JP4304749B2 - 半導体装置用部材の製造方法 - Google Patents

半導体装置用部材の製造方法 Download PDF

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Publication number
JP4304749B2
JP4304749B2 JP02894099A JP2894099A JP4304749B2 JP 4304749 B2 JP4304749 B2 JP 4304749B2 JP 02894099 A JP02894099 A JP 02894099A JP 2894099 A JP2894099 A JP 2894099A JP 4304749 B2 JP4304749 B2 JP 4304749B2
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Japan
Prior art keywords
semiconductor device
sintered body
alloy
sintering
sic
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Expired - Lifetime
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JP02894099A
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English (en)
Japanese (ja)
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JPH11310843A5 (enExample
JPH11310843A (ja
Inventor
伸一 山形
治 諏訪多
千尋 河合
彰 福井
義信 武田
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP02894099A priority Critical patent/JP4304749B2/ja
Priority to EP99301332A priority patent/EP0938137A3/en
Priority to US09/256,783 priority patent/US6123895A/en
Publication of JPH11310843A publication Critical patent/JPH11310843A/ja
Priority to US09/498,338 priority patent/US6507105B1/en
Publication of JPH11310843A5 publication Critical patent/JPH11310843A5/ja
Application granted granted Critical
Publication of JP4304749B2 publication Critical patent/JP4304749B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/142—Metallic substrates having insulating layers
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C29/00—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
    • C22C29/02—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides
    • C22C29/06—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides based on carbides, but not containing other metal compounds
    • C22C29/065—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides based on carbides, but not containing other metal compounds based on SiC
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/0047—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents
    • C22C32/0052—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only carbides
    • C22C32/0063—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only carbides based on SiC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Ceramic Engineering (AREA)
  • Powder Metallurgy (AREA)
  • Manufacture Of Alloys Or Alloy Compounds (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Insulated Metal Substrates For Printed Circuits (AREA)
JP02894099A 1998-02-24 1999-02-05 半導体装置用部材の製造方法 Expired - Lifetime JP4304749B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP02894099A JP4304749B2 (ja) 1998-02-24 1999-02-05 半導体装置用部材の製造方法
EP99301332A EP0938137A3 (en) 1998-02-24 1999-02-24 Member for semiconductor device and method for producing the same
US09/256,783 US6123895A (en) 1998-02-24 1999-02-24 Aluminum base member for semiconductor device containing a nitrogen rich surface and method for producing the same
US09/498,338 US6507105B1 (en) 1998-02-24 2000-02-04 Member for semiconductor device and method for producing the same

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP10-41447 1998-02-24
JP4144798 1998-02-24
JP02894099A JP4304749B2 (ja) 1998-02-24 1999-02-05 半導体装置用部材の製造方法

Publications (3)

Publication Number Publication Date
JPH11310843A JPH11310843A (ja) 1999-11-09
JPH11310843A5 JPH11310843A5 (enExample) 2005-10-27
JP4304749B2 true JP4304749B2 (ja) 2009-07-29

Family

ID=26367094

Family Applications (1)

Application Number Title Priority Date Filing Date
JP02894099A Expired - Lifetime JP4304749B2 (ja) 1998-02-24 1999-02-05 半導体装置用部材の製造方法

Country Status (3)

