WO2009031377A1 - 二重自己整合プロセスによる多重チャネル自己整合トランジスタ及びその製造方法 - Google Patents

二重自己整合プロセスによる多重チャネル自己整合トランジスタ及びその製造方法 Download PDF

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WO2009031377A1
WO2009031377A1 PCT/JP2008/063887 JP2008063887W WO2009031377A1 WO 2009031377 A1 WO2009031377 A1 WO 2009031377A1 JP 2008063887 W JP2008063887 W JP 2008063887W WO 2009031377 A1 WO2009031377 A1 WO 2009031377A1
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Prior art keywords
alignment
self
comb
transistor fabricated
manufacturing
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PCT/JP2008/063887
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English (en)
French (fr)
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Hiroyuki Okada
Shigeki Naka
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National University Corporation University Of Toyama
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Priority to JP2009531164A priority Critical patent/JP5403614B2/ja
Publication of WO2009031377A1 publication Critical patent/WO2009031377A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/491—Vertical transistors, e.g. vertical carbon nanotube field effect transistors [CNT-FETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
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    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
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    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
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    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/114—Poly-phenylenevinylene; Derivatives thereof
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
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    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Thin Film Transistor (AREA)

Abstract

　二度の背面露光を用いることで、ゲート、ドレイン及びソース電極の位置を順次決定し、櫛形ゲート電極を用いた縦形構造でマルチ・短チャネル化を図ることができる二重自己整合プロセスによる多重チャネル自己整合トランジスタとその製造方法を提供する。 　二重自己整合プロセスによる多重チャネル自己整合トランジスタにおいて、基板（１０）上に櫛形に加工された不透明ゲート電極（１１）と、その上に積層された絶縁膜（２１）と、前記櫛形に加工された不透明ゲート電極（１１）との間に、前記基板（１０）側からの１回目の背面露光によって形成される透明ドレイン電極（１２）と、その上に積層される絶縁膜（２１ａ）と前記櫛形に加工された不透明ゲート電極（１１）の上方に前記基板（１０）側からの２回目の背面露光によって形成される透明ソース電極（１３）と、その上に積層される半導体（３１）を有する。
PCT/JP2008/063887 2007-09-03 2008-08-01 二重自己整合プロセスによる多重チャネル自己整合トランジスタ及びその製造方法 WO2009031377A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009531164A JP5403614B2 (ja) 2007-09-03 2008-08-01 二重自己整合プロセスによる多重チャネル自己整合トランジスタ及びその製造方法

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JP2007228080 2007-09-03
JP2007-228080 2007-09-03

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WO2009031377A1 true WO2009031377A1 (ja) 2009-03-12

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013062533A (ja) * 2009-11-27 2013-04-04 Semiconductor Energy Lab Co Ltd 非線形素子
US8916869B2 (en) 2009-11-06 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including an oxide semiconductor layer
US9425226B2 (en) 2014-03-13 2016-08-23 Semiconductor Energy Laboratory Co., Ltd. Imaging device
US9905598B2 (en) 2014-04-23 2018-02-27 Semiconductor Energy Laboratory Co., Ltd. Imaging device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01152763A (ja) * 1987-09-09 1989-06-15 Natl Res Dev Corp 半導体装置の製造方法
JP2004349292A (ja) * 2003-05-20 2004-12-09 Sony Corp 電界効果型トランジスタ及びその製造方法
JP2005019446A (ja) * 2003-06-23 2005-01-20 Sharp Corp 電界効果トランジスタおよびその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01152763A (ja) * 1987-09-09 1989-06-15 Natl Res Dev Corp 半導体装置の製造方法
JP2004349292A (ja) * 2003-05-20 2004-12-09 Sony Corp 電界効果型トランジスタ及びその製造方法
JP2005019446A (ja) * 2003-06-23 2005-01-20 Sharp Corp 電界効果トランジスタおよびその製造方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8916869B2 (en) 2009-11-06 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including an oxide semiconductor layer
US9331112B2 (en) 2009-11-06 2016-05-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including an oxide semiconductor layer
US9773814B2 (en) 2009-11-06 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2013062533A (ja) * 2009-11-27 2013-04-04 Semiconductor Energy Lab Co Ltd 非線形素子
US9425226B2 (en) 2014-03-13 2016-08-23 Semiconductor Energy Laboratory Co., Ltd. Imaging device
US9711549B2 (en) 2014-03-13 2017-07-18 Semiconductor Energy Laboratory Co., Ltd. Imaging device
US9905598B2 (en) 2014-04-23 2018-02-27 Semiconductor Energy Laboratory Co., Ltd. Imaging device

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JP5403614B2 (ja) 2014-01-29
JPWO2009031377A1 (ja) 2010-12-09

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