JPH11339472A5 - - Google Patents

Info

Publication number
JPH11339472A5
JPH11339472A5 JP1998148899A JP14889998A JPH11339472A5 JP H11339472 A5 JPH11339472 A5 JP H11339472A5 JP 1998148899 A JP1998148899 A JP 1998148899A JP 14889998 A JP14889998 A JP 14889998A JP H11339472 A5 JPH11339472 A5 JP H11339472A5
Authority
JP
Japan
Prior art keywords
sig signal
level period
period
transistors
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998148899A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11339472A (ja
JP4274597B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP14889998A priority Critical patent/JP4274597B2/ja
Priority claimed from JP14889998A external-priority patent/JP4274597B2/ja
Priority to US09/191,122 priority patent/US6333669B1/en
Publication of JPH11339472A publication Critical patent/JPH11339472A/ja
Publication of JPH11339472A5 publication Critical patent/JPH11339472A5/ja
Application granted granted Critical
Publication of JP4274597B2 publication Critical patent/JP4274597B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP14889998A 1998-05-29 1998-05-29 半導体集積回路装置 Expired - Fee Related JP4274597B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP14889998A JP4274597B2 (ja) 1998-05-29 1998-05-29 半導体集積回路装置
US09/191,122 US6333669B1 (en) 1998-05-29 1998-11-13 Voltage converting circuit allowing control of current drivability in accordance with operational frequency

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14889998A JP4274597B2 (ja) 1998-05-29 1998-05-29 半導体集積回路装置

Publications (3)

Publication Number Publication Date
JPH11339472A JPH11339472A (ja) 1999-12-10
JPH11339472A5 true JPH11339472A5 (en:Method) 2005-10-06
JP4274597B2 JP4274597B2 (ja) 2009-06-10

Family

ID=15463175

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14889998A Expired - Fee Related JP4274597B2 (ja) 1998-05-29 1998-05-29 半導体集積回路装置

Country Status (2)

Country Link
US (1) US6333669B1 (en:Method)
JP (1) JP4274597B2 (en:Method)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3829054B2 (ja) * 1999-12-10 2006-10-04 株式会社東芝 半導体集積回路
JP2001211640A (ja) * 2000-01-20 2001-08-03 Hitachi Ltd 電子装置と半導体集積回路及び情報処理システム
JP2002232243A (ja) * 2001-02-01 2002-08-16 Hitachi Ltd 半導体集積回路装置
US6897715B2 (en) * 2002-05-30 2005-05-24 Analog Devices, Inc. Multimode voltage regulator
US6819165B2 (en) * 2002-05-30 2004-11-16 Analog Devices, Inc. Voltage regulator with dynamically boosted bias current
US6753722B1 (en) * 2003-01-30 2004-06-22 Xilinx, Inc. Method and apparatus for voltage regulation within an integrated circuit
US7454643B2 (en) * 2003-04-30 2008-11-18 Marvell World Trade Ltd. Pre-emptive power supply control system and method
JP4607608B2 (ja) * 2005-02-04 2011-01-05 株式会社東芝 半導体集積回路
US20070069807A1 (en) * 2005-09-23 2007-03-29 Intel Corporation Voltage regulation having varying reference during operation
KR100943115B1 (ko) * 2007-07-25 2010-02-18 주식회사 하이닉스반도체 전압 변환 회로 및 이를 구비한 플래시 메모리 소자
JP2009181638A (ja) * 2008-01-30 2009-08-13 Elpida Memory Inc 半導体記憶装置
US8473013B2 (en) 2008-04-23 2013-06-25 Qualcomm Incorporated Multi-level duty cycling
KR100937939B1 (ko) * 2008-04-24 2010-01-21 주식회사 하이닉스반도체 반도체 소자의 내부전압 생성회로
KR101450255B1 (ko) * 2008-10-22 2014-10-13 삼성전자주식회사 반도체 메모리 장치의 내부 전원 전압 발생 회로
US20110309808A1 (en) 2010-06-16 2011-12-22 Aeroflex Colorado Springs Inc. Bias-starving circuit with precision monitoring loop for voltage regulators with enhanced stability
DE102010044924B4 (de) 2010-09-10 2021-09-16 Texas Instruments Deutschland Gmbh Elektronische Vorrichtung und Verfahren für diskrete lastadaptive Spannungsregelung
RU176851U1 (ru) * 2016-12-09 2018-01-31 Общество С Ограниченной Ответственностью "Ультраконденсаторы Феникс" Система питания мощной рентгенологической установки
RU177140U1 (ru) * 2017-02-14 2018-02-12 Общество С Ограниченной Ответственностью "Ультраконденсаторы Феникс" Устройство для зарядки суперконденсаторных батарей
US10386875B2 (en) * 2017-04-27 2019-08-20 Pixart Imaging Inc. Bandgap reference circuit and sensor chip using the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2557271B2 (ja) * 1990-04-06 1996-11-27 三菱電機株式会社 内部降圧電源電圧を有する半導体装置における基板電圧発生回路
US5295112A (en) * 1991-10-30 1994-03-15 Nec Corporation Semiconductor memory
JP3705842B2 (ja) * 1994-08-04 2005-10-12 株式会社ルネサステクノロジ 半導体装置
JP3574506B2 (ja) 1995-06-13 2004-10-06 松下電器産業株式会社 半導体記憶装置
JP4036487B2 (ja) * 1995-08-18 2008-01-23 株式会社ルネサステクノロジ 半導体記憶装置、および半導体回路装置
US5736879A (en) * 1996-02-02 1998-04-07 Siliconix Incorporated Closed-loop frequency-to-current converter with integrable capacitances
JPH10228769A (ja) * 1997-02-14 1998-08-25 Mitsubishi Electric Corp 半導体記憶装置
JPH10269768A (ja) * 1997-03-26 1998-10-09 Mitsubishi Electric Corp 半導体集積回路

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