JP4262031B2 - 露光装置及びデバイスの製造方法 - Google Patents

露光装置及びデバイスの製造方法 Download PDF

Info

Publication number
JP4262031B2
JP4262031B2 JP2003295566A JP2003295566A JP4262031B2 JP 4262031 B2 JP4262031 B2 JP 4262031B2 JP 2003295566 A JP2003295566 A JP 2003295566A JP 2003295566 A JP2003295566 A JP 2003295566A JP 4262031 B2 JP4262031 B2 JP 4262031B2
Authority
JP
Japan
Prior art keywords
wafer
exposure
reticle
cooling
mirror
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003295566A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005064391A (ja
JP2005064391A5 (https=
Inventor
隆行 長谷川
明 三宅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2003295566A priority Critical patent/JP4262031B2/ja
Publication of JP2005064391A publication Critical patent/JP2005064391A/ja
Publication of JP2005064391A5 publication Critical patent/JP2005064391A5/ja
Application granted granted Critical
Publication of JP4262031B2 publication Critical patent/JP4262031B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2003295566A 2003-08-19 2003-08-19 露光装置及びデバイスの製造方法 Expired - Fee Related JP4262031B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003295566A JP4262031B2 (ja) 2003-08-19 2003-08-19 露光装置及びデバイスの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003295566A JP4262031B2 (ja) 2003-08-19 2003-08-19 露光装置及びデバイスの製造方法

Publications (3)

Publication Number Publication Date
JP2005064391A JP2005064391A (ja) 2005-03-10
JP2005064391A5 JP2005064391A5 (https=) 2006-09-21
JP4262031B2 true JP4262031B2 (ja) 2009-05-13

Family

ID=34371768

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003295566A Expired - Fee Related JP4262031B2 (ja) 2003-08-19 2003-08-19 露光装置及びデバイスの製造方法

Country Status (1)

Country Link
JP (1) JP4262031B2 (https=)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170018113A (ko) 2003-04-09 2017-02-15 가부시키가이샤 니콘 노광 방법 및 장치, 그리고 디바이스 제조 방법
TW201834020A (zh) 2003-10-28 2018-09-16 日商尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造方法
TW201809801A (zh) 2003-11-20 2018-03-16 日商尼康股份有限公司 光學照明裝置、曝光裝置、曝光方法、以及元件製造方法
TWI389174B (zh) 2004-02-06 2013-03-11 尼康股份有限公司 偏光變換元件、光學照明裝置、曝光裝置以及曝光方法
EP2660854B1 (en) 2005-05-12 2017-06-21 Nikon Corporation Projection optical system, exposure apparatus and exposure method
JP2007027632A (ja) * 2005-07-21 2007-02-01 Nikon Corp 光学装置及び露光装置、並びにデバイス製造方法
JPWO2007122856A1 (ja) * 2006-04-24 2009-09-03 株式会社ニコン 光学素子冷却装置および露光装置
JP2008292761A (ja) * 2007-05-24 2008-12-04 Canon Inc 露光装置及びデバイス製造方法
US20090015806A1 (en) * 2007-06-04 2009-01-15 Nikon Corporation Environmental control apparatus, stage apparatus, exposure apparatus and device manufacturing method
JP5267029B2 (ja) 2007-10-12 2013-08-21 株式会社ニコン 照明光学装置、露光装置及びデバイスの製造方法
US8379187B2 (en) 2007-10-24 2013-02-19 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9116346B2 (en) 2007-11-06 2015-08-25 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
NL2004322A (en) 2009-04-13 2010-10-14 Asml Netherlands Bv Cooling device, cooling arrangement and lithographic apparatus comprising a cooling arrangement.
NL2004242A (en) 2009-04-13 2010-10-14 Asml Netherlands Bv Detector module, cooling arrangement and lithographic apparatus comprising a detector module.
JP4977751B2 (ja) * 2009-12-24 2012-07-18 シャープ株式会社 画像形成装置
WO2012013751A1 (en) * 2010-07-30 2012-02-02 Carl Zeiss Smt Gmbh Euv exposure apparatus
DE102011081259A1 (de) 2010-09-28 2012-03-29 Carl Zeiss Smt Gmbh Anordnung zur Spiegeltemperaturmessung und/oder zur thermischen Aktuierung eines Spiegels in einer mikrolithographischen Projektionsbelichtungsanlage
DE102011010462A1 (de) 2011-01-28 2012-08-02 Carl Zeiss Laser Optics Gmbh Optische Anordnung für eine EUV-Projektionsbelichtungsanlage sowie Verfahren zum Kühlen eines optischen Bauelements
WO2013041134A1 (en) 2011-09-21 2013-03-28 Carl Zeiss Smt Gmbh Arrangement for thermal actuation of a mirror in a microlithographic projection exposure apparatus
US10691013B2 (en) 2013-12-22 2020-06-23 Applied Materials, Inc. Extreme ultraviolet lithography system having chuck assembly and method of manufacturing thereof
JP2017156465A (ja) * 2016-02-29 2017-09-07 キヤノン株式会社 駆動装置、リソグラフィ装置、冷却方法、および物品の製造方法
US11720034B2 (en) 2017-04-11 2023-08-08 Asml Netherlands B.V. Lithographic apparatus and cooling method
US20230123834A1 (en) * 2021-10-19 2023-04-20 Meta Platforms Technologies, Llc Euv lithography using polymer crystal based reticle

