WO2006077755A1 - 半導体装置用部材とその製造方法 - Google Patents
半導体装置用部材とその製造方法 Download PDFInfo
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- WO2006077755A1 WO2006077755A1 PCT/JP2006/300181 JP2006300181W WO2006077755A1 WO 2006077755 A1 WO2006077755 A1 WO 2006077755A1 JP 2006300181 W JP2006300181 W JP 2006300181W WO 2006077755 A1 WO2006077755 A1 WO 2006077755A1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
- B22F7/04—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/10—Alloys containing non-metals
- C22C1/1084—Alloys containing non-metals by mechanical alloying (blending, milling)
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C29/00—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
- C22C29/02—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides
- C22C29/06—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides based on carbides, but not containing other metal compounds
- C22C29/065—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides based on carbides, but not containing other metal compounds based on SiC
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
- C22C32/0047—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents
- C22C32/0052—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only carbides
- C22C32/0063—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only carbides based on SiC
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3731—Ceramic materials or glass
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- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
- B22F2998/10—Processes characterised by the sequence of their steps
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- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
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- H01L2924/161—Cap
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- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
Definitions
- the present invention generally relates to a semiconductor device member and a method for manufacturing the same, and more specifically, a semiconductor device as a heat dissipation member such as a heat spreader material and a lid (lid) material constituting the semiconductor device.
- a semiconductor device as a heat dissipation member such as a heat spreader material and a lid (lid) material constituting the semiconductor device.
- the present invention relates to a member for use and a manufacturing method thereof.
- an aluminum nitride (Cu) or aluminum (A1) on the surface is used to insulate a silicon (Si) chip as a semiconductor integrated circuit element (IC) ( A1N)
- IC semiconductor integrated circuit element
- a Si chip is soldered on a sintered substrate, a semiconductor device member targeted by the present invention is soldered under the A1N sintered substrate, and the semiconductor device member is further watered.
- a structure in which a semiconductor device member is screwed to a radiator having an aluminum alloy force is employed.
- A1 -carbide (SiC) composite materials can be manufactured from inexpensive A1 and SiC raw materials without causing pollution problems. Since the coefficient of thermal expansion can be adjusted over a wide range according to surrounding members, etc., it is a lightweight and excellent semiconductor device member. There are several problems with using A1—SiC composites as power device components, and with the exception of some devices, A1—SiC composites have not been adopted in earnest.
- each component or each member is joined with a soldering wire to lower the thermal resistance and improve heat dissipation.
- power devices have been used in hybrid EV cars and EV cars, and light weight, high performance, high reliability, and long service life are desired.
- solder materials are becoming lead (Pb) -free. Since the solder material is inferior in ductility, when it is joined to a material having a high Young's modulus, there is a problem that thermal stress concentrates on the solder part, and there is a possibility of failure, shortening the device life.
- Pb-free solder materials are less ductile than Pb-containing solder materials, so this problem tends to be more closed up.
- the semiconductor device member be inexpensive.
- the coefficient of thermal expansion can be adjusted over a wide range according to the Si chip to be mounted, surrounding members, etc., particularly in the range of 6.5 X 10 _6 ZK to 15 X 10 _6 ZK.
- various materials using composite materials of aluminum and silicon carbide have been proposed as described below. Yes.
- Patent Document 1 discloses a non-acid after powder mixing and forming step.
- a so-called hot forging method previously heated at a temperature of at least ° C and then placed in a mold and subjected to pressure heat treatment (atmosphere is preferably non-acidic atmosphere, upper limit temperature is 800 °
- a member for a semiconductor device having excellent thermal conductivity manufactured in C) is disclosed.
- this semiconductor device member when plating is applied to the surface, it is not possible to prevent clogging defects due to SiC degranulation, hole-like defects, SiC cracks, etc. It may reduce the performance of the device and shorten the lifetime. In addition, it is insufficient to solve the problems of cracks at the screwed points and solder cracks due to thermal stress concentration. Furthermore, this semiconductor device member achieves an improvement in thermal conductivity by being manufactured by pressure treatment at a temperature at which a liquid phase is generated.
- JP 2000-192182 A describes a material used for a heat dissipation substrate of a semiconductor device, in which a molded body is heat-treated under vacuum at a temperature lower than the melting point, and then the temperature higher than the melting point.
- a silicon carbide based composite material that is manufactured by a sintering method and has excellent thermal conductivity despite its high porosity.
- voids are generated in the solder due to high porosity and plating defects, which may reduce the performance of the semiconductor device and shorten its life.
- this silicon carbide composite material has also improved thermal conductivity by being manufactured by forging at a temperature at which a liquid phase is generated.
- Patent Document 3 discloses that as a material used for a heat dissipation substrate of a semiconductor device, a molded body is heated to a temperature equal to or higher than the melting point and then forged under pressure to obtain a forged body.
