JP4323903B2 - 照明光学系及びそれを用いた露光装置 - Google Patents
照明光学系及びそれを用いた露光装置 Download PDFInfo
- Publication number
- JP4323903B2 JP4323903B2 JP2003321419A JP2003321419A JP4323903B2 JP 4323903 B2 JP4323903 B2 JP 4323903B2 JP 2003321419 A JP2003321419 A JP 2003321419A JP 2003321419 A JP2003321419 A JP 2003321419A JP 4323903 B2 JP4323903 B2 JP 4323903B2
- Authority
- JP
- Japan
- Prior art keywords
- optical system
- light
- polarization
- light source
- illumination
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0938—Using specific optical elements
- G02B27/095—Refractive optical elements
- G02B27/0955—Lenses
- G02B27/0961—Lens arrays
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0905—Dividing and/or superposing multiple light beams
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0927—Systems for changing the beam intensity distribution, e.g. Gaussian to top-hat
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/32—Holograms used as optical elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/70108—Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70158—Diffractive optical elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70566—Polarisation control
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003321419A JP4323903B2 (ja) | 2003-09-12 | 2003-09-12 | 照明光学系及びそれを用いた露光装置 |
| EP04773236A EP1668679A4 (en) | 2003-09-12 | 2004-09-10 | OPTICAL LIGHTING SYSTEM AND EXPOSURE DEVICE THEREFOR |
| TW093127499A TWI274375B (en) | 2003-09-12 | 2004-09-10 | Illumination optical system and exposure apparatus using the same |
| KR1020067004912A KR100731255B1 (ko) | 2003-09-12 | 2004-09-10 | 조명광학계 및 그것을 사용한 노광장치 |
| US10/538,230 US7196773B2 (en) | 2003-09-12 | 2004-09-10 | Illumination optical system and exposure apparatus using the same |
| PCT/JP2004/013592 WO2005027207A1 (en) | 2003-09-12 | 2004-09-10 | Illumination optical system and exposure apparatus using the same |
| US11/676,891 US20070146677A1 (en) | 2003-09-12 | 2007-02-20 | Illumination optical system and exposure apparatus using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003321419A JP4323903B2 (ja) | 2003-09-12 | 2003-09-12 | 照明光学系及びそれを用いた露光装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005093522A JP2005093522A (ja) | 2005-04-07 |
| JP2005093522A5 JP2005093522A5 (enExample) | 2006-10-19 |
| JP4323903B2 true JP4323903B2 (ja) | 2009-09-02 |
Family
ID=34308635
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003321419A Expired - Fee Related JP4323903B2 (ja) | 2003-09-12 | 2003-09-12 | 照明光学系及びそれを用いた露光装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US7196773B2 (enExample) |
| EP (1) | EP1668679A4 (enExample) |
| JP (1) | JP4323903B2 (enExample) |
| KR (1) | KR100731255B1 (enExample) |
| TW (1) | TWI274375B (enExample) |
| WO (1) | WO2005027207A1 (enExample) |
Families Citing this family (46)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3226073A3 (en) | 2003-04-09 | 2017-10-11 | Nikon Corporation | Exposure method and apparatus, and method for fabricating device |
| JP4323903B2 (ja) * | 2003-09-12 | 2009-09-02 | キヤノン株式会社 | 照明光学系及びそれを用いた露光装置 |
| TWI511179B (zh) | 2003-10-28 | 2015-12-01 | 尼康股份有限公司 | 照明光學裝置、曝光裝置、曝光方法以及元件製造方法 |
| TWI512335B (zh) * | 2003-11-20 | 2015-12-11 | 尼康股份有限公司 | 光束變換元件、光學照明裝置、曝光裝置、以及曝光方法 |
| EP1716457B9 (en) | 2004-01-16 | 2012-04-04 | Carl Zeiss SMT GmbH | Projection system with a polarization-modulating element having a variable thickness profile |
| US20070019179A1 (en) | 2004-01-16 | 2007-01-25 | Damian Fiolka | Polarization-modulating optical element |
| TWI395068B (zh) | 2004-01-27 | 2013-05-01 | 尼康股份有限公司 | 光學系統、曝光裝置以及曝光方法 |