Country Link
US (2) US6123895A (enExample)
EP (1) EP0938137A3 (enExample)
JP (1) JP4304749B2 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4080030B2 (ja) * 1996-06-14 2008-04-23 住友電気工業株式会社 半導体基板材料、半導体基板、半導体装置、及びその製造方法
EP1195810B1 (en) * 2000-03-15 2011-05-11 Sumitomo Electric Industries, Ltd. Method for producing an aluminum-silicon carbide semiconductor substrate the same
DE10066005C2 (de) * 2000-06-28 2003-04-10 Eisenmann Kg Maschbau Verfahren zum Sintern von aluminiumbasierten Sinterteilen
JP3598954B2 (ja) * 2000-08-21 2004-12-08 株式会社村田製作所 電圧非直線抵抗体の製造方法
JP4756200B2 (ja) * 2000-09-04 2011-08-24 Ｄｏｗａメタルテック株式会社 金属セラミックス回路基板
US6835889B2 (en) * 2001-09-21 2004-12-28 Kabushiki Kaisha Toshiba Passive element component and substrate with built-in passive element
JP4113971B2 (ja) * 2002-07-30 2008-07-09 株式会社豊田自動織機 低膨張材料及びその製造方法
US6875995B2 (en) * 2002-08-16 2005-04-05 Cree, Inc. Heterogeneous bandgap structures for semiconductor devices and manufacturing methods therefor
US7026399B2 (en) * 2002-09-27 2006-04-11 Taylor Made Golf Company, Inc. Golf ball incorporating a polymer network comprising silicone
JP3971296B2 (ja) * 2002-12-27 2007-09-05 Ｄｏｗａホールディングス株式会社 金属−セラミックス接合基板およびその製造方法
AU2003292484A1 (en) * 2003-01-13 2004-08-10 Koninklijke Philips Electronics N.V. Electronic device and method of manufacturing a substrate
JP4014528B2 (ja) * 2003-03-28 2007-11-28 日本碍子株式会社 ヒートスプレッダモジュールの製造方法及びヒートスプレッダモジュール
EP1518847B1 (en) * 2003-09-29 2013-08-28 Dowa Metaltech Co., Ltd. Aluminum/ceramic bonding substrate and method for producing same
JP4382547B2 (ja) * 2004-03-24 2009-12-16 株式会社アライドマテリアル 半導体装置用基板と半導体装置
KR20110124372A (ko) * 2004-04-05 2011-11-16 미쓰비시 마테리알 가부시키가이샤 Ａｌ／ＡｌＮ 접합체, 전력 모듈용 기판 및 전력 모듈, 그리고 Ａｌ／ＡｌＮ 접합체의 제조 방법
WO2006077755A1 (ja) 2005-01-20 2006-07-27 A.L.M.T.Corp. 半導体装置用部材とその製造方法
JP4378334B2 (ja) * 2005-09-09 2009-12-02 日本碍子株式会社 ヒートスプレッダモジュール及びその製造方法
JP5048266B2 (ja) 2006-04-27 2012-10-17 株式会社アライドマテリアル 放熱基板とその製造方法
DE102007054455B3 (de) * 2007-11-13 2009-04-09 Eads Deutschland Gmbh Verfahren zum Herstellen eines metallischen Verbunds
US8828804B2 (en) * 2008-04-30 2014-09-09 Infineon Technologies Ag Semiconductor device and method
US7754533B2 (en) * 2008-08-28 2010-07-13 Infineon Technologies Ag Method of manufacturing a semiconductor device
US8637379B2 (en) * 2009-10-08 2014-01-28 Infineon Technologies Ag Device including a semiconductor chip and a carrier and fabrication method
FR3006936B1 (fr) * 2013-06-12 2015-07-03 Ct Tech Des Ind Mecaniques Procede et ensemble de production d'une piece mecanique par frittage d'un materiau pulverulent
KR101749066B1 (ko) * 2014-12-15 2017-06-20 이건배 신개념을 이용한 알루미늄 기지 복합재료의 제조방법 및 이에 의하여 제조된 알루미늄 기지 복합재료
CN109702185B (zh) * 2019-01-23 2021-04-06 宁波合盛新材料有限公司 一种铝基复合材料锻压件及其制备方法

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US3178807A (en) * 1961-10-05 1965-04-20 Du Pont Cermet of aluminum with boron carbide or silicon carbide
US4786467A (en) * 1983-06-06 1988-11-22 Dural Aluminum Composites Corp. Process for preparation of composite materials containing nonmetallic particles in a metallic matrix, and composite materials made thereby
JPS61222668A (ja) * 1985-03-28 1986-10-03 Kobe Steel Ltd 複合材料の製造法
US4715892A (en) 1986-03-12 1987-12-29 Olin Corporation Cermet substrate with glass adhesion component
US4828008A (en) * 1987-05-13 1989-05-09 Lanxide Technology Company, Lp Metal matrix composites
US5006417A (en) * 1988-06-09 1991-04-09 Advanced Composite Materials Corporation Ternary metal matrix composite
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US5000246A (en) * 1988-11-10 1991-03-19 Lanxide Technology Company, Lp Flotation process for the formation of metal matrix composite bodies
JP2590603B2 (ja) * 1990-10-09 1997-03-12 三菱電機株式会社 電子部品塔載用基材
US5616421A (en) * 1991-04-08 1997-04-01 Aluminum Company Of America Metal matrix composites containing electrical insulators
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JPH09157773A (ja) * 1995-10-03 1997-06-17 Hitachi Metals Ltd 低熱膨張・高熱伝導性アルミニウム複合材料及びその製造方法
JP4080030B2 (ja) * 1996-06-14 2008-04-23 住友電気工業株式会社 半導体基板材料、半導体基板、半導体装置、及びその製造方法
JP4071843B2 (ja) * 1997-04-11 2008-04-02 住友電気工業株式会社 複合合金部材の製造方法
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Also Published As

Publication number Publication date
EP0938137A3 (en) 1999-11-03
US6507105B1 (en) 2003-01-14
US6123895A (en) 2000-09-26
EP0938137A2 (en) 1999-08-25
JPH11310843A (ja) 1999-11-09

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