JP4264533B2 - 不揮発性磁気メモリ装置及びその製造方法 - Google Patents

不揮発性磁気メモリ装置及びその製造方法 Download PDF

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Publication number
JP4264533B2
JP4264533B2 JP2003000485A JP2003000485A JP4264533B2 JP 4264533 B2 JP4264533 B2 JP 4264533B2 JP 2003000485 A JP2003000485 A JP 2003000485A JP 2003000485 A JP2003000485 A JP 2003000485A JP 4264533 B2 JP4264533 B2 JP 4264533B2
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Japan
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layer
insulating film
wiring
forming
permeable material
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Expired - Fee Related
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JP2003000485A
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English (en)
Japanese (ja)
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JP2004214458A5 (enExample
JP2004214458A (ja
Inventor
真 元吉
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Sony Corp
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Sony Corp
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Priority to JP2003000485A priority Critical patent/JP4264533B2/ja
Priority to US10/751,747 priority patent/US6958503B2/en
Priority to TW093100239A priority patent/TWI255458B/zh
Publication of JP2004214458A publication Critical patent/JP2004214458A/ja
Publication of JP2004214458A5 publication Critical patent/JP2004214458A5/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
JP2003000485A 2003-01-06 2003-01-06 不揮発性磁気メモリ装置及びその製造方法 Expired - Fee Related JP4264533B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2003000485A JP4264533B2 (ja) 2003-01-06 2003-01-06 不揮発性磁気メモリ装置及びその製造方法
US10/751,747 US6958503B2 (en) 2003-01-06 2004-01-05 Nonvolatile magnetic memory device
TW093100239A TWI255458B (en) 2003-01-06 2004-01-06 Nonvolatile magnetic memory device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003000485A JP4264533B2 (ja) 2003-01-06 2003-01-06 不揮発性磁気メモリ装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2004214458A JP2004214458A (ja) 2004-07-29
JP2004214458A5 JP2004214458A5 (enExample) 2005-09-08
JP4264533B2 true JP4264533B2 (ja) 2009-05-20

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ID=32708778

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003000485A Expired - Fee Related JP4264533B2 (ja) 2003-01-06 2003-01-06 不揮発性磁気メモリ装置及びその製造方法

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US (1) US6958503B2 (enExample)
JP (1) JP4264533B2 (enExample)
TW (1) TWI255458B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3906139B2 (ja) * 2002-10-16 2007-04-18 株式会社東芝 磁気ランダムアクセスメモリ
US7397077B2 (en) * 2004-09-02 2008-07-08 Samsung Electronics Co., Ltd. Magnetic memory devices having patterned heater layers therein that utilize thermally conductive sidewall materials to increase heat transfer when writing memory data
KR101124504B1 (ko) * 2005-09-22 2012-03-15 삼성전자주식회사 ＡＬＤ 공정에 의한 비정질 ＮｉＯ 박막의 제조방법 및상기 비정질 ＮｉＯ 박막을 이용한 비휘발성 메모리 소자
US7799637B2 (en) * 2006-06-26 2010-09-21 Sandisk Corporation Scaled dielectric enabled by stack sidewall process
TWI402980B (zh) * 2007-07-20 2013-07-21 Macronix Int Co Ltd 具有緩衝層之電阻式記憶結構
JP5277629B2 (ja) * 2007-12-21 2013-08-28 ソニー株式会社 磁気抵抗効果を有するメモリ素子及びその製造方法、並びに、不揮発性磁気メモリ装置
US7829923B2 (en) * 2008-10-23 2010-11-09 Qualcomm Incorporated Magnetic tunnel junction and method of fabrication
US8796041B2 (en) * 2009-08-28 2014-08-05 International Business Machines Corporation Pillar-based interconnects for magnetoresistive random access memory
JP2012069630A (ja) * 2010-09-22 2012-04-05 Renesas Electronics Corp 半導体装置およびその製造方法
KR101919040B1 (ko) 2012-08-13 2018-11-15 삼성전자주식회사 반도체 기억 소자
JP6053819B2 (ja) * 2012-11-26 2016-12-27 キヤノンアネルバ株式会社 磁気抵抗効果素子の製造方法
JP5865858B2 (ja) * 2013-03-22 2016-02-17 株式会社東芝 磁気抵抗効果素子及び磁気抵抗効果素子の製造方法
US9123879B2 (en) * 2013-09-09 2015-09-01 Masahiko Nakayama Magnetoresistive element and method of manufacturing the same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5940319A (en) * 1998-08-31 1999-08-17 Motorola, Inc. Magnetic random access memory and fabricating method thereof
JP2003086775A (ja) * 2001-09-07 2003-03-20 Canon Inc 磁気メモリ装置およびその製造方法

Also Published As

Publication number Publication date
US6958503B2 (en) 2005-10-25
JP2004214458A (ja) 2004-07-29
TWI255458B (en) 2006-05-21
TW200426825A (en) 2004-12-01
US20040135184A1 (en) 2004-07-15

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