JP4305982B2 - 半導体発光素子の製造方法 - Google Patents

半導体発光素子の製造方法 Download PDF

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Publication number
JP4305982B2
JP4305982B2 JP33635598A JP33635598A JP4305982B2 JP 4305982 B2 JP4305982 B2 JP 4305982B2 JP 33635598 A JP33635598 A JP 33635598A JP 33635598 A JP33635598 A JP 33635598A JP 4305982 B2 JP4305982 B2 JP 4305982B2
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type
iii
compound semiconductor
gan
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JP2000164512A (ja
JP2000164512A5 (enExample
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浩之 奥山
中村　　文彦
中島　　博
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Sony Corp
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Sony Corp
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JP33635598A 1998-11-26 1998-11-26 半導体発光素子の製造方法 Expired - Fee Related JP4305982B2 (ja)

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JP33635598A JP4305982B2 (ja) 1998-11-26 1998-11-26 半導体発光素子の製造方法

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JP33635598A JP4305982B2 (ja) 1998-11-26 1998-11-26 半導体発光素子の製造方法

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JP2000164512A JP2000164512A (ja) 2000-06-16
JP2000164512A5 JP2000164512A5 (enExample) 2005-10-27
JP4305982B2 true JP4305982B2 (ja) 2009-07-29

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JP33635598A Expired - Fee Related JP4305982B2 (ja) 1998-11-26 1998-11-26 半導体発光素子の製造方法

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103824913A (zh) * 2014-03-12 2014-05-28 合肥彩虹蓝光科技有限公司 一种Mg掺杂P型GaN外延生长方法

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004009130A1 (de) * 2004-02-25 2005-09-15 Aixtron Ag Einlasssystem für einen MOCVD-Reaktor
KR100795547B1 (ko) 2006-06-30 2008-01-21 서울옵토디바이스주식회사 질화물 반도체 발광 소자
JPWO2008155958A1 (ja) * 2007-06-15 2010-08-26 ローム株式会社 半導体発光素子及び半導体発光素子の製造方法
JP5306792B2 (ja) * 2008-12-11 2013-10-02 大陽日酸株式会社 窒化ガリウム系化合物半導体の製造方法
JP5232338B2 (ja) * 2011-04-08 2013-07-10 パナソニック株式会社 窒化物系半導体素子およびその製造方法
JP5437533B2 (ja) * 2011-04-12 2014-03-12 パナソニック株式会社 窒化ガリウム系化合物半導体発光素子およびその製造方法
JP5668647B2 (ja) 2011-09-06 2015-02-12 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子およびその製造方法
CN103236476B (zh) * 2013-04-09 2016-04-20 湘能华磊光电股份有限公司 一种生长外延片及其制备方法
US9917228B2 (en) 2014-07-07 2018-03-13 Sony Corporation Semiconductor optical device
JP7169613B2 (ja) * 2017-11-10 2022-11-11 学校法人 名城大学 窒化物半導体発光素子の製造方法
CN114242572A (zh) * 2021-12-22 2022-03-25 江苏第三代半导体研究院有限公司 p型氮化物的制备方法、结构及半导体器件

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103824913A (zh) * 2014-03-12 2014-05-28 合肥彩虹蓝光科技有限公司 一种Mg掺杂P型GaN外延生长方法

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