- a silicon carbide based composite material manufactured by the method and having excellent thermal conductivity. With this material, when plating is performed, plating defects caused by SiC degranulation, hole-like defects, SiC cracks, etc. cannot be prevented, and voids are generated in the solder, degrading the performance of the semiconductor device. At the same time, the life may be shortened.
- this silicon carbide composite material is also manufactured by forging at a temperature at which a liquid phase is generated. Achieves improved thermal conductivity.
- Patent Document 4 discloses a semiconductor heat dissipation substrate by sintering a molded body at a temperature below the melting point and then forging at a temperature of 650 to 800 ° C in the atmosphere. A member for a lid type semiconductor device with high dimensional accuracy has been proposed. In the case of this semiconductor device component, when plating is performed, it is not possible to prevent adhesion defects caused by SiC degranulation, hole-like defects, SiC cracks, etc., and voids are generated in the solder. It may reduce performance and shorten the service life.
- the semiconductor device member is configured using the composite material of aluminum and silicon carbide disclosed in any of the above publications, the above problems (2) and (5) are temporarily solved. Even if it is possible to solve the problems (2) and (5), it is possible to obtain a semiconductor device member that can solve the problems (1), (3), and (4). Can not!,.
- Patent Document 5 discloses that a thermal conductivity produced by a sintering method is lOOWZm'K or more (or 180 WZm'K or more) and a thermal expansion coefficient is 20 X 10 _6
- Zetakappa is a member for a semiconductor device having an improved bonding strength between ⁇ by providing the covering layer mainly composed of aluminum on the surface of the composite material of the following aluminum carbide Kei element is disclosed.
- a method of improving the bonding strength with the resin after manufacturing the Al-SiC composite material, the surface of the Al-SiC composite material is roughened, and the plating method, vapor deposition method, and screen printing method are used. Shows a method of retrofitting an Al layer having a thickness of 1 to: LOO ⁇ m.
- the A1 layer formed by plating, vapor deposition, or screen printing is a thin film, there may be defects in the A1 layer, so other members are soldered on the surface of the A1 layer. In this case, voids are generated in the solder, which may cause problems such as degradation of the performance of the semiconductor device and shortening of the service life.
- Increasing the thickness of the A1 layer reduces the possibility as described above, leading to an increase in manufacturing costs. In addition, it is insufficient to solve the problem of cracking of solder due to cracking at the location to be screwed and concentration of thermal stress.
- the A1 layer is previously formed on the surface layer of the molded body as the starting material of the Al-SiC composite material. Sintering or forging can be considered.
- the above-mentioned JP-A-11-310843 Patent Document 1
- JP-A-2 000-192182 Patent Document 2
- JP-A 2000-160267 Patent Document 3
- the manufacturing method disclosed in the gazette Patent Document 4 is a method of manufacturing by sintering or forging at a temperature at which a V phase shift also causes a liquid phase, so that a thick A1 layer is firmly bonded to the surface. It is difficult to obtain SiC composite material.
- Patent Document 1 Japanese Patent Laid-Open No. 11-310843
- Patent Document 2 JP 2000-192182 A
- Patent Document 3 Japanese Patent Laid-Open No. 2000-160267
- Patent Document 4 Japanese Patent Laid-Open No. 2004-288912
- Patent Document 5 Japanese Patent Laid-Open No. 10-335538
- the temperature of members for semiconductor devices has increased. It is necessary that the thermal conductivity in is good. Therefore, for example, the thermal conductivity of the semiconductor device member at a high temperature (100 ° C.) is 180 WZm′K or more.
- each component is joined with a solder, thereby reducing thermal resistance and improving heat dissipation. Therefore, even if the semiconductor device member is joined to another member with a solder, solder cracking due to thermal stress does not occur.
- an object of the present invention is to provide a semiconductor device member that can satisfy all of the above required characteristics, that is, to form a high-quality plating layer on the surface. (100 ° C) thermal conductivity is 180 WZm.K or more, and it has toughness that does not cause cracking by screwing etc., and solder cracking due to thermal stress even if it is joined to other members with solder Therefore, it is an object of the present invention to provide a low-cost member for a semiconductor device and a manufacturing method thereof. Means for solving the problem
- a semiconductor thermal conductivity at a temperature 100 ° C is 180WZm ⁇ K or higher
- the base material is aluminum in which particulate carbide is dispersed in aluminum or aluminum alloy, the content of carbide is from 30% by weight to 85% by weight, and the starting material is a powder material. It is made of a carbide carbide composite material and has one surface and the other surface opposite to the one surface.
- the surface layer includes aluminum or an aluminum alloy whose starting material is a molten material, which is bonded onto one surface and the other surface of the substrate.
- the powder material means a material in a powder state or a particle shape.
- the melted material refers to a butter-like material solidified from a molten state, and includes a material that has been solidified and then subjected to plastic working such as rolling.
- an aluminum-carbide composite material is used.
- a surface layer having excellent toughness including aluminum or an aluminum alloy can be bonded to the outer surface of the base material having a high thickness and containing no defects on the one surface and the other surface.
- the bonding strength between the base material and the surface layer is 2 X 9.8.