| TWI511182B (zh) | 2004-02-06 | 2015-12-01 | 尼康股份有限公司 | 光學照明裝置、曝光裝置、曝光方法以及元件製造方法 |
| JP4497968B2 (ja) | 2004-03-18 | 2010-07-07 | キヤノン株式会社 | 照明装置、露光装置及びデバイス製造方法 |
| JP2006005319A (ja) | 2004-06-21 | 2006-01-05 | Canon Inc | 照明光学系及び方法、露光装置及びデバイス製造方法 |
| JP2006179516A (ja) | 2004-12-20 | 2006-07-06 | Toshiba Corp | 露光装置、露光方法及び半導体装置の製造方法 |
| TWI423301B (zh) * | 2005-01-21 | 2014-01-11 | 尼康股份有限公司 | 照明光學裝置、曝光裝置、曝光方法以及元件製造方法 |
| US20120258407A1 (en) * | 2005-04-12 | 2012-10-11 | Sirat Gabriel Y | Multifield incoherent Lithography, Nomarski Lithography and multifield incoherent Imaging |
| US7924406B2 (en) * | 2005-07-13 | 2011-04-12 | Asml Netherlands B.V. | Stage apparatus, lithographic apparatus and device manufacturing method having switch device for two illumination channels |
| JPWO2007072639A1 (ja) | 2005-12-21 | 2009-05-28 | 株式会社ニコン | オプティカルインテグレータ、照明光学装置、露光装置、およびデバイスの製造方法 |
| JP2007220767A (ja) * | 2006-02-15 | 2007-08-30 | Canon Inc | 露光装置及びデバイス製造方法 |
| US7525642B2 (en) | 2006-02-23 | 2009-04-28 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7657147B2 (en) * | 2006-03-02 | 2010-02-02 | Solar Light Company, Inc. | Sunlight simulator apparatus |
| JP4957058B2 (ja) * | 2006-04-12 | 2012-06-20 | 大日本印刷株式会社 | 回折光学素子、および該素子を備えた露光装置 |
| JP4784746B2 (ja) * | 2006-04-12 | 2011-10-05 | 株式会社ニコン | 照明光学装置、投影露光装置、投影光学系、及びデバイス製造方法 |
| CN101379593A (zh) * | 2006-04-14 | 2009-03-04 | 株式会社尼康 | 曝光装置、元件制造方法以及曝光方法 |
| EP2009678A4 (en) * | 2006-04-17 | 2011-04-06 | Nikon Corp | OPTICAL LIGHTING DEVICE, EXPOSURE DEVICE AND COMPONENT MANUFACTURING METHOD |
| JPWO2008007632A1 (ja) * | 2006-07-12 | 2009-12-10 | 株式会社ニコン | 照明光学装置、露光装置、およびデバイス製造方法 |
| DE102006032810A1 (de) | 2006-07-14 | 2008-01-17 | Carl Zeiss Smt Ag | Beleuchtungsoptik für eine Mikrolithografie-Projektionsbelichtungsanlage, Beleuchtungssystem mit einer derartigen Beleuchtungsoptik, mikrolithografie-Projektionsbelichtungsanlage mit einem derartigen Beleuchtungssystem, mikrolithografisches Herstellungsverfahren für Bauelemente sowie mit diesem Verfahren hergestelltes Bauelement |
| JP5308638B2 (ja) * | 2006-07-14 | 2013-10-09 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィ投影露光装置用の照明光学系 |
| JP5023589B2 (ja) | 2006-07-21 | 2012-09-12 | 大日本印刷株式会社 | フォトマスクおよび該フォトマスクの設計方法 |
| JP2008047673A (ja) * | 2006-08-14 | 2008-02-28 | Canon Inc | 露光装置及びデバイス製造方法 |
| DE102006038643B4 (de) | 2006-08-17 | 2009-06-10 | Carl Zeiss Smt Ag | Mikrolithographische Projektionsbelichtungsanlage sowie mikrolithographisches Belichtungsverfahren |
| US7952685B2 (en) * | 2007-03-15 | 2011-05-31 | Carl Zeiss Smt Ag | Illuminator for a lithographic apparatus and method |
| US20080285000A1 (en) * | 2007-05-17 | 2008-11-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4971932B2 (ja) * | 2007-10-01 | 2012-07-11 | キヤノン株式会社 | 照明光学系、露光装置、デバイス製造方法および偏光制御ユニット |
| JP5459482B2 (ja) * | 2007-10-16 | 2014-04-02 | 株式会社ニコン | 送光光学系、照明光学系、露光装置、およびデバイス製造方法 |
| US20090180088A1 (en) * | 2008-01-11 | 2009-07-16 | Uwe Paul Schroeder | Illumination Sources for Lithography Systems |
| DE102008009601A1 (de) * | 2008-02-15 | 2009-08-20 | Carl Zeiss Smt Ag | Optisches System für eine mikrolithographische Projektionsbelichtungsanlage sowie mikrolithographisches Belichtungsverfahren |
| WO2009128293A1 (ja) * | 2008-04-14 | 2009-10-22 | 株式会社ニコン | 空間光変調ユニット、照明光学系、露光装置、およびデバイス製造方法 |
| WO2009150913A1 (ja) * | 2008-06-12 | 2009-12-17 | 株式会社ニコン | 照明装置、露光装置及びデバイス製造方法 |
| JP5167032B2 (ja) * | 2008-08-27 | 2013-03-21 | キヤノン株式会社 | 計算機ホログラム、露光装置及びデバイスの製造方法 |
| US20110037962A1 (en) * | 2009-08-17 | 2011-02-17 | Nikon Corporation | Polarization converting unit, illumination optical system, exposure apparatus, and device manufacturing method |
| US20110205519A1 (en) * | 2010-02-25 | 2011-08-25 | Nikon Corporation | Polarization converting unit, illumination optical system, exposure apparatus, and device manufacturing method |
| KR102250735B1 (ko) * | 2012-02-29 | 2021-05-12 | 코닝 인코포레이티드 | 낮은 cte, 이온-교환가능한 유리 조성물 및 이를 포함하는 유리 제품 |
| WO2014143298A1 (en) | 2013-03-12 | 2014-09-18 | Applied Materials, Inc. | Customized pupil stop shape for control of edge profile in laser annealing systems |
| CN103744183B (zh) * | 2014-01-24 | 2016-01-20 | 哈尔滨工业大学 | 一种红外宽波段多干扰复合光学系统 |
| US10143340B2 (en) * | 2015-06-17 | 2018-12-04 | Essity Hygiene And Health Aktiebolag | Dispenser assembly and related methods |
| JP6567005B2 (ja) * | 2017-08-31 | 2019-08-28 | キヤノン株式会社 | 露光装置、調整方法、および、物品製造方法 |
| TW202303301A (zh) * | 2021-05-10 | 2023-01-16 | 美商應用材料股份有限公司 | 用於灰階微影術的方法以及設備 |
| WO2024245977A1 (en) * | 2023-05-26 | 2024-12-05 | Powerphotonic Ltd | Improvements in or relating to laser beam shapers |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5328785A (en) * | 1992-02-10 | 1994-07-12 | Litel Instruments | High power phase masks for imaging systems |
| JPH06204121A (ja) | 1992-12-28 | 1994-07-22 | Canon Inc | 照明装置及びそれを用いた投影露光装置 |
| JPH07135145A (ja) | 1993-06-29 | 1995-05-23 | Canon Inc | 露光装置 |
| JP2836483B2 (ja) | 1994-05-13 | 1998-12-14 | 日本電気株式会社 | 照明光学装置 |
| US5559583A (en) | 1994-02-24 | 1996-09-24 | Nec Corporation | Exposure system and illuminating apparatus used therein and method for exposing a resist film on a wafer |
| US5695274A (en) * | 1994-03-23 | 1997-12-09 | Olympus Optical Co., Ltd. | Illuminating optical system for use in projecting exposure device |
| JP3392034B2 (ja) | 1997-12-10 | 2003-03-31 | キヤノン株式会社 | 照明装置及びそれを用いた投影露光装置 |
| JP2000021748A (ja) * | 1998-06-30 | 2000-01-21 | Canon Inc | 露光方法および露光装置 |
| EP1091252A3 (en) * | 1999-09-29 | 2004-08-11 | ASML Netherlands B.V. | Lithographic method and apparatus |
| JP3919419B2 (ja) | 2000-03-30 | 2007-05-23 | キヤノン株式会社 | 照明装置及びそれを有する露光装置 |
| TW567406B (en) * | 2001-12-12 | 2003-12-21 | Nikon Corp | Diffraction optical device, refraction optical device, illuminating optical device, exposure system and exposure method |
| EP1367446A1 (en) * | 2002-05-31 | 2003-12-03 | ASML Netherlands B.V. | Lithographic apparatus |
| JP4323903B2 (ja) * | 2003-09-12 | 2009-09-02 | キヤノン株式会社 | 照明光学系及びそれを用いた露光装置 |
| EP1621930A3 (en) * | 2004-07-29 | 2011-07-06 | Carl Zeiss SMT GmbH | Illumination system for a microlithographic projection exposure apparatus |
-
2003
- 2003-09-12 JP JP2003321419A patent/JP4323903B2/ja not_active Expired - Fee Related
-
2004
- 2004-09-10 TW TW093127499A patent/TWI274375B/zh not_active IP Right Cessation
- 2004-09-10 US US10/538,230 patent/US7196773B2/en not_active Expired - Fee Related
- 2004-09-10 EP EP04773236A patent/EP1668679A4/en not_active Withdrawn
- 2004-09-10 KR KR1020067004912A patent/KR100731255B1/ko not_active Expired - Fee Related
- 2004-09-10 WO PCT/JP2004/013592 patent/WO2005027207A1/en not_active Ceased
-
2007
- 2007-02-20 US US11/676,891 patent/US20070146677A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| TWI274375B (en) | 2007-02-21 |
| KR100731255B1 (ko) | 2007-06-25 |
| US7196773B2 (en) | 2007-03-27 |
| EP1668679A1 (en) | 2006-06-14 |
| US20070146677A1 (en) | 2007-06-28 |
| KR20060087551A (ko) | 2006-08-02 |
| TW200511392A (en) | 2005-03-16 |
| WO2005027207A1 (en) | 2005-03-24 |
| US20060012769A1 (en) | 2006-01-19 |
| EP1668679A4 (en) | 2008-04-30 |
| JP2005093522A (ja) | 2005-04-07 |
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