JP4285949B2 - 窒化物半導体発光素子 - Google Patents

窒化物半導体発光素子 Download PDF

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Publication number
JP4285949B2
JP4285949B2 JP2002187786A JP2002187786A JP4285949B2 JP 4285949 B2 JP4285949 B2 JP 4285949B2 JP 2002187786 A JP2002187786 A JP 2002187786A JP 2002187786 A JP2002187786 A JP 2002187786A JP 4285949 B2 JP4285949 B2 JP 4285949B2
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layer
well
nitride semiconductor
doped
emitting device
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JP2002187786A
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Japanese (ja)
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JP2004031770A5 (enExample
JP2004031770A (ja
Inventor
剛 神川
有三 津田
真也 石田
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Sharp Corp
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Sharp Corp
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JP2002187786A 2002-06-27 2002-06-27 窒化物半導体発光素子 Expired - Lifetime JP4285949B2 (ja)

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JP2002187786A JP4285949B2 (ja) 2002-06-27 2002-06-27 窒化物半導体発光素子

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JP2002187786A JP4285949B2 (ja) 2002-06-27 2002-06-27 窒化物半導体発光素子

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JP2004031770A JP2004031770A (ja) 2004-01-29
JP2004031770A5 JP2004031770A5 (enExample) 2005-10-20
JP4285949B2 true JP4285949B2 (ja) 2009-06-24

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JP2002187786A Expired - Lifetime JP4285949B2 (ja) 2002-06-27 2002-06-27 窒化物半導体発光素子

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Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006156891A (ja) * 2004-12-01 2006-06-15 Sharp Corp 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
TWI282636B (en) * 2005-12-29 2007-06-11 Epistar Corp Semiconductor light-emitting device and manufacturing method thereof
JP2007214221A (ja) 2006-02-08 2007-08-23 Sharp Corp 窒化物半導体レーザ素子
JP5191843B2 (ja) 2008-09-09 2013-05-08 株式会社東芝 半導体発光素子及びウェーハ
JP5332451B2 (ja) 2008-09-25 2013-11-06 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子及びその製造方法
JP5044692B2 (ja) * 2009-08-17 2012-10-10 株式会社東芝 窒化物半導体発光素子
KR101646255B1 (ko) * 2009-12-22 2016-08-05 엘지이노텍 주식회사 발광 소자, 발광 소자 패키지 및 발광 소자 제조방법
JP5446044B2 (ja) * 2010-01-22 2014-03-19 日本電気株式会社 窒化物半導体発光素子および電子装置
JP2011159771A (ja) * 2010-01-29 2011-08-18 Nec Corp 窒化物半導体発光素子、窒化物半導体発光素子の製造方法、および電子装置
KR20120138080A (ko) * 2011-06-14 2012-12-24 엘지이노텍 주식회사 발광 소자
JP5868650B2 (ja) * 2011-10-11 2016-02-24 株式会社東芝 半導体発光素子
JP5380516B2 (ja) * 2011-11-18 2014-01-08 株式会社東芝 窒化物半導体発光素子
KR20140019635A (ko) * 2012-08-06 2014-02-17 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
KR101953716B1 (ko) * 2012-08-23 2019-03-05 엘지이노텍 주식회사 발광소자, 발광 소자 패키지 및 조명 시스템
KR101919109B1 (ko) 2012-09-13 2018-11-16 엘지이노텍 주식회사 자외선 발광 소자 및 자외선 발광 소자 패키지
KR101963222B1 (ko) * 2012-10-31 2019-03-28 엘지이노텍 주식회사 발광소자
JP2015038949A (ja) 2013-07-17 2015-02-26 株式会社東芝 半導体発光素子及びその製造方法
JP6281469B2 (ja) * 2014-11-03 2018-02-21 豊田合成株式会社 発光素子の製造方法
JP2015053531A (ja) * 2014-12-17 2015-03-19 株式会社東芝 半導体発光素子
DE102015100029A1 (de) * 2015-01-05 2016-07-07 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
JP6225945B2 (ja) 2015-05-26 2017-11-08 日亜化学工業株式会社 半導体レーザ素子
KR102486331B1 (ko) * 2016-01-07 2023-01-10 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자
FR3050872B1 (fr) * 2016-04-27 2019-06-14 Commissariat A L'energie Atomique Et Aux Energies Alternatives Diode electroluminescente comprenant au moins une couche intermediaire de plus grand gap disposee dans au moins une couche barriere de la zone active
KR102648675B1 (ko) * 2017-01-11 2024-03-19 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자 및 이를 갖는 반도체 소자 패키지
CN107240627B (zh) * 2017-05-16 2019-06-21 东南大学 一种具有双掺杂多量子阱结构的紫外发光二极管
JP7295371B2 (ja) * 2018-08-31 2023-06-21 日亜化学工業株式会社 半導体レーザ素子
CN114747102B (zh) * 2019-11-27 2025-11-21 新唐科技日本株式会社 半导体发光元件及半导体发光元件的制造方法
CN116472616B (zh) * 2020-11-24 2025-07-18 苏州晶湛半导体有限公司 量子阱结构及其制备方法和发光二极管

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3304782B2 (ja) * 1996-09-08 2002-07-22 豊田合成株式会社 半導体発光素子
JP3438648B2 (ja) * 1999-05-17 2003-08-18 松下電器産業株式会社 窒化物半導体素子
JP2003229645A (ja) * 2002-01-31 2003-08-15 Nec Corp 量子井戸構造およびそれを用いた半導体素子ならびに半導体素子の製造方法

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