- the base material and the surface layer are joined to each other at least at a part of the interface by metal bonding.
- the average thickness of the surface layer is 2% to 30% of the average thickness of the semiconductor device member.
- the variation in the thickness of the surface layer is within 30% of the average thickness of the surface layer.
- the surface layer preferably contains a recrystallized structure of aluminum or an aluminum alloy.
- the aluminum alloy of the surface layer is composed of magnesium (Mg), silicon (Si), titanium (Ti), copper (Cu), zinc (Zn), manganese (Mn ),chromium
- It contains at least one element selected from the group consisting of (Cr), iron (Fe) and nickel (Ni) forces, and the total content of the elements is 0.005 mass% or more and 15 mass% or less. preferable.
- the purity of aluminum in the surface layer may be 99% or more.
- the surface layer preferably has a Vickers hardness of 25 or more and 185 or less.
- the average particle diameter of the carbide carbide particles is preferably 10 m or more and 150 m or less.
- the semiconductor device member of the present invention further includes a padding layer formed on the outer surface.
- the plating layer contains at least one element selected from the group consisting of nickel (Ni), copper (Cu), silver (Ag), and gold (Au), and has a thickness of 0.1 ⁇ m. m or more and 10 ⁇ m or less is preferable.
- the surface roughness of the plating layer is preferably 2 ⁇ m or less in terms of Ra.
- the value of (YZX) is preferably 0.2% or less.
- a method for manufacturing a member for a semiconductor device includes the following steps.
- aluminum or aluminum is formed on one surface and the other surface of the aluminum-carbide composite material.
- a surface layer having excellent toughness including -um alloy can be joined in a thick and defect-free state.
- the average thickness of the first and second melted materials is 0.1 mm or more and 2. Omm or less.
- the molding pressure is (2 ⁇ 98) MPa or more in the step of obtaining the molded body!
- the melting point or solidus temperature of aluminum or an aluminum alloy is set to T m ° C between the step of obtaining a molded body and the heat compression step.
- Tm is 660 ° C in the case of aluminum, and 577 ° C in the case of aluminum-9 mass% silicon alloy as an example of an aluminum alloy.
- a method for manufacturing a member for a semiconductor device according to another aspect of the present invention includes the following steps.
- aluminum or an aluminum alloy is included on one surface and the other surface of the aluminum-carbide composite material.
- a surface layer having excellent toughness can be joined in a thick and defect-free state.
- an average thickness of the first and second melted materials is 0.1 mm or more and 2. Omm or less.
- the molding pressure is (2 X 98) MPa or more in the step of obtaining the molded body.
- the melting point or solidus temperature of aluminum or an aluminum alloy is set between the step of obtaining a formed body and the heat rolling step.
- the method further includes a step of obtaining a heat-treated body by heat-treating the molded body in a non-acidic atmosphere at a temperature of (Tm-300) ° C or higher and lower than Tm ° C. preferable.
- the heating and rolling step is performed in a non-acidic atmosphere.
- a surface having excellent toughness containing aluminum or an aluminum alloy on one surface and the other surface, which are the outer surfaces of a base material that also has an aluminum-carbide composite material force Because the layers can be joined thick and defect-free, A high-quality plating layer can be formed on the surface, the thermal conductivity at high temperature (100 ° C) is 18 OWZm'K or more, and there is toughness that does not cause cracking by screwing, etc. Even if the solder is joined to another member, solder cracking due to thermal stress does not occur, but a low-cost semiconductor device member can be obtained.
- FIG. 1 is a cross-sectional view showing a schematic cross-section of a member for a semiconductor device as one embodiment of the present invention.
- FIG. 2 shows an insulated gate bipolar transistor (IGBT) unit mounted in an automobile or the like as an example of a power device which is an embodiment of a semiconductor device to which the semiconductor device member shown in FIG. 1 is applied. It is a schematic sectional drawing shown.
- IGBT insulated gate bipolar transistor
- FIG. 3 As an example of another embodiment of the semiconductor device to which the semiconductor device member shown in FIG. 1 is applied, a central processing unit (CPU) unit such as a computer or a server or a microprocessor unit (MPU)
- CPU central processing unit
- MPU microprocessor unit
- FIG. 6 is a schematic cross-sectional view showing a semiconductor device on which the semiconductor integrated circuit element chip is mounted.
- FIG. 4 is a schematic cross-sectional view showing a test method for measuring the peel strength of the A1 layer as the surface layer.
- FIG. 5 is a diagram showing the influence of the heating temperature in the heat treatment process on the thermal expansion coefficient and the thermal conductivity at a temperature of 100 ° C.
- the inventor diligently studied the semiconductor device member and the manufacturing method thereof that can satisfy all of the above five required characteristics, and have arrived at the present invention.
- Member for a semiconductor device information as a substrate, aluminum carbide Kei elements of aluminum or an aluminum alloy is 30-85 wt 0/0 is dispersed in particulate starting material is a powder material - carbide Kei
- the aluminum-carbide composite material and the aluminum-aluminum alloy layer are formed on the upper and lower surfaces of the elemental composite material by forming a layer of aluminum or aluminum-alloy alloy as a starting material as a surface layer.
