JP4239343B2 - 酸化物の結晶成長方法、電界効果トランジスタの製造方法および強誘電体不揮発性メモリの製造方法 - Google Patents

酸化物の結晶成長方法、電界効果トランジスタの製造方法および強誘電体不揮発性メモリの製造方法 Download PDF

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JP4239343B2
JP4239343B2 JP2000027362A JP2000027362A JP4239343B2 JP 4239343 B2 JP4239343 B2 JP 4239343B2 JP 2000027362 A JP2000027362 A JP 2000027362A JP 2000027362 A JP2000027362 A JP 2000027362A JP 4239343 B2 JP4239343 B2 JP 4239343B2
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cerium oxide
silicon substrate
oxide
cerium
film
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JP2000344599A5 (enExample
JP2000344599A (ja
Inventor
隆明 網
祐一 石田
直美 長沢
真之 鈴木
暁夫 町田
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Sony Corp
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Sony Corp
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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2000027362A 1999-03-26 2000-01-31 酸化物の結晶成長方法、電界効果トランジスタの製造方法および強誘電体不揮発性メモリの製造方法 Expired - Fee Related JP4239343B2 (ja)

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JP2000027362A JP4239343B2 (ja) 1999-03-26 2000-01-31 酸化物の結晶成長方法、電界効果トランジスタの製造方法および強誘電体不揮発性メモリの製造方法

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JP8491999 1999-03-26
JP11-84919 1999-03-26
JP2000027362A JP4239343B2 (ja) 1999-03-26 2000-01-31 酸化物の結晶成長方法、電界効果トランジスタの製造方法および強誘電体不揮発性メモリの製造方法

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JP2000344599A5 JP2000344599A5 (enExample) 2006-02-16
JP4239343B2 true JP4239343B2 (ja) 2009-03-18

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8099635B2 (en) 2007-03-21 2012-01-17 Arm Limited Techniques for generating a trace stream for a data processing apparatus

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3470068B2 (ja) 1999-09-01 2003-11-25 松下電器産業株式会社 誘電体膜の形成方法
US6569240B1 (en) 1999-03-17 2003-05-27 Matsushita Electric Industrial Co., Ltd. Dielectric film and method for forming the same
JP5029539B2 (ja) * 2007-09-04 2012-09-19 三菱マテリアル株式会社 多結晶シリコンの洗浄方法及び多結晶シリコンの製造方法
JP5262068B2 (ja) * 2007-11-01 2013-08-14 富士ゼロックス株式会社 画像形成装置
JP2009224403A (ja) * 2008-03-13 2009-10-01 Toshiba Corp 情報記録素子及びそれを備えた情報記録再生装置
JP2010212391A (ja) * 2009-03-10 2010-09-24 Hitachi Kokusai Electric Inc 半導体装置の製造方法及び基板処理装置
AU2019459231A1 (en) * 2019-07-29 2022-01-06 Microsoft Technology Licensing Llc Fabrication method for semiconductor nanowires coupled to a superconductor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8099635B2 (en) 2007-03-21 2012-01-17 Arm Limited Techniques for generating a trace stream for a data processing apparatus

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