JP4274597B2 - 半導体集積回路装置 - Google Patents
半導体集積回路装置 Download PDFInfo
- Publication number
- JP4274597B2 JP4274597B2 JP14889998A JP14889998A JP4274597B2 JP 4274597 B2 JP4274597 B2 JP 4274597B2 JP 14889998 A JP14889998 A JP 14889998A JP 14889998 A JP14889998 A JP 14889998A JP 4274597 B2 JP4274597 B2 JP 4274597B2
- Authority
- JP
- Japan
- Prior art keywords
- power supply
- potential
- internal power
- internal
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 32
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 claims description 21
- 239000003990 capacitor Substances 0.000 claims description 17
- 230000004044 response Effects 0.000 claims description 17
- 230000004913 activation Effects 0.000 claims description 10
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 230000003111 delayed effect Effects 0.000 claims description 3
- 230000003321 amplification Effects 0.000 claims description 2
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 2
- 230000000737 periodic effect Effects 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 23
- 230000015654 memory Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000009118 appropriate response Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is DC
- G05F1/462—Regulating voltage or current wherein the variable actually regulated by the final control device is DC as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
- G05F1/465—Internal voltage generators for integrated circuits, e.g. step down generators
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
- Dc-Dc Converters (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14889998A JP4274597B2 (ja) | 1998-05-29 | 1998-05-29 | 半導体集積回路装置 |
| US09/191,122 US6333669B1 (en) | 1998-05-29 | 1998-11-13 | Voltage converting circuit allowing control of current drivability in accordance with operational frequency |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14889998A JP4274597B2 (ja) | 1998-05-29 | 1998-05-29 | 半導体集積回路装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH11339472A JPH11339472A (ja) | 1999-12-10 |
| JPH11339472A5 JPH11339472A5 (en:Method) | 2005-10-06 |
| JP4274597B2 true JP4274597B2 (ja) | 2009-06-10 |
Family
ID=15463175
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14889998A Expired - Fee Related JP4274597B2 (ja) | 1998-05-29 | 1998-05-29 | 半導体集積回路装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6333669B1 (en:Method) |
| JP (1) | JP4274597B2 (en:Method) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3829054B2 (ja) * | 1999-12-10 | 2006-10-04 | 株式会社東芝 | 半導体集積回路 |
| JP2001211640A (ja) * | 2000-01-20 | 2001-08-03 | Hitachi Ltd | 電子装置と半導体集積回路及び情報処理システム |
| JP2002232243A (ja) * | 2001-02-01 | 2002-08-16 | Hitachi Ltd | 半導体集積回路装置 |
| US6897715B2 (en) * | 2002-05-30 | 2005-05-24 | Analog Devices, Inc. | Multimode voltage regulator |
| US6819165B2 (en) * | 2002-05-30 | 2004-11-16 | Analog Devices, Inc. | Voltage regulator with dynamically boosted bias current |
| US6753722B1 (en) * | 2003-01-30 | 2004-06-22 | Xilinx, Inc. | Method and apparatus for voltage regulation within an integrated circuit |
| US7454643B2 (en) * | 2003-04-30 | 2008-11-18 | Marvell World Trade Ltd. | Pre-emptive power supply control system and method |
| JP4607608B2 (ja) * | 2005-02-04 | 2011-01-05 | 株式会社東芝 | 半導体集積回路 |
| US20070069807A1 (en) * | 2005-09-23 | 2007-03-29 | Intel Corporation | Voltage regulation having varying reference during operation |
| KR100943115B1 (ko) * | 2007-07-25 | 2010-02-18 | 주식회사 하이닉스반도체 | 전압 변환 회로 및 이를 구비한 플래시 메모리 소자 |
| JP2009181638A (ja) * | 2008-01-30 | 2009-08-13 | Elpida Memory Inc | 半導体記憶装置 |
| US8473013B2 (en) | 2008-04-23 | 2013-06-25 | Qualcomm Incorporated | Multi-level duty cycling |
| KR100937939B1 (ko) * | 2008-04-24 | 2010-01-21 | 주식회사 하이닉스반도체 | 반도체 소자의 내부전압 생성회로 |
| KR101450255B1 (ko) * | 2008-10-22 | 2014-10-13 | 삼성전자주식회사 | 반도체 메모리 장치의 내부 전원 전압 발생 회로 |
| US20110309808A1 (en) | 2010-06-16 | 2011-12-22 | Aeroflex Colorado Springs Inc. | Bias-starving circuit with precision monitoring loop for voltage regulators with enhanced stability |
| DE102010044924B4 (de) | 2010-09-10 | 2021-09-16 | Texas Instruments Deutschland Gmbh | Elektronische Vorrichtung und Verfahren für diskrete lastadaptive Spannungsregelung |
| RU176851U1 (ru) * | 2016-12-09 | 2018-01-31 | Общество С Ограниченной Ответственностью "Ультраконденсаторы Феникс" | Система питания мощной рентгенологической установки |
| RU177140U1 (ru) * | 2017-02-14 | 2018-02-12 | Общество С Ограниченной Ответственностью "Ультраконденсаторы Феникс" | Устройство для зарядки суперконденсаторных батарей |
| US10386875B2 (en) * | 2017-04-27 | 2019-08-20 | Pixart Imaging Inc. | Bandgap reference circuit and sensor chip using the same |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2557271B2 (ja) * | 1990-04-06 | 1996-11-27 | 三菱電機株式会社 | 内部降圧電源電圧を有する半導体装置における基板電圧発生回路 |
| US5295112A (en) * | 1991-10-30 | 1994-03-15 | Nec Corporation | Semiconductor memory |
| JP3705842B2 (ja) * | 1994-08-04 | 2005-10-12 | 株式会社ルネサステクノロジ | 半導体装置 |
| JP3574506B2 (ja) | 1995-06-13 | 2004-10-06 | 松下電器産業株式会社 | 半導体記憶装置 |
| JP4036487B2 (ja) * | 1995-08-18 | 2008-01-23 | 株式会社ルネサステクノロジ | 半導体記憶装置、および半導体回路装置 |
| US5736879A (en) * | 1996-02-02 | 1998-04-07 | Siliconix Incorporated | Closed-loop frequency-to-current converter with integrable capacitances |
| JPH10228769A (ja) * | 1997-02-14 | 1998-08-25 | Mitsubishi Electric Corp | 半導体記憶装置 |
| JPH10269768A (ja) * | 1997-03-26 | 1998-10-09 | Mitsubishi Electric Corp | 半導体集積回路 |
-
1998
- 1998-05-29 JP JP14889998A patent/JP4274597B2/ja not_active Expired - Fee Related
- 1998-11-13 US US09/191,122 patent/US6333669B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH11339472A (ja) | 1999-12-10 |
| US6333669B1 (en) | 2001-12-25 |
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