- FIG. 1 is a cross-sectional view showing a schematic cross-section of a member for a semiconductor device as one embodiment of the present invention.
- the member 1 for a semiconductor device includes a base material 11 made of an aluminum-carbide composite material, one surface of the base material 11, and the other surface opposite to the one surface, And a surface layer 12 containing aluminum or an aluminum alloy bonded on the upper and lower surfaces.
- FIG. 2 shows an insulated gate bipolar transistor mounted in an automobile or the like as an example of a power device as an embodiment of a semiconductor device to which the member for a semiconductor device shown in FIG. 1 is applied ( 1 is a schematic cross-sectional view showing an (IGBT) unit.
- the semiconductor device member 1 of the present invention is made of aluminum or aluminum constituting a radiator after a plating layer is formed on the surface thereof as a heat dissipation substrate (a heat spreader material). It is fixed on the alloy substrate 2 with screws 3.
- a semiconductor integrated circuit element chip including an insulated gate bipolar transistor in this example is formed on the insulating layer 5 having the copper or aluminum layer 5 formed on the upper surface via the solder layer 6. Fixed and mounted.
- the heat generated from the Si chip 7 is high, and each of the copper or aluminum layers 5 and aluminum nitride (A1N) sintered body having high thermal conductivity.
- the semiconductor device member 1 of the present invention As the heat dissipation substrate and is diffused and absorbed by the aluminum or aluminum alloy substrate 2 that is a component of the radiator that is water-cooled. Is done.
- the surface layer 12 (FIG.
- Solder layer 6 is bonded to insulating layer 4 that has a toughness that does not cause cracking by screwing with screw 3, etc., and also has a sintered body strength of aluminum nitride (A1N). Even so, solder cracking due to thermal stress does not occur.
- FIG. 3 shows a central processing unit (CPU) unit such as a computer or a server, or a microcomputer as an example of another embodiment of the semiconductor device to which the member for a semiconductor device shown in FIG. 1 is applied.
- CPU central processing unit
- FIG. 1 is a schematic cross-sectional view showing a semiconductor device on which a semiconductor integrated circuit element chip of a processor unit (MPU) is mounted.
- MPU processor unit
- solder balls 9 are used for electrical joining of the semiconductor integrated circuit element chip and the package (ball grid array (BGA) system).
- the Si chip 7 of the CPU or MPU is fixed to the ceramic substrate 8 on which a large number of solder balls 9 are arranged so as to be electrically connected to the upper and lower surfaces as wiring terminals via the solder layer 6.
- the semiconductor device member 1 of the present invention as a lid member having a plating layer formed on the surface is fixed to the upper surface of the Si chip 7 via a solder layer 6.
- the peripheral portion of the semiconductor device member 1 is disposed so as to surround the periphery of the Si chip 7 and is fixed on the ceramic substrate 8 by grease or the like.
- the heat generated from the Si chip 7 is conducted and dissipated to the semiconductor device member 1 of the present invention as a heat dissipation substrate.
- the surface layer 12 (FIG. 1) having excellent toughness containing aluminum or an aluminum alloy can be bonded in a thick and defect-free state, so that the high quality Can be formed on the surface, and the thermal conductivity at high temperature (100 ° C) is more than Sl80WZm'K. Even if the solder layer 6 is bonded to the Si chip 7, No cracking occurs.
- the amount of carbide particles is 30 to 85 mass%. This is also the force that increases the expansion coefficient, and when it exceeds 85% by mass, it becomes difficult to densify.
- the aluminum-carbide composite material By forming aluminum or aluminum alloy layers on the upper and lower surfaces of the aluminum-carbide composite material, it is possible to form a high-quality plating layer on the outer surface, and good solderability can be obtained.
- Aluminum-carbide composite and aluminum The reason why the bonding strength with the aluminum alloy layer is 2 kgfZmm 2 (2 X 9.8 MPa) or more is that if it is less than 2 kgfZmm 2 , the entire semiconductor device member will not only decrease the thermal conductivity, but also when screwing. This is because the required toughness is reduced and the effect of preventing solder cracking due to thermal stress is reduced.
- the bonding strength is preferably 3 kgfZmm 2 (3 ⁇ 9.8 MPa) or more, more preferably 5 kgfZmm 2 (5 ⁇ 9.8 MPa) or more.
- the bonding strength is preferably lower than the tensile strength of the aluminum or aluminum alloy layer, for example, 1 Okgf / mm 2 (10 ⁇ 9.8 MPa) or less, which is the tensile strength of a general aluminum soft material.
- the inventor has found that when a part of the interface between the aluminum-carbide composite material and the aluminum or aluminum alloy layer is metal-bonded, the thermal conductivity and toughness of the semiconductor device member are obtained. It has been found that the thermal stress can be further improved and the concentration of thermal stress on the solder can be prevented. Whether the metal is bonded can be confirmed, for example, by observing the lattice image of the interface with a transmission electron microscope or the like.
