
EP1321941B1 (en) * 2001-12-21 2005-08-17 Kabushiki Kaisha Toshiba Magnetic random access memory with stacked memory cells
US6839269B2 (en) * 2001-12-28 2005-01-04 Kabushiki Kaisha Toshiba Magnetic random access memory

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002103798A1 (en) * 2001-06-19 2002-12-27 Matsushita Electric Industrial Co., Ltd. Magnetic memory and its drive method, and magnetic memory apparatus comprising it
KR100448853B1 (ko) * 2002-05-20 2004-09-18 주식회사 하이닉스반도체 마그네틱 램
JP2005191523A (ja) * 2003-12-24 2005-07-14 Hynix Semiconductor Inc マグネチックラム
JP2005217413A (ja) * 2004-01-29 2005-08-11 Samsung Electronics Co Ltd 磁気メモリ素子およびその製造方法ならびに反応チャンバ
US9608198B2 (en) 2004-03-12 2017-03-28 Japan Science And Technology Agency Magnetic tunnel junction device
US9123463B2 (en) 2004-03-12 2015-09-01 Japan Science And Technology Agency Magnetic tunnel junction device
US11968909B2 (en) 2004-03-12 2024-04-23 Godo Kaisha Ip Bridge 1 Method of manufacturing a magnetoresistive random access memory (MRAM)
US7884403B2 (en) 2004-03-12 2011-02-08 Japan Science And Technology Agency Magnetic tunnel junction device and memory device including the same
US8319263B2 (en) 2004-03-12 2012-11-27 Japan Science And Technology Agency Magnetic tunnel junction device
US8405134B2 (en) 2004-03-12 2013-03-26 Japan Science And Technology Agency Magnetic tunnel junction device
US11737372B2 (en) 2004-03-12 2023-08-22 Godo Kaisha Ip Bridge 1 Method of manufacturing a magnetoresistive random access memory (MRAM)
JP2008004956A (ja) * 2004-03-12 2008-01-10 Japan Science & Technology Agency 磁気抵抗素子及びその製造方法
US11233193B2 (en) 2004-03-12 2022-01-25 Japan Science And Technology Agency Method of manufacturing a magnetorestive random access memeory (MRAM)
US10367138B2 (en) 2004-03-12 2019-07-30 Japan Science And Technology Agency Magnetic tunnel junction device
US10680167B2 (en) 2004-03-12 2020-06-09 Japan Science And Technology Agency Magnetic tunnel junction device
JP2005260175A (ja) * 2004-03-15 2005-09-22 Sony Corp 磁気メモリ及びその記録方法
JPWO2006022183A1 (ja) * 2004-08-27 2008-05-08 独立行政法人科学技術振興機構 磁気抵抗素子及びその製造方法
JP2015015490A (ja) * 2007-12-21 2015-01-22 コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ 熱アシスト磁気書き込みメモリ
WO2024024497A1 (ja) * 2022-07-28 2024-02-01 ソニーセミコンダクタソリューションズ株式会社 記憶装置、電子機器及び記憶装置の制御方法

Also Published As

Publication number Publication date
US7042753B2 (en) 2006-05-09
US20020149962A1 (en) 2002-10-17

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