JP4215713B2 - 光投射装置 - Google Patents
光投射装置 Download PDFInfo
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- JP4215713B2 JP4215713B2 JP2004372593A JP2004372593A JP4215713B2 JP 4215713 B2 JP4215713 B2 JP 4215713B2