JP2005167057A5 - - Google Patents

Download PDF

Info

Publication number
JP2005167057A5
JP2005167057A5 JP2003405622A JP2003405622A JP2005167057A5 JP 2005167057 A5 JP2005167057 A5 JP 2005167057A5 JP 2003405622 A JP2003405622 A JP 2003405622A JP 2003405622 A JP2003405622 A JP 2003405622A JP 2005167057 A5 JP2005167057 A5 JP 2005167057A5
Authority
JP
Japan
Prior art keywords
region
doped
thin film
film transistor
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003405622A
Other languages
English (en)
Japanese (ja)
Other versions
JP4253245B2 (ja
JP2005167057A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2003405622A priority Critical patent/JP4253245B2/ja
Priority claimed from JP2003405622A external-priority patent/JP4253245B2/ja
Publication of JP2005167057A publication Critical patent/JP2005167057A/ja
Publication of JP2005167057A5 publication Critical patent/JP2005167057A5/ja
Application granted granted Critical
Publication of JP4253245B2 publication Critical patent/JP4253245B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2003405622A 2003-12-04 2003-12-04 薄膜トランジスタの製造方法 Expired - Fee Related JP4253245B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003405622A JP4253245B2 (ja) 2003-12-04 2003-12-04 薄膜トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003405622A JP4253245B2 (ja) 2003-12-04 2003-12-04 薄膜トランジスタの製造方法

Publications (3)

Publication Number Publication Date
JP2005167057A JP2005167057A (ja) 2005-06-23
JP2005167057A5 true JP2005167057A5 (cg-RX-API-DMAC7.html) 2006-04-06
JP4253245B2 JP4253245B2 (ja) 2009-04-08

Family

ID=34728240

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003405622A Expired - Fee Related JP4253245B2 (ja) 2003-12-04 2003-12-04 薄膜トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JP4253245B2 (cg-RX-API-DMAC7.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007142082A (ja) * 2005-11-17 2007-06-07 Hitachi Displays Ltd 表示装置およびその製造方法
JP5196470B2 (ja) * 2007-07-31 2013-05-15 独立行政法人産業技術総合研究所 二重絶縁ゲート電界効果トランジスタ

Similar Documents

Publication Publication Date Title
TW200644224A (en) Semiconductor device and method for manufacturing the same
WO2003058723A1 (fr) Transistor a film mince organique et son procede de fabrication
EP1487023A3 (en) Semiconductor device comprising a MIS transistor and method for manufacturing the same
EP1548831A4 (en) SEMICONDUCTOR MEMBER COMPONENT AND METHOD FOR THE PRODUCTION THEREOF
WO2009011084A1 (ja) 薄膜トランジスタを備えた半導体装置およびその製造方法
TW200500702A (en) Thin film transistor array panel and manufacturing method thereof
TW200509374A (en) Semiconductor device and manufacturing method thereof
TW200721494A (en) Method of manufacturing semiconductor device
TW200703570A (en) Semionductor device having cell transistor with recess channel structure and method of manufacturing the same
EP1508921A3 (en) Gate shorted to body thin film transistor, manufacturing method thereof and display including the same
TW200717777A (en) Semiconductor memory device and manufacturing method thereof
EP1873838A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
TW200715563A (en) Semiconductor device and method for manufacturing the same
JP2005167057A5 (cg-RX-API-DMAC7.html)
SG139541A1 (en) Thyristor-based sram and method using quasi-planar finfet process for fabrication thereof
JP2005079299A5 (cg-RX-API-DMAC7.html)
DE602008006579D1 (de) Herstellungsverfahren eines Leistungshalbleiterbauelements
WO2009031377A1 (ja) 二重自己整合プロセスによる多重チャネル自己整合トランジスタ及びその製造方法
EP1594166A3 (en) Semiconductor device and method for fabricating the same
TW200719413A (en) Semiconductor device and fabricating method thereof
JP2008198647A5 (cg-RX-API-DMAC7.html)
TW200629557A (en) Semiconductor device and fabricating method for thereof
TW200608467A (en) Method for fabricating semiconductor device
WO2003075345A3 (en) Raised extension structure for high performance cmos
JP2004063717A5 (cg-RX-API-DMAC7.html)