JP4264213B2 - アニールウェーハの製造方法 - Google Patents
アニールウェーハの製造方法 Download PDFInfo
- Publication number
- JP4264213B2 JP4264213B2 JP2001571465A JP2001571465A JP4264213B2 JP 4264213 B2 JP4264213 B2 JP 4264213B2 JP 2001571465 A JP2001571465 A JP 2001571465A JP 2001571465 A JP2001571465 A JP 2001571465A JP 4264213 B2 JP4264213 B2 JP 4264213B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- boron
- annealing
- heat treatment
- cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 57
- 229910052796 boron Inorganic materials 0.000 claims description 57
- 238000000137 annealing Methods 0.000 claims description 35
- 238000010438 heat treatment Methods 0.000 claims description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 12
- 239000007864 aqueous solution Substances 0.000 claims description 11
- 239000012300 argon atmosphere Substances 0.000 claims description 7
- 238000005406 washing Methods 0.000 claims description 7
- 235000012431 wafers Nutrition 0.000 description 83
- 238000004140 cleaning Methods 0.000 description 34
- 238000011109 contamination Methods 0.000 description 18
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 12
- 239000001257 hydrogen Substances 0.000 description 11
- 229910052739 hydrogen Inorganic materials 0.000 description 11
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 6
- 239000002344 surface layer Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000004880 explosion Methods 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 2
- 230000005660 hydrophilic surface Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- -1 polypropylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/906—Cleaning of wafer as interim step
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
SiO2+Si→2SiO
という反応を起こして結果的にSiがエッチングされその部分がピットとして観察されるものである。このピットがウェーハ表面の局所的な面粗さ(マイクロラフネス)及び長周期的な面粗さ(ヘイズ)を悪化させる原因となっている。この様に、Arガスは微量の不純物や、温度むら等の微小な環境の変化に対して敏感なため、扱いが難しいというデメリットが存在する。
(実施例1、2及び比較例1、2)
洗浄水準1: SC1+SC2+SC1+DHF(実施例1)
洗浄水準2: SC1+SC1+DHF(実施例2)
洗浄水準3: SC1+SC2+SC1(比較例1)
洗浄水準4: 洗浄なし(比較例2)
SC1:29重量%のNH4OH水溶液と30重量%のH2O2水溶液と純水とが、容量比1:1:10で混合された溶液を用い80℃で3分の洗浄
SC2:30重量%のHCl水溶液と30重量%のH2O2水溶液と純水とが、容量比1:1:200で混合された溶液を用い、80℃で3分の洗浄
DHF:49重量%のHF水溶液を純水で希釈して1.5重量%にした溶液を用い、室温で3分の洗浄
使用した試料ウェーハは直径150mm、p型、結晶軸<100>であり、ボロン濃度は1.5−2.5×1015(atoms/cm3)、格子間酸素濃度は18ppma〔JEIDA(日本電子工業振興協会)規格〕である。
この実験は洗浄方法を上記した洗浄水準1(SC1+SC2+SC1+DHF)に統一して行なった。使用した試料ウェーハは実施例1と同様である。
この実験も洗浄方法を上記した洗浄水準1(SC1+SC2+SC1+DHF)に統一して行なった。使用した試料ウェーハは実施例1と同様である。
Claims (2)
- シリコンウェーハを洗浄した後、熱処理炉に投入してアルゴン雰囲気下で熱処理を行うアニールウェーハの製造方法において、前記シリコンウェーハ中のボロン濃度が1×10 16 atoms/cm 3 以下であり、前記洗浄の最終の洗浄液をフッ酸を含む水溶液とし、前記洗浄後のシリコンウェーハが熱処理炉に投入されるまでの間にクリーンルーム内の空気と接触している時間を5時間以内とすることを特徴とするアニールウェーハの製造方法。
- 前記熱処理を1050〜1300℃の温度範囲で行うことを特徴とする請求項1記載のアニールウェーハの製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000092155 | 2000-03-29 | ||
PCT/JP2001/002398 WO2001073838A1 (fr) | 2000-03-29 | 2001-03-26 | Procede de production pour une plaquette recuite |
Publications (1)
Publication Number | Publication Date |
---|---|
JP4264213B2 true JP4264213B2 (ja) | 2009-05-13 |
Family
ID=18607527
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001571465A Expired - Fee Related JP4264213B2 (ja) | 2000-03-29 | 2001-03-26 | アニールウェーハの製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6670261B2 (ja) |
EP (1) | EP1189269A4 (ja) |
JP (1) | JP4264213B2 (ja) |
KR (1) | KR100714528B1 (ja) |
CN (1) | CN1363118A (ja) |
TW (1) | TW494496B (ja) |
WO (1) | WO2001073838A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3893608B2 (ja) * | 2000-09-21 | 2007-03-14 | 信越半導体株式会社 | アニールウェーハの製造方法 |
US6743495B2 (en) * | 2001-03-30 | 2004-06-01 | Memc Electronic Materials, Inc. | Thermal annealing process for producing silicon wafers with improved surface characteristics |
KR100432496B1 (ko) | 2002-08-06 | 2004-05-20 | 주식회사 실트론 | 어닐 웨이퍼의 제조 방법 |
JP2004095717A (ja) * | 2002-08-30 | 2004-03-25 | Sumitomo Mitsubishi Silicon Corp | アニールウェーハのボロン汚染消滅方法 |
