JP4285836B2 - 半導体集積回路装置 - Google Patents
半導体集積回路装置 Download PDFInfo
- Publication number
- JP4285836B2 JP4285836B2 JP16580899A JP16580899A JP4285836B2 JP 4285836 B2 JP4285836 B2 JP 4285836B2 JP 16580899 A JP16580899 A JP 16580899A JP 16580899 A JP16580899 A JP 16580899A JP 4285836 B2 JP4285836 B2 JP 4285836B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- diffusion region
- macro cell
- diffusion
- power supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/90—Masterslice integrated circuits
- H10D84/903—Masterslice integrated circuits comprising field effect technology
- H10D84/907—CMOS gate arrays
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16580899A JP4285836B2 (ja) | 1999-06-11 | 1999-06-11 | 半導体集積回路装置 |
| US09/413,750 US6355948B2 (en) | 1999-06-11 | 1999-10-06 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16580899A JP4285836B2 (ja) | 1999-06-11 | 1999-06-11 | 半導体集積回路装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000353747A JP2000353747A (ja) | 2000-12-19 |
| JP2000353747A5 JP2000353747A5 (enExample) | 2006-07-27 |
| JP4285836B2 true JP4285836B2 (ja) | 2009-06-24 |
Family
ID=15819399
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16580899A Expired - Fee Related JP4285836B2 (ja) | 1999-06-11 | 1999-06-11 | 半導体集積回路装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6355948B2 (enExample) |
| JP (1) | JP4285836B2 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5590802B2 (ja) | 2008-04-11 | 2014-09-17 | ピーエスフォー ルクスコ エスエイアールエル | 基本セルおよび半導体装置 |
| CN103890929A (zh) * | 2011-10-31 | 2014-06-25 | 松下电器产业株式会社 | 半导体集成电路装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04267553A (ja) | 1991-02-22 | 1992-09-24 | Fujitsu Ltd | 半導体集積回路 |
| JPH0778949A (ja) | 1993-09-06 | 1995-03-20 | Olympus Optical Co Ltd | マスタースライス方式の半導体装置 |
| JPH08222640A (ja) | 1995-02-16 | 1996-08-30 | New Japan Radio Co Ltd | 半導体集積回路装置 |
| TW400650B (en) * | 1996-11-26 | 2000-08-01 | Hitachi Ltd | Semiconductor integrated circuit device |
-
1999
- 1999-06-11 JP JP16580899A patent/JP4285836B2/ja not_active Expired - Fee Related
- 1999-10-06 US US09/413,750 patent/US6355948B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US20020000578A1 (en) | 2002-01-03 |
| JP2000353747A (ja) | 2000-12-19 |
| US6355948B2 (en) | 2002-03-12 |
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