JP2005079299A5 - - Google Patents
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- Publication number
- JP2005079299A5 JP2005079299A5 JP2003307074A JP2003307074A JP2005079299A5 JP 2005079299 A5 JP2005079299 A5 JP 2005079299A5 JP 2003307074 A JP2003307074 A JP 2003307074A JP 2003307074 A JP2003307074 A JP 2003307074A JP 2005079299 A5 JP2005079299 A5 JP 2005079299A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- semiconductor
- type
- semiconductor region
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 49
- 239000012535 impurity Substances 0.000 claims 25
- 238000004519 manufacturing process Methods 0.000 claims 10
- 238000000034 method Methods 0.000 claims 10
- 239000000243 solution Substances 0.000 claims 10
- 238000007599 discharging Methods 0.000 claims 9
- 239000000758 substrate Substances 0.000 claims 5
- 238000005530 etching Methods 0.000 claims 4
- 230000001678 irradiating effect Effects 0.000 claims 4
- 230000001681 protective effect Effects 0.000 claims 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- 239000007864 aqueous solution Substances 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003307074A JP4409231B2 (ja) | 2003-08-29 | 2003-08-29 | 半導体装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003307074A JP4409231B2 (ja) | 2003-08-29 | 2003-08-29 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005079299A JP2005079299A (ja) | 2005-03-24 |
| JP2005079299A5 true JP2005079299A5 (cg-RX-API-DMAC7.html) | 2006-09-14 |
| JP4409231B2 JP4409231B2 (ja) | 2010-02-03 |
Family
ID=34409980
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003307074A Expired - Fee Related JP4409231B2 (ja) | 2003-08-29 | 2003-08-29 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4409231B2 (cg-RX-API-DMAC7.html) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI357157B (en) * | 2006-06-12 | 2012-01-21 | Kovio Inc | Printed, self-aligned, top-gate thin film transist |
| EP1890322A3 (en) * | 2006-08-15 | 2012-02-15 | Kovio, Inc. | Printed dopant layers |
| CN105793960B (zh) | 2014-06-12 | 2018-09-11 | 富士电机株式会社 | 杂质添加装置、杂质添加方法以及半导体元件的制造方法 |
| JP6439297B2 (ja) * | 2014-07-04 | 2018-12-19 | 富士電機株式会社 | 不純物導入方法、不純物導入装置及び半導体素子の製造方法 |
| JPWO2016151723A1 (ja) | 2015-03-23 | 2018-01-11 | 国立大学法人九州大学 | レーザドーピング装置及びレーザドーピング方法 |
| JP6468041B2 (ja) | 2015-04-13 | 2019-02-13 | 富士電機株式会社 | 不純物導入装置、不純物導入方法及び半導体素子の製造方法 |
| JPWO2017163356A1 (ja) | 2016-03-24 | 2019-01-31 | 国立大学法人九州大学 | レーザドーピング装置及び半導体装置の製造方法 |
| CN107636839B (zh) * | 2016-07-25 | 2020-12-04 | 京东方科技集团股份有限公司 | 多晶硅薄膜晶体管及其制造方法、显示装置 |
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2003
- 2003-08-29 JP JP2003307074A patent/JP4409231B2/ja not_active Expired - Fee Related