- the average thickness of the aluminum or aluminum alloy layer as the surface layer is preferably 2% or more and 30% or less of the average thickness of the member for a semiconductor device.
- the average thickness of the aluminum or aluminum alloy layer was set to 2% or more and 30% or less of the average thickness of the semiconductor device member. If the average thickness of the semiconductor device member was less than 2%, the toughness was concentrated on the solder. The relaxation effect is insufficient, and if it exceeds 30%, the thermal expansion coefficient is too large.
- the variation in the thickness of the aluminum or aluminum alloy layer as the surface layer is preferably within ⁇ 30% of the average thickness of the aluminum or aluminum alloy layer.
- the variation in thickness is within ⁇ 30% of the average thickness of the aluminum and aluminum alloy layers because it exceeds not only ⁇ 30%, but not only sufficient toughness cannot be obtained, but also the characteristics of thermal conductivity and thermal expansion coefficient. This is because of the large variation.
- the crystal structure of aluminum or aluminum alloy in the surface layer is preferably a recrystallized structure. When the surface layer contains a recrystallized structure, toughness is further improved and thermal stress concentration on the solder can be further eased.
- the average grain size is preferably 1 ⁇ m or more and 500 m or less, more preferably 20 ⁇ m or more and 200 ⁇ m or less.
- the aluminum alloy in the surface layer contains at least one element selected from the group consisting of Mg, Si, Ti, Cu, Zn, Mn, Cr, Fe, and N, and the total content of the elements is 0. Any aluminum alloy that is not less than 005 mass% and not more than 15 mass% may be used. For example, when higher strength is required for the surface layer, aluminum may be alloyed when the crystal grain size is controlled. In that case, adding at least one element selected from the group consisting of Mg, Si, Ti, Cu, Zn, Mn, Cr, Fe, and Ni is sufficient to add 0.005 mass% or more. The reason why the content is made 15% by mass or less is that the effect of addition is less than 0.005% by mass. When the content exceeds 15% by mass, the effect is saturated.
- the surface layer has a purity of 99% or more.
- the reason why the purity is 99% or more is that if it is less than 99%, the effect of improving the thermal conductivity is reduced. More preferably, the purity of aluminum is 99.5% or more.
- the hardness of the aluminum or aluminum alloy of the surface layer is preferably 25 to 18 5 in terms of Vickers hardness.
- the reason why the Vickers hardness is 25 or more and 185 or less is that if the Picker hardness is less than 25, it is difficult to fix with screws, and if it exceeds 185, the toughness is reduced and the effect of reducing thermal stress concentration is reduced. Because.
- the Vickers hardness of the aluminum or aluminum alloy of the surface layer is more preferably 30 or more and 120 or less, and further preferably 30 or more and 70 or less.
- the semiconductor device member of the present invention has excellent toughness, cracks due to screwing or the like do not occur, and the effect of alleviating thermal stress concentration at the soldered portion becomes greater. The effect is obtained.
- a method for evaluating the toughness for example, there are the following methods.
- the m value of the Weibull distribution of tensile strength when the tensile test is performed is 5 or more, preferably 15 or more.
- the average particle size of the silicon carbide particles in the aluminum-carbide composite material is preferably 10 ⁇ m or more and 150 ⁇ m or less.
- the average particle size was set to 10 ⁇ m or more and 150 ⁇ m or less because it was more than 10 ⁇ m / J, and even if it was larger than 150 m, the aluminum or aluminum alloy layer was densely packed in the aluminum-carbide composite material. This is because it becomes difficult to bond with good wearability.
- the inventor in order to improve the solderability of the member for a semiconductor device in which the aluminum or aluminum alloy layer is provided on the upper and lower surfaces of the aluminum-carbide composite material as described above, It was found that a semiconductor device member provided with a plating layer can satisfy all the required characteristics as a semiconductor device member for power devices.
- the surface is preferably plated with at least one element selected from the group consisting of Ni, Cu, Ag, and Au having a thickness of 0.1 ⁇ m to 10 ⁇ m.
- the thickness of the plating layer was set to 0.1 ⁇ m or more and 10 ⁇ m or less. If the thickness is less than 0.1 m, it is insufficient to improve the solderability.
- the surface roughness is preferably 2 m or less in terms of Ra.
- the lower limit of the surface roughness of the plating layer is not particularly limited, but considering the surface roughness that can be industrially achieved, Ra is 0.03 m.
- the surface roughness of the plating layer within the above range is achieved by applying mechanical polishing, chemical polishing, or the like to the base before forming the plating layer.
- the semiconductor device member having a (YZX) value of 0.2% or less is preferable. If the value of (YZX) exceeds 0.2%, bonding with other members becomes insufficient and thermal resistance tends to increase.
- the inventor provides a member for a semiconductor device that forms an aluminum or aluminum alloy layer on the upper and lower surfaces of an aluminum-carbide composite material.
