JP2000164512A5 - - Google Patents
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- Publication number
- JP2000164512A5 JP2000164512A5 JP1998336355A JP33635598A JP2000164512A5 JP 2000164512 A5 JP2000164512 A5 JP 2000164512A5 JP 1998336355 A JP1998336355 A JP 1998336355A JP 33635598 A JP33635598 A JP 33635598A JP 2000164512 A5 JP2000164512 A5 JP 2000164512A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- compound semiconductor
- iii
- type
- type nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 claims 49
- 150000001875 compounds Chemical class 0.000 claims 35
- 150000004767 nitrides Chemical class 0.000 claims 35
- 238000000034 method Methods 0.000 claims 10
- 239000012535 impurity Substances 0.000 claims 9
- 238000004519 manufacturing process Methods 0.000 claims 9
- 239000007789 gas Substances 0.000 claims 8
- 238000005229 chemical vapour deposition Methods 0.000 claims 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 5
- 239000001301 oxygen Substances 0.000 claims 5
- 229910052760 oxygen Inorganic materials 0.000 claims 5
- 229910021478 group 5 element Inorganic materials 0.000 claims 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- 230000004913 activation Effects 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 238000001947 vapour-phase growth Methods 0.000 claims 2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33635598A JP4305982B2 (ja) | 1998-11-26 | 1998-11-26 | 半導体発光素子の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33635598A JP4305982B2 (ja) | 1998-11-26 | 1998-11-26 | 半導体発光素子の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000164512A JP2000164512A (ja) | 2000-06-16 |
| JP2000164512A5 true JP2000164512A5 (enExample) | 2005-10-27 |
| JP4305982B2 JP4305982B2 (ja) | 2009-07-29 |
Family
ID=18298280
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33635598A Expired - Fee Related JP4305982B2 (ja) | 1998-11-26 | 1998-11-26 | 半導体発光素子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4305982B2 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102004009130A1 (de) * | 2004-02-25 | 2005-09-15 | Aixtron Ag | Einlasssystem für einen MOCVD-Reaktor |
| KR100795547B1 (ko) | 2006-06-30 | 2008-01-21 | 서울옵토디바이스주식회사 | 질화물 반도체 발광 소자 |
| JPWO2008155958A1 (ja) * | 2007-06-15 | 2010-08-26 | ローム株式会社 | 半導体発光素子及び半導体発光素子の製造方法 |
| JP5306792B2 (ja) * | 2008-12-11 | 2013-10-02 | 大陽日酸株式会社 | 窒化ガリウム系化合物半導体の製造方法 |
| JP5232338B2 (ja) * | 2011-04-08 | 2013-07-10 | パナソニック株式会社 | 窒化物系半導体素子およびその製造方法 |
| JP5437533B2 (ja) * | 2011-04-12 | 2014-03-12 | パナソニック株式会社 | 窒化ガリウム系化合物半導体発光素子およびその製造方法 |
| JP5668647B2 (ja) | 2011-09-06 | 2015-02-12 | 豊田合成株式会社 | Ｉｉｉ族窒化物半導体発光素子およびその製造方法 |
| CN103236476B (zh) * | 2013-04-09 | 2016-04-20 | 湘能华磊光电股份有限公司 | 一种生长外延片及其制备方法 |
| CN103824913B (zh) * | 2014-03-12 | 2016-08-24 | 合肥彩虹蓝光科技有限公司 | 一种Mg掺杂P型GaN外延生长方法 |
| US9917228B2 (en) | 2014-07-07 | 2018-03-13 | Sony Corporation | Semiconductor optical device |
| JP7169613B2 (ja) * | 2017-11-10 | 2022-11-11 | 学校法人 名城大学 | 窒化物半導体発光素子の製造方法 |
| CN114242572A (zh) * | 2021-12-22 | 2022-03-25 | 江苏第三代半导体研究院有限公司 | p型氮化物的制备方法、结构及半导体器件 |
-
1998
- 1998-11-26 JP JP33635598A patent/JP4305982B2/ja not_active Expired - Fee Related
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