JP4272486B2 - 薄膜形成装置及び薄膜形成装置の洗浄方法 - Google Patents

薄膜形成装置及び薄膜形成装置の洗浄方法 Download PDF

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Publication number
JP4272486B2
JP4272486B2 JP2003305722A JP2003305722A JP4272486B2 JP 4272486 B2 JP4272486 B2 JP 4272486B2 JP 2003305722 A JP2003305722 A JP 2003305722A JP 2003305722 A JP2003305722 A JP 2003305722A JP 4272486 B2 JP4272486 B2 JP 4272486B2
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Japan
Prior art keywords
thin film
gas
cleaning
film forming
reaction chamber
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Expired - Fee Related
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JP2003305722A
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English (en)
Japanese (ja)
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JP2005079218A (ja
Inventor
一秀 長谷部
充弘 岡田
弘道 小番
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2003305722A priority Critical patent/JP4272486B2/ja
Priority to TW093124557A priority patent/TW200522165A/zh
Priority to US10/927,415 priority patent/US7520937B2/en
Priority to KR1020040067670A priority patent/KR100893252B1/ko
Publication of JP2005079218A publication Critical patent/JP2005079218A/ja
Application granted granted Critical
Publication of JP4272486B2 publication Critical patent/JP4272486B2/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/905—Cleaning of reaction chamber

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP2003305722A 2003-08-29 2003-08-29 薄膜形成装置及び薄膜形成装置の洗浄方法 Expired - Fee Related JP4272486B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2003305722A JP4272486B2 (ja) 2003-08-29 2003-08-29 薄膜形成装置及び薄膜形成装置の洗浄方法
TW093124557A TW200522165A (en) 2003-08-29 2004-08-16 Thin film forming apparatus and method of cleaning the same
US10/927,415 US7520937B2 (en) 2003-08-29 2004-08-26 Thin film forming apparatus and method of cleaning the same
KR1020040067670A KR100893252B1 (ko) 2003-08-29 2004-08-27 박막 형성 장치 및 박막 형성 장치의 세정 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003305722A JP4272486B2 (ja) 2003-08-29 2003-08-29 薄膜形成装置及び薄膜形成装置の洗浄方法

Publications (2)

Publication Number Publication Date
JP2005079218A JP2005079218A (ja) 2005-03-24
JP4272486B2 true JP4272486B2 (ja) 2009-06-03

Family

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JP2003305722A Expired - Fee Related JP4272486B2 (ja) 2003-08-29 2003-08-29 薄膜形成装置及び薄膜形成装置の洗浄方法

Country Status (4)

Country Link
US (1) US7520937B2 (https=)
JP (1) JP4272486B2 (https=)
KR (1) KR100893252B1 (https=)
TW (1) TW200522165A (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8211235B2 (en) * 2005-03-04 2012-07-03 Picosun Oy Apparatuses and methods for deposition of material on surfaces
US7521705B2 (en) * 2005-08-15 2009-04-21 Micron Technology, Inc. Reproducible resistance variable insulating memory devices having a shaped bottom electrode
US7494943B2 (en) * 2005-10-20 2009-02-24 Tokyo Electron Limited Method for using film formation apparatus
US20070093069A1 (en) * 2005-10-21 2007-04-26 Chien-Hua Tsai Purge process after dry etching
JP4786495B2 (ja) * 2005-11-24 2011-10-05 東京エレクトロン株式会社 薄膜形成装置の洗浄方法、薄膜形成方法、薄膜形成装置及びプログラム
JP4245012B2 (ja) * 2006-07-13 2009-03-25 東京エレクトロン株式会社 処理装置及びこのクリーニング方法
US20080142046A1 (en) * 2006-12-13 2008-06-19 Andrew David Johnson Thermal F2 etch process for cleaning CVD chambers
KR100864258B1 (ko) * 2007-02-27 2008-10-17 (주)지원테크 유리질 제품의 세정 방법 및 유리질 제품의 세정 장치
JP2010239115A (ja) * 2009-03-10 2010-10-21 Hitachi Kokusai Electric Inc 基板処理装置
JP5346904B2 (ja) * 2009-11-27 2013-11-20 東京エレクトロン株式会社 縦型成膜装置およびその使用方法
CN102776488B (zh) * 2011-05-10 2014-08-27 北京北方微电子基地设备工艺研究中心有限责任公司 化学气相沉积反应腔装置及具有其的化学气相沉积设备
JP6124724B2 (ja) * 2013-07-25 2017-05-10 株式会社日立国際電気 クリーニング方法、半導体装置の製造方法、基板処理装置およびプログラム
JP6602699B2 (ja) * 2016-03-14 2019-11-06 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ クリーニング方法、半導体装置の製造方法、基板処理装置およびプログラム
CN113463068B (zh) * 2021-05-31 2023-04-07 上海中欣晶圆半导体科技有限公司 半导体成膜apcvd机台工艺腔体干湿结合的保养方法
US20240145230A1 (en) * 2022-10-28 2024-05-02 Applied Materials, Inc. Semiconductor cleaning using plasma-free precursors

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4749440A (en) * 1985-08-28 1988-06-07 Fsi Corporation Gaseous process and apparatus for removing films from substrates
JP2746448B2 (ja) 1990-02-07 1998-05-06 セントラル硝子株式会社 混合ガス組成物
JP3227522B2 (ja) * 1992-10-20 2001-11-12 株式会社日立製作所 マイクロ波プラズマ処理方法及び装置
US5264396A (en) * 1993-01-14 1993-11-23 Micron Semiconductor, Inc. Method for enhancing nitridation and oxidation growth by introducing pulsed NF3
US5350480A (en) * 1993-07-23 1994-09-27 Aspect International, Inc. Surface cleaning and conditioning using hot neutral gas beam array
JPH0786242A (ja) * 1993-09-10 1995-03-31 Fujitsu Ltd 半導体装置の製造方法
US5439553A (en) * 1994-03-30 1995-08-08 Penn State Research Foundation Controlled etching of oxides via gas phase reactions
US5770263A (en) * 1995-11-08 1998-06-23 Micron Technology, Inc. Method for in situ removal of particulate residues resulting from hydrofluoric acid cleaning treatments
JP3400293B2 (ja) * 1996-05-01 2003-04-28 株式会社東芝 Ｃｖｄ装置及びそのクリーニング方法
US5804259A (en) * 1996-11-07 1998-09-08 Applied Materials, Inc. Method and apparatus for depositing a multilayered low dielectric constant film
US20050188923A1 (en) * 1997-08-11 2005-09-01 Cook Robert C. Substrate carrier for parallel wafer processing reactor
DE19813757C2 (de) * 1998-03-27 2000-12-14 Siemens Ag Verfahren zur Herstellung einer mit Fluor belgten Halbleiteroberfläche
US6383300B1 (en) 1998-11-27 2002-05-07 Tokyo Electron Ltd. Heat treatment apparatus and cleaning method of the same
US6905800B1 (en) * 2000-11-21 2005-06-14 Stephen Yuen Etching a substrate in a process zone
JP2002164335A (ja) 2000-11-27 2002-06-07 Canon Sales Co Inc 半導体製造装置の洗浄方法及び半導体製造装置
AU2002366920A1 (en) * 2001-12-13 2003-07-09 Showa Denko K.K. Cleaning gas composition for semiconductor production equipment and cleaning method using the gas
US6843858B2 (en) * 2002-04-02 2005-01-18 Applied Materials, Inc. Method of cleaning a semiconductor processing chamber
US7361599B2 (en) * 2002-09-03 2008-04-22 Texas Instruments Incorporated Integrated circuit and method
JP2004128281A (ja) * 2002-10-03 2004-04-22 Tokyo Electron Ltd 基板処理方法および基板処理装置
JP3872027B2 (ja) * 2003-03-07 2007-01-24 株式会社東芝 クリーニング方法及び半導体製造装置
JP4430918B2 (ja) * 2003-03-25 2010-03-10 東京エレクトロン株式会社 薄膜形成装置の洗浄方法及び薄膜形成方法
JP3974547B2 (ja) * 2003-03-31 2007-09-12 株式会社東芝 半導体装置および半導体装置の製造方法
US7479454B2 (en) * 2003-09-30 2009-01-20 Tokyo Electron Limited Method and processing system for monitoring status of system components
US20050211264A1 (en) * 2004-03-25 2005-09-29 Tokyo Electron Limited Of Tbs Broadcast Center Method and processing system for plasma-enhanced cleaning of system components
JP4675127B2 (ja) * 2004-04-23 2011-04-20 東京エレクトロン株式会社 薄膜形成装置、薄膜形成装置の洗浄方法及びプログラム
US20060017043A1 (en) * 2004-07-23 2006-01-26 Dingjun Wu Method for enhancing fluorine utilization
US7119032B2 (en) * 2004-08-23 2006-10-10 Air Products And Chemicals, Inc. Method to protect internal components of semiconductor processing equipment using layered superlattice materials
JP2006114780A (ja) * 2004-10-15 2006-04-27 Tokyo Electron Ltd 薄膜形成装置の洗浄方法、薄膜形成装置及びプログラム

Also Published As

Publication number Publication date
JP2005079218A (ja) 2005-03-24
TWI374480B (https=) 2012-10-11
US7520937B2 (en) 2009-04-21
TW200522165A (en) 2005-07-01
KR20050021338A (ko) 2005-03-07
KR100893252B1 (ko) 2009-04-17
US20050066993A1 (en) 2005-03-31

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