- a production method comprising at least a raw material powder mainly composed of aluminum or an aluminum alloy and a carbide carbide, the amount of the carbide carbide as a whole.
- a step of mixing to form 30 to 85% by mass to form a mixed powder and when forming this mixed powder, an aluminum or aluminum alloy plate is placed above and below, and the mixed powder is placed between them to form and form a molded body
- Tm ° C the solidus temperature
- this compact is heated and compressed at a temperature of (Tm-100) ° C or more and less than Tm ° C. It has been found that a method for manufacturing a member for a semiconductor device including a process is good.
- the inventor installs aluminum or an aluminum alloy on the upper and lower surfaces in the forming process of the formed body to form a formed body, and the formed body has a melting point or a solidus temperature of the aluminum or aluminum alloy plate of Tm °.
- Tm ° melting point or a solidus temperature of the aluminum or aluminum alloy plate of Tm °.
- the heat compression temperature is the melting point of an aluminum or aluminum alloy plate, or when the solidus temperature is Tm ° C, (Tm—100) ° C or more and less than Tm ° C is (Tm— If the temperature is less than 100) ° C, sufficient adhesion, toughness, thermal conductivity, and small warpage cannot be achieved, and if it exceeds T m ° C, seizure occurs in the mold or a liquid phase is generated. Because there is a problem
- the average thickness of the aluminum or aluminum alloy plate is preferably 0.1 mm or more and 2. Omm or less.
- the average thickness of aluminum or aluminum alloy sheet is 0.1 mm or more. 2. Omm or less is less than 0.1 mm, which may damage the carbide particles. 2. If the thickness exceeds Omm, the effect of forming an aluminum or aluminum alloy layer as the surface layer is saturated.
- the molding pressure in the molding process is 2 ton Zcm 2 (2 X 98 MPa) or more, a semiconductor device member having better adhesion and thermal conductivity can be produced.
- the inventor It was found that the thermal conductivity and toughness of the semiconductor device member were more excellent when manufactured by a method including a step of obtaining a heat-treated body by heat treatment at a temperature of Tm-300) ° C or higher and lower than Tm ° C.
- the heat compression step is performed in a non-oxidizing atmosphere, it is possible to further improve the thermal conductivity and toughness.
- the heat compression step may be performed in the air or in an oxidizing atmosphere.
- the inventor when the melting point or solidus temperature of the aluminum or aluminum alloy plate is Tm ° C in the above manufacturing method, (Tm-100) ) If the melting point or solidus temperature of the aluminum or aluminum alloy sheet is Tm ° C instead of the process of heating and compressing at a temperature of ° C or more and less than Tm ° C, the temperature is (Tm-300) ° C As described above, the present inventors have found that a semiconductor device member having similar characteristics and performance can be manufactured at a low cost even in the process of heating and rolling at a temperature lower than Tm ° C.
- the hot rolling temperature is the melting point of the aluminum or aluminum alloy plate or the solidus temperature is Tm ° C, (Tm-300) ° C or more and less than Tm ° C is (Tm-300) If it is less than ° C, sufficient adhesion, toughness, thermal conductivity, and a small amount of warp cannot be achieved, and if it is Tm ° C or more, there are problems such as seizure of the roll and liquid phase. Because.
- the average thickness of the aluminum or aluminum alloy plate is preferably 0.1 mm or more and 2. Omm or less.
- the average thickness of aluminum or aluminum alloy sheet is 0.1 mm or more. 2. Omm or less is the reason why it may damage the carbide particles if it is less than 0.1 mm. As aluminum or aluminum alloy layer This is because the effect of the formation is saturated.
- the molding pressure in the molding step is 2 tonZcm 2 (2 X 98 MPa) or more, a semiconductor device member having better adhesion and thermal conductivity can be produced.
- the inventor can also obtain a melting point or a solidus temperature of an aluminum or aluminum alloy plate in a non-acidic atmosphere between a forming step and a heat rolling step.
- Tm ° C the thermal conductivity and toughness of the semiconductor device member can be improved by manufacturing a method including a step of obtaining a heat-treated body by heat treatment at a temperature of (Tm-300) ° C or higher and lower than Tm ° C. I found it better.
- the inventor can further improve the thermal conductivity and toughness when the heat rolling step is performed in a non-acidic atmosphere. Heading. In addition, you may perform a heat rolling process in air
- Aluminum (A1) powder with an average particle size of 10 ⁇ m and silicon carbide (Si C) powder with an average particle size of 15 ⁇ m were mixed at a SiC content as shown in Table 1 while changing the mixing ratio.
- a JIS standard 1050 aluminum plate was placed on the upper and lower surfaces of the mixed powder, that is, the mixed powder was sandwiched between aluminum plates with the thicknesses shown in Table 1 to produce a compact (molding process). ). Molding of the mixed powder was performed using a 100-ton press machine so that a load of 72 tons was applied to the powder to obtain a forming pressure force of tonZcm 2 (2 X 98 MPa).
- the thickness of the A1 layer as the finally obtained surface layer was measured, and the ratio of the thickness of the A1 layer to the thickness of the sample was calculated. [0107] ( ⁇ ) ⁇ ⁇ ⁇ ⁇ Variation in thickness of one layer [%]
- the thickness variation with respect to the average value of the thickness of the finally obtained surface layer was measured.
- the thermal expansion coefficient was measured by heating a sample cut to a size of 4 mm x 4 mm x 20 mm and simultaneously detecting the elongation with a differential transformer.
- thermo constant measuring device TC 700 manufactured by ULVAC-RIKO. Specifically, laser light is irradiated for a short time on one side of a sample cut to a size of 10 mm in diameter and 2 mm in thickness to give thermal energy. At this time, unsteady temperature change on the opposite surface of the sample was measured with a thermocouple and an InSb (indium antimony) infrared detector, and the thermal conductivity was obtained by obtaining specific heat and thermal diffusivity, respectively.
- InSb indium antimony
- FIG. 4 is a schematic cross-sectional view showing a test method for measuring the peel strength of the A1 layer as the surface layer.
- the peel test of the A1 layer is performed by using a tensile test jig 20 with a joint surface diameter of 10 mm and a tensile test gripping part diameter of 8 mm.
- the test material 1 cut into an Omm disk was attached to the upper and lower surfaces of the test piece 1 with a trade name of Scotch Weld DP460 manufactured by Sumitomo 3EM Co., Ltd., and after curing, a tensile test was performed by pulling in the direction indicated by the arrow.
- As the tensile tester an Instron tensile tester with a tensile shaft alignment mechanism was used.
- the bonding strength between the A1 layer as the surface layer 12 and the aluminum-carbide composite material as the substrate 11 is measured. Evaluated.
- the amount of warpage Y [mm] relative to the length X 60 [mm] of one side of each sample was measured, and the ratio of the amount of warpage to the length was calculated.
- solder wettability of the inventive examples 1 to 7 with nickel plating was evaluated.
- each sample was immersed in a eutectic lead-tin solder bath heated to a temperature of 200 ° C. and then pulled up to observe the degree of solder adhesion. After immersion, the surface of the plating layer had a good adhesion of the solder where the solder did not adhere, and the surface roughness of the plating layer was 2 m or less in Ra. In samples where the surface roughness of the plating layer was Ra and was larger than 2 m, there was a spot where no solder adhered on the surface of the plating layer.
- copper, silver, and gold plating layers were applied to the surface of each sample of Invention Examples 1 to 7 to evaluate solder wettability. The same results as described above were obtained.
- SiC content of 30 to 85 wt% of the thermal expansion coefficient in the present invention Examples 1-7 are in 6. 5 ⁇ 15 ⁇ 10 _6 ⁇ , thermal conductivity at a temperature 100 ° C The rate was over 180WZm'K.
- the thermal expansion coefficient was larger than 15 X 10 — 6 ZK. Comparative Example 3 having an SiC content greater than 85% by mass could not be produced.
- the content of SiC was 60 mass 0/0, the average particle diameter of SiC powder 5 m, 10 ⁇ m, 80 m, is 1 50 im, 200 ⁇ 111 and Heni spoon, 0.1 the thickness of Anoreminiumu layer 050mm , 0. 100 mm, 0. 500 mm, 1. 000 mm, 2. 000 mm, 2. 500 mm.
- the thermal conductivity at a temperature of 100 ° C. of each sample, the variation in the thickness of the A1 layer, and the ratio of warpage were measured in the same manner as in Example 1. The measurement results are shown in Table 2, Table 3 and Table 4.
- the toughness of the samples obtained in Example 5 of the present invention when the molding pressure was 98 MPa and 2 X 98 MPa was evaluated. Toughness is determined by drilling a 10.5mm diameter hole with a lubricant while applying lubricant to the sample, inserting an M10 bolt, and tightening the nut with a torque of 20kgf'm (2 X 98N'm). It was evaluated as a percentage of the total number of samples. The ratio of the number of cracked samples when the molding pressure was 2 ⁇ 98 MPa was 20% as compared with the case where the molding pressure was 98 MPa. It can be said that increasing the molding pressure improves toughness.
- Example 6 In the production methods of Invention Examples 1 to 7 shown in Table 1, the molded body was heat-treated at a temperature of 600 ° C for 5 hours in a nitrogen gas atmosphere between the molding step and the heating and compression step. A sample was prepared in the same manner as in Example 1. The effects of the heat treatment process as an intermediate process on the thermal expansion coefficient and the thermal conductivity at a temperature of 100 ° C were investigated. The thermal expansion coefficient and the thermal conductivity were measured in the same manner as in Example 1. The results are shown in Table 6. In Table 6, “ ⁇ ” and “ K ” mean thermal expansion coefficient and thermal conductivity, respectively.
- Example 5 of the present invention toughness was evaluated for each of the samples with and without the heat treatment step. Toughness was cracked by drilling a 10.5mm diameter hole with a drill while applying lubricant to the sample, inserting an M10 bolt, and tightening the nut to a torque of 20kgf'm (2 X 98N'm). The number was evaluated as a percentage of the total number of samples. The ratio of the number of cracked samples with the heat treatment process was 10% compared to the case without the heat treatment process. It can be seen that the toughness is improved when the heating step is performed as an intermediate step.
- the powder was mixed at a SiC content as shown in Table 7 while changing the mixing ratio, and JIS standard 1050 aluminum plates were placed on the upper and lower surfaces of the mixed powder.
- a compact was produced by molding with the mixed powder sandwiched between plates (molding process). Molding of the mixed powder was performed using a 100-ton press machine so that a load of 72 tons was applied to the powder to obtain a forming pressure force of tonZcm 2 (2 X 98 MPa).
- the molded body thus obtained was heated and rolled at a temperature of 600 ° C., and subjected to hot rolling that passed 5 times at a workability of 5% to heat and roll the molded body (hot rolling). Process). In this way, a sample having a length of 60 mm, a width of 60 mm, and a thickness of 5 mm was produced. Each sample was evaluated in the same manner as Example 1 for each sample. The properties obtained are shown in Table 7.
- each sample was subjected to nickel plating with a thickness of 2 ⁇ m and heated to a temperature of 250 ° C. The presence or absence of voids was observed, but no voids were observed.
- tin (Sn) -3 was prepared by using an A1N sintered body with a copper or aluminum layer on the surface as a solder material for each sample with a 2 m thick nickel plating on the surface.
- no cracks were observed at the solder joints.
- a member for a semiconductor device of the present invention is a semiconductor device called a power device such as an insulated gate bipolar transistor (IGBT) unit mounted in an automobile or the like, a central processing unit (CPU) unit such as a computer or a server, or It is used as a heat dissipating member such as a heat spreader material and a lid (lid) material in a semiconductor device on which a semiconductor integrated circuit element chip of a microprocessor unit (MPU) is mounted.
- a power device such as an insulated gate bipolar transistor (IGBT) unit mounted in an automobile or the like
- CPU central processing unit
- CPU central processing unit
- lid lid
Abstract
Description
Claims
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JP2006553861A JP4913605B2 (ja) | 2005-01-20 | 2006-01-11 | 半導体装置用部材の製造方法 |
EP06711530A EP1858078A4 (en) | 2005-01-20 | 2006-01-11 | ELEMENT FOR A SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR |
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EP (1) | EP1858078A4 (ja) |
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CN110434334A (zh) * | 2019-08-19 | 2019-11-12 | 常州泰格尔电子材料科技有限公司 | 一种厨具用超导热解冻板的制备方法 |
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US7993728B2 (en) | 2006-04-26 | 2011-08-09 | Denki Kagaku Kogyo Kabushiki Kaisha | Aluminum/silicon carbide composite and radiating part comprising the same |
WO2008146646A1 (ja) * | 2007-05-29 | 2008-12-04 | A.L.M.T.Corp. | 半導体装置用ヒートスプレッダとその製造方法 |
JP2008300450A (ja) * | 2007-05-29 | 2008-12-11 | Allied Material Corp | 半導体装置用ヒートスプレッダとその製造方法 |
JP2010278171A (ja) * | 2009-05-28 | 2010-12-09 | Denki Kagaku Kogyo Kk | パワー半導体及びその製造方法 |
JP2012057252A (ja) * | 2010-08-12 | 2012-03-22 | Denki Kagaku Kogyo Kk | アルミニウム−炭化珪素質複合体 |
JP2013089867A (ja) * | 2011-10-20 | 2013-05-13 | Showa Denko Kk | 電子素子搭載用基板および放熱装置 |
JP2020520553A (ja) * | 2017-05-02 | 2020-07-09 | シーメンス アクチエンゲゼルシヤフトSiemens Aktiengesellschaft | 2つの基板間に挿入されたデバイスを有する電子アセンブリおよびその製造方法 |
WO2023058598A1 (ja) * | 2021-10-06 | 2023-04-13 | デンカ株式会社 | 放熱部材 |
CN116618647A (zh) * | 2023-07-21 | 2023-08-22 | 安徽诺星航空科技有限公司 | 一种钼铜合金复合材料及其制备工艺 |
CN116618647B (zh) * | 2023-07-21 | 2023-10-13 | 安徽诺星航空科技有限公司 | 一种钼铜合金复合材料及其制备工艺 |
Also Published As
Publication number | Publication date |
---|---|
CN101107707A (zh) | 2008-01-16 |
JP4913605B2 (ja) | 2012-04-11 |
US7749430B2 (en) | 2010-07-06 |
US20080122052A1 (en) | 2008-05-29 |
EP1858078A4 (en) | 2009-03-04 |
JPWO2006077755A1 (ja) | 2008-06-19 |
CN100590856C (zh) | 2010-02-17 |
EP1858078A1 (en) | 2007-11-21 |
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