JP4162211B2 (ja) * | 2002-09-05 | 2008-10-08 | コバレントマテリアル株式会社 | シリコンウエハの洗浄方法および洗浄されたシリコンウエハ |
JP2005333090A (ja) | 2004-05-21 | 2005-12-02 | Sumco Corp | P型シリコンウェーハおよびその熱処理方法 |
CN100437941C (zh) * | 2005-03-21 | 2008-11-26 | 北京有色金属研究总院 | 一种获得洁净区的硅片快速热处理工艺方法及其产品 |
US8153538B1 (en) | 2010-12-09 | 2012-04-10 | Memc Electronic Materials, Inc. | Process for annealing semiconductor wafers with flat dopant depth profiles |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0497517A (ja) * | 1990-08-15 | 1992-03-30 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2723787B2 (ja) * | 1993-08-20 | 1998-03-09 | 信越半導体株式会社 | 結合型基板の製造方法 |
JPH0918008A (ja) * | 1995-07-03 | 1997-01-17 | Mitsubishi Electric Corp | 薄膜トランジスタとその製造方法 |
JPH10144697A (ja) * | 1996-11-06 | 1998-05-29 | Toshiba Ceramics Co Ltd | シリコンウエーハ及びその製造方法 |
US6228166B1 (en) | 1996-11-20 | 2001-05-08 | Nec Corporation | Method for boron contamination reduction in IC fabrication |
JPH11135511A (ja) * | 1997-10-29 | 1999-05-21 | Nippon Steel Corp | シリコン半導体基板及びその製造方法 |
JPH11233476A (ja) * | 1997-12-01 | 1999-08-27 | Mitsubishi Electric Corp | 半導体基板の処理方法 |
JPH11288942A (ja) * | 1998-04-01 | 1999-10-19 | Toshiba Corp | 半導体装置の製造方法 |
JP3478141B2 (ja) * | 1998-09-14 | 2003-12-15 | 信越半導体株式会社 | シリコンウエーハの熱処理方法及びシリコンウエーハ |
-
2001
- 2001-03-26 WO PCT/JP2001/002398 patent/WO2001073838A1/ja active IP Right Grant
- 2001-03-26 KR KR1020017011921A patent/KR100714528B1/ko active IP Right Grant
- 2001-03-26 US US09/979,717 patent/US6670261B2/en not_active Expired - Lifetime
- 2001-03-26 EP EP01915769A patent/EP1189269A4/en not_active Ceased
- 2001-03-26 CN CN01800252A patent/CN1363118A/zh active Pending
- 2001-03-26 JP JP2001571465A patent/JP4264213B2/ja not_active Expired - Fee Related
- 2001-03-28 TW TW090107375A patent/TW494496B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR100714528B1 (ko) | 2007-05-07 |
WO2001073838A1 (fr) | 2001-10-04 |
EP1189269A4 (en) | 2007-04-25 |
EP1189269A1 (en) | 2002-03-20 |
TW494496B (en) | 2002-07-11 |
KR20020019007A (ko) | 2002-03-09 |
US6670261B2 (en) | 2003-12-30 |
US20020160591A1 (en) | 2002-10-31 |
CN1363118A (zh) | 2002-08-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100931196B1 (ko) | 실리콘 웨이퍼 세정 방법 | |
JP3046208B2 (ja) | シリコンウェハおよびシリコン酸化物の洗浄液 | |
Hattori et al. | Contamination Removal by Single‐Wafer Spin Cleaning with Repetitive Use of Ozonized Water and Dilute HF | |
KR100832944B1 (ko) | 어닐 웨이퍼의 제조방법 및 어닐 웨이퍼 | |
JPH06314679A (ja) | 半導体基板の洗浄方法 | |
KR101378519B1 (ko) | 스트레인드 실리콘의 클리닝된 표면들을 준비하기 위한 개선된 공정 | |
JP4264213B2 (ja) | アニールウェーハの製造方法 | |
JP4817887B2 (ja) | 半導体基板の洗浄方法 | |
JP3076202B2 (ja) | Eg用ポリシリコン膜の被着方法 | |
EP1189265A1 (en) | Water for storing silicon wafers and storing method | |
US7199057B2 (en) | Method of eliminating boron contamination in annealed wafer | |
JP4000583B2 (ja) | シリコンウェーハの製造方法 | |
JP2007150196A (ja) | 半導体ウエーハの洗浄方法および製造方法 | |
JP3272823B2 (ja) | 半導体装置の乾式清浄化方法 | |
KR101778368B1 (ko) | 웨이퍼의 세정 방법 | |
JP4753656B2 (ja) | シリコンウエーハ表面へのボロン汚染抑制方法 | |
JP2843946B2 (ja) | シリコン基板表面の清浄化方法 | |
JPH0831781A (ja) | 洗浄薬液 | |
JP4029378B2 (ja) | アニールウェーハの製造方法 | |
JP2001284309A (ja) | 容器の処理方法 | |
JPH0691061B2 (ja) | シリコンウエハの洗浄方法 | |
JP2000031105A (ja) | シリコンウェーハの洗浄方法 | |
JP2505273B2 (ja) | シリコンウエ―ハのドナ―キラ―熱処理方法 | |
JPH07273076A (ja) | 半導体ウエーハの洗浄方法 | |
JPH09260328A (ja) | シリコンウエーハ表面の処理方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20050628 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20050803 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20060123 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20090216 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120220 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4264213 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120220 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130220 Year of fee payment: 4 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140220 Year of fee payment: 5 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |