JP4236005B2 - 実装ノズルのクリーニング方法及びその装置、実装機 - Google Patents
実装ノズルのクリーニング方法及びその装置、実装機 Download PDFInfo
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- JP4236005B2 JP4236005B2 JP2005148930A JP2005148930A JP4236005B2 JP 4236005 B2 JP4236005 B2 JP 4236005B2 JP 2005148930 A JP2005148930 A JP 2005148930A JP 2005148930 A JP2005148930 A JP 2005148930A JP 4236005 B2 JP4236005 B2 JP 4236005B2
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- mounting
- polishing
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- suction surface
- cleaning
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- 238000004140 cleaning Methods 0.000 title claims description 66
- 238000000034 method Methods 0.000 title claims description 13
- 238000005498 polishing Methods 0.000 claims description 77
- 239000000919 ceramic Substances 0.000 claims description 33
- 239000002245 particle Substances 0.000 claims description 21
- 238000001179 sorption measurement Methods 0.000 claims description 8
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 2
- 239000000428 dust Substances 0.000 description 17
- 230000003746 surface roughness Effects 0.000 description 17
- 239000006061 abrasive grain Substances 0.000 description 6
- 238000007517 polishing process Methods 0.000 description 5
- 239000003292 glue Substances 0.000 description 4
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- B08B1/30—
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B19/00—Single-purpose machines or devices for particular grinding operations not covered by any other main group
- B24B19/16—Single-purpose machines or devices for particular grinding operations not covered by any other main group for grinding sharp-pointed workpieces, e.g. needles, pens, fish hooks, tweezers or record player styli
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01024—Chromium [Cr]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/53—Means to assemble or disassemble
- Y10T29/5313—Means to assemble electrical device
- Y10T29/53174—Means to fasten electrical component to wiring board, base, or substrate
- Y10T29/53178—Chip component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/53—Means to assemble or disassemble
- Y10T29/5313—Means to assemble electrical device
- Y10T29/53191—Means to apply vacuum directly to position or hold work part
Description
本明細書中において、実装ノズルとは、真空源に連通する吸引口が備けられ、吸引口から真空引きすることで加工対象物を吸引保持する部材を意味し、取り上げ部に用いられる取り上げノズルや、実装部に用いられる実装ノズル等を含む。
また、本明細書中の粒度は、ISO(世界標準規格)6344−1:1998に準じたJIS(日本工業規格)R 6010:2000に準拠した数値で記載されている。
上記グラフからわかるように、粒度がP1,000のアルミセラミックスを使用した場合には、10秒前後で実装ノズルの吸着面の面粗度が下限であるP800を超え、定常状態に入っている。また、粒度がP5,000のセラミックス構造体を使用した場合には、30秒前後で実装ノズルの面粗度がP5,000近傍に到達し定常状態となっている。よって、P1,000〜P5,000の範囲内の粒度を有するアルミセラミックスを使用すれば、研磨時間30秒前後でほぼ所定の面粗度を備える吸着面のクリーニングを行えることがわかる。
201 部品取り上げ部
203 第1基台
205 ウエハテーブル
213 取り上げノズル
301 実装部
309 実装ノズル
309a 吸着面
313 吸引口
501 クリーニング部
503 クリーニングユニット本体部
505 研磨部材
513 研磨ステージ
Claims (4)
- 電子部品実装機に使用されるクリーニング装置であって、前記電子部品実装機は、電子部品を回路基板に実装するための実装ノズルを備え、前記実装ノズルの先端部には電子部品を吸着保持する吸着面が設けられ、前記クリーニング装置は、
前記実装ノズルの前記吸着面を擦るための研磨手段と、
前記研磨手段を所定の方向に移動させるための駆動手段と、を備え、
前記研磨手段は、セラミックス構造体からなり、前記実装ノズルの吸着面と接触する前記研磨手段の接触面の粒度がP1,000〜P5,000(JIS R6010:2000)の範囲内であることを特徴とするクリーニング装置。 - 前記セラミックス構造体は、アルミナセラミックス、ジルコニアセラミックス、窒化珪素セラミックス、炭化珪素セラミックスの何れかであることを特徴とする請求項1に記載のクリーニング装置。
- 請求項1又は2に記載のクリーニング装置を有する電子部品実装機。
- 電子チップ部品を回路基板等に実装する際に吸着保持するために使用される実装ノズルをクリーニングする方法であって、
粒度がP1,000〜P5,000(JIS R6010:2000)のセラミックス構造体からなる研磨部材に前記実装ノズルの吸着面を押し当てる工程と、
前記吸着面が前記研磨部材に押し当てられた状態で、前記研磨部材を前記吸着面に対して平行に相対移動させて前記吸着面を研磨する工程を備えるクリーニング方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005148930A JP4236005B2 (ja) | 2004-05-28 | 2005-05-23 | 実装ノズルのクリーニング方法及びその装置、実装機 |
KR1020050044716A KR100623108B1 (ko) | 2004-05-28 | 2005-05-27 | 장착 노즐을 세척하기 위한 방법 및 장치와 장착 기계 |
US11/138,302 US20050272351A1 (en) | 2004-05-28 | 2005-05-27 | Method and apparatus for cleaning mounting nozzle, and mounting machine |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004159195 | 2004-05-28 | ||
JP2005148930A JP4236005B2 (ja) | 2004-05-28 | 2005-05-23 | 実装ノズルのクリーニング方法及びその装置、実装機 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006013466A JP2006013466A (ja) | 2006-01-12 |
JP4236005B2 true JP4236005B2 (ja) | 2009-03-11 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005148930A Active JP4236005B2 (ja) | 2004-05-28 | 2005-05-23 | 実装ノズルのクリーニング方法及びその装置、実装機 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20050272351A1 (ja) |
JP (1) | JP4236005B2 (ja) |
KR (1) | KR100623108B1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8327861B2 (en) * | 2006-12-19 | 2012-12-11 | Lam Research Corporation | Megasonic precision cleaning of semiconductor process equipment components and parts |
KR102156741B1 (ko) * | 2013-12-27 | 2020-09-16 | 세메스 주식회사 | 기판처리장치 |
CN105252382B (zh) * | 2015-09-22 | 2018-02-06 | 东莞市金午宏业机械设备有限公司 | 全自动磨针倒角抛光一体机 |
CN106345717A (zh) * | 2016-11-02 | 2017-01-25 | 苏州恒享元电子科技有限公司 | 一种自动除胶机 |
CN109817532B (zh) * | 2019-03-28 | 2020-12-15 | 惠州西文思技术股份有限公司 | 一种用于芯片的加工设备 |
CN117047616B (zh) * | 2023-10-09 | 2023-12-08 | 内蒙金属材料研究所 | 一种基于稀土高强高韧钢加工的定位打磨设备 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3347295B2 (ja) * | 1998-09-09 | 2002-11-20 | 松下電器産業株式会社 | 部品実装ツールとそれによる部品実装方法および装置 |
-
2005
- 2005-05-23 JP JP2005148930A patent/JP4236005B2/ja active Active
- 2005-05-27 KR KR1020050044716A patent/KR100623108B1/ko active IP Right Grant
- 2005-05-27 US US11/138,302 patent/US20050272351A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JP2006013466A (ja) | 2006-01-12 |
US20050272351A1 (en) | 2005-12-08 |
KR100623108B1 (ko) | 2006-09-19 |
KR20060049463A (ko) | 2006-05-19 |
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