JP4253245B2 - 薄膜トランジスタの製造方法 - Google Patents

薄膜トランジスタの製造方法 Download PDF

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Publication number
JP4253245B2
JP4253245B2 JP2003405622A JP2003405622A JP4253245B2 JP 4253245 B2 JP4253245 B2 JP 4253245B2 JP 2003405622 A JP2003405622 A JP 2003405622A JP 2003405622 A JP2003405622 A JP 2003405622A JP 4253245 B2 JP4253245 B2 JP 4253245B2
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Japan
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region
doping
ldd
impurity concentration
thin film
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Expired - Fee Related
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JP2003405622A
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Japanese (ja)
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JP2005167057A5 (cg-RX-API-DMAC7.html
JP2005167057A (ja
Inventor
悦子 浅野
達也 荒尾
拓哉 松尾
昌則 享保
英人 北角
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Semiconductor Energy Laboratory Co Ltd
Sharp Corp
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Semiconductor Energy Laboratory Co Ltd
Sharp Corp
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Priority to JP2003405622A priority Critical patent/JP4253245B2/ja
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Publication of JP2005167057A5 publication Critical patent/JP2005167057A5/ja
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Publication of JP4253245B2 publication Critical patent/JP4253245B2/ja
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  • Thin Film Transistor (AREA)
JP2003405622A 2003-12-04 2003-12-04 薄膜トランジスタの製造方法 Expired - Fee Related JP4253245B2 (ja)

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JP2003405622A JP4253245B2 (ja) 2003-12-04 2003-12-04 薄膜トランジスタの製造方法

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JP2003405622A JP4253245B2 (ja) 2003-12-04 2003-12-04 薄膜トランジスタの製造方法

Publications (3)

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JP2005167057A JP2005167057A (ja) 2005-06-23
JP2005167057A5 JP2005167057A5 (cg-RX-API-DMAC7.html) 2006-04-06
JP4253245B2 true JP4253245B2 (ja) 2009-04-08

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007142082A (ja) * 2005-11-17 2007-06-07 Hitachi Displays Ltd 表示装置およびその製造方法
JP5196470B2 (ja) * 2007-07-31 2013-05-15 独立行政法人産業技術総合研究所 二重絶縁ゲート電界効果トランジスタ

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JP2005167057A (ja) 2005-06-23

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