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2840315B2 (ja) * 1989-09-04 1998-12-24 キヤノン株式会社 露光方法
JP2928603B2 (ja) * 1990-07-30 1999-08-03 キヤノン株式会社 Ｘ線露光装置用ウエハ冷却装置
JP2975089B2 (ja) * 1990-11-01 1999-11-10 キヤノン株式会社 露光装置
JPH10125592A (ja) * 1996-10-21 1998-05-15 Nikon Corp 温度制御装置及びその方法
JPH11243052A (ja) * 1997-11-14 1999-09-07 Nikon Corp 露光装置
JP2000048750A (ja) * 1998-07-28 2000-02-18 Nikon Corp 荷電粒子線偏向器及びそれを内蔵する電磁レンズ
JP2000243684A (ja) * 1999-02-18 2000-09-08 Canon Inc 露光装置およびデバイス製造方法
JP2001013297A (ja) * 1999-06-30 2001-01-19 Nikon Corp 反射光学素子および露光装置
JP2003068600A (ja) * 2001-08-22 2003-03-07 Canon Inc 露光装置、および基板チャックの冷却方法
JP2003068626A (ja) * 2001-08-29 2003-03-07 Canon Inc 露光装置内ユニットの輻射冷却方法及び輻射冷却装置

Also Published As

Publication number Publication date
JP2005064391A (ja) 2005-03-10

Similar Documents

Publication Publication Date Title
JP4262031B2 (ja) 露光装置及びデバイスの製造方法
US6406820B1 (en) Exposure method for a projection optical system
US7212274B2 (en) Cooling system, exposure apparatus having the same, and device manufacturing method
JP5472331B2 (ja) パターン形成方法及びパターン形成装置、並びにデバイス製造方法
USRE49066E1 (en) Chucks and clamps for holding objects of a lithographic apparatus and methods for controlling a temperature of an object held by a clamp of a lithographic apparatus
WO1999026278A1 (en) Exposure apparatus and method of manufacturing the same, and exposure method
JP4307130B2 (ja) 露光装置
JP2000286189A (ja) 露光装置および露光方法ならびにデバイス製造方法
JP2008270802A (ja) 光学装置、多層膜反射鏡、露光装置、及びデバイス製造方法
US20090103063A1 (en) Cooling apparatus for optical member, barrel, exposure apparatus, and device manufacturing method
JPWO2008041575A1 (ja) ステージ装置および露光装置
JPH11219900A (ja) 露光装置及び露光方法
JP4458323B2 (ja) 保持装置、当該保持装置を有する露光装置、及びデバイス製造方法
JP2006216733A (ja) 露光装置、光学素子の製造方法及びデバイス製造方法
JP2007005362A (ja) 液浸露光装置
JP2000286191A (ja) 露光装置および露光方法ならびにデバイス製造方法
JP2005276932A (ja) 露光装置及びデバイス製造方法
JP4018564B2 (ja) 光学系、及びそれを用いた露光装置、デバイスの製造方法
JP2004158610A (ja) 露光装置および露光方法
JP2006261607A (ja) 液浸露光装置、液浸露光方法及びデバイス製造方法。
JP4572539B2 (ja) 露光装置及び露光方法、デバイス製造方法
JP2004273926A (ja) 露光装置
JP4577307B2 (ja) 光学素子、投影光学系及び露光装置
JP2007123332A (ja) ステージ装置、露光装置、デバイスの製造方法
JP2006073905A (ja) 光学系及び当該光学系の調整方法、露光装置、並びにデバイス製造方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060803

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060803

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20081104

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20081111

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090113

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20090203

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20090206

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120220

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130220

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140220

Year of fee payment: 5

LAPS Cancellation because of no payment of annual fees