JP4265817B1 - 半導体メモリ、それを用いた半導体メモリシステム、および半導体メモリに用いられる量子ドットの製造方法 - Google Patents
半導体メモリ、それを用いた半導体メモリシステム、および半導体メモリに用いられる量子ドットの製造方法 Download PDFInfo
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 219
- 239000004065 semiconductor Substances 0.000 title claims abstract description 179
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000000758 substrate Substances 0.000 claims abstract description 67
- 239000012792 core layer Substances 0.000 claims abstract description 43
- 239000010410 layer Substances 0.000 claims abstract description 41
- 238000007667 floating Methods 0.000 claims abstract description 37
- 238000005253 cladding Methods 0.000 claims abstract description 21
- 239000010408 film Substances 0.000 claims description 118
- 238000003860 storage Methods 0.000 claims description 44
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 43
- 239000010409 thin film Substances 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 29
- 239000002184 metal Substances 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 26
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical class [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 25
- 229910021332 silicide Inorganic materials 0.000 claims description 22
- 239000001257 hydrogen Substances 0.000 claims description 15
- 229910052739 hydrogen Inorganic materials 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 15
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 14
- 150000001875 compounds Chemical class 0.000 claims description 11
- 238000009832 plasma treatment Methods 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 8
- 229910052721 tungsten Inorganic materials 0.000 claims description 8
- 239000010937 tungsten Substances 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 229910052732 germanium Inorganic materials 0.000 claims description 7
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 7
- 238000002347 injection Methods 0.000 claims description 7
- 239000007924 injection Substances 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000002131 composite material Substances 0.000 abstract description 25
- 230000014759 maintenance of location Effects 0.000 abstract description 17
- 230000015654 memory Effects 0.000 description 35
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
- 239000010453 quartz Substances 0.000 description 16
- 238000010586 diagram Methods 0.000 description 14
- 239000013078 crystal Substances 0.000 description 12
- 238000012545 processing Methods 0.000 description 12
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- 239000007789 gas Substances 0.000 description 9
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 9
- 229910021334 nickel silicide Inorganic materials 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
- H01L29/42332—Gate electrodes for transistors with a floating gate with the floating gate formed by two or more non connected parts, e.g. multi-particles flating gate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- H—ELECTRICITY
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
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Abstract
【解決手段】半導体メモリ(110)は、半導体基板(101)上に形成した絶縁膜(105)上に、極薄Si酸化膜により被膜したSiからなる量子ドット(311)を積層し、その上に高誘電率絶縁膜(322)で被膜した量子ドット(321)を積層し、さらに高誘電率絶縁膜(412)で被膜したSiからなる量子ドット(411)を積層した複合フローティング構造を有する。量子ドット(321)は、コア層(3211)と、コア層(3211)を覆うクラッド層(3212)とからなる。そして、コア層(3211)における電子の占有準位は、クラッド層(3212)における電子の占有準位よりも低い。
【選択図】図4
Description
半導体メモリ100,110におけるメモリ書込動作とメモリ消去動作とについて説明する。
図12は、この発明による半導体メモリを用いた半導体メモリシステムの概略図である。図12を参照して、半導体メモリシステム800は、半導体メモリ110と、光源810とを備える。
Claims (13)
- フローティングゲート構造を有する半導体メモリであって、
第1の量子ドットを含み、電子を蓄積する電荷蓄積ノードと、
第2の量子ドットを含み、前記電子の前記電荷蓄積ノードへの注入および前記電荷蓄積ノードからの前記電子の放出を行なう制御ノードとを備え、
前記第1の量子ドットは、コア層と、前記コア層を覆うクラッド層とを含み、
前記コア層における電子の占有準位は、前記クラッド層における電子の占有準位よりも低い、半導体メモリ。 - 前記制御ノードは、第1および第2の制御ノードを含み、
前記電荷蓄積ノードは、前記第1の制御ノードと前記第2の制御ノードとの間に積層される、請求の範囲第1項に記載の半導体メモリ。 - 前記電荷蓄積ノードは、前記第1の量子ドットと、前記第1の量子ドットを覆う第1の被覆材料とからなり、
前記制御ノードは、前記第2の量子ドットと、前記第2の量子ドットを覆う第2の被覆材料とからなり、
前記第1の量子ドットは、前記第2の量子ドットと異なる材料からなり、
前記第1の被覆材料は、前記第2の被覆材料と異なる材料からなる、請求項1または請求の範囲第2項に記載の半導体メモリ。 - 前記第1の量子ドットの前記コア層は、金属と半導体との化合物からなり、
前記第1の量子ドットの前記クラッド層は、半導体からなり、
前記第2の量子ドットは、金属シリサイド量子ドットからなる、請求の範囲第3項に記載の半導体メモリ。 - 前記コア層は、シリコンと金属との金属シリサイドからなり、
前記クラッド層は、シリコンからなる、請求の範囲第4項に記載の半導体メモリ。 - 前記金属は、ニッケルまたはタングステンである、請求の範囲第5項に記載の半導体メモリ。
- 前記コア層は、ゲルマニウムと金属との化合物からなり、
前記クラッド層は、ゲルマニウムからなる、請求の範囲第4項に記載の半導体メモリ。 - 前記金属は、ニッケルまたはタングステンである、請求の範囲第7項に記載の半導体メモリ。
- フローティングゲート構造を有する半導体メモリと、
前記半導体メモリに光を照射する光源とを備え、
前記半導体メモリは、
第1の量子ドットを含み、かつ、電子を蓄積する電荷蓄積ノードと、第2の量子ドットを含み、かつ、前記電子の前記電荷蓄積ノードへの注入および前記電荷蓄積ノードからの前記電子の放出を行なう制御ノードとからなるフローティングゲートと、
前記光源からの光を前記電荷蓄積ノードに導く光透過型のゲート電極とを含み、
前記第1の量子ドットは、コア層と、前記コア層を覆うクラッド層とを含み、
前記コア層における電子の占有準位は、前記クラッド層における電子の占有準位よりも低い、半導体メモリシステム。 - フローティングゲート構造を有する半導体メモリに用いられる量子ドットの製造方法であって、
半導体基板上に酸化膜を形成する第1のステップと、
前記酸化膜上に第1の量子ドットを形成する第2のステップと、
前記第1の量子ドット上に第2の量子ドットを堆積する第3のステップと、
前記第2の量子ドット上に金属薄膜を堆積する第4のステップと、
前記第2の量子ドットおよび前記金属薄膜に対して加熱処理またはリモート水素プラズマ処理を施す第5のステップと、
前記第5のステップで生成された前記第2の量子ドットと前記金属薄膜との化合物上に第3の量子ドットを堆積する第6のステップとを備え、
前記化合物における電子の占有準位は、前記第1および第3の量子ドットにおける電子の占有準位よりも低い、量子ドットの製造方法。 - 前記第5のステップにおいて、前記リモート水素プラズマ処理は、前記半導体基板を電気的にフローティングして行なわれる、請求の範囲第10項に記載の量子ドットの製造方法。
- 前記第4のステップにおいて、前記半導体基板の電子親和力よりも大きい電子親和力を有する金属薄膜が前記第2の量子ドット上に堆積される、請求の範囲第10項に記載の量子ドットの製造方法。
- 前記半導体基板は、シリコンからなり、
前記金属薄膜は、ニッケル薄膜またはタングステン薄膜からなる、請求の範囲第12項に記載の量子ドットの製造方法。
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CN114122117A (zh) * | 2020-08-25 | 2022-03-01 | 爱思开海力士有限公司 | 半导体存储器装置及其制造和操作方法 |
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JP2008288346A (ja) * | 2007-05-16 | 2008-11-27 | Hiroshima Univ | 半導体素子 |
US7981799B2 (en) * | 2007-09-14 | 2011-07-19 | Chungbuk National University Industry-Academic Cooperation Foundation | Room temperature-operating single-electron device and the fabrication method thereof |
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- 2008-03-26 US US12/600,986 patent/US7829935B2/en not_active Expired - Fee Related
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CN114122117A (zh) * | 2020-08-25 | 2022-03-01 | 爱思开海力士有限公司 | 半导体存储器装置及其制造和操作方法 |
US11723206B2 (en) | 2020-08-25 | 2023-08-08 | SK Hynix Inc. | Semiconductor memory device and methods of manufacturing and operating the same |
CN114122117B (zh) * | 2020-08-25 | 2024-03-22 | 爱思开海力士有限公司 | 半导体存储器装置及其制造和操作方法 |
US11943930B2 (en) | 2020-08-25 | 2024-03-26 | SK Hynix Inc. | Semiconductor memory device and methods of manufacturing and operating the same |
Also Published As
Publication number | Publication date |
---|---|
US20100155808A1 (en) | 2010-06-24 |
US7829935B2 (en) | 2010-11-09 |
JPWO2009118783A1 (ja) | 2011-07-21 |
WO2009118783A1 (ja) | 2009-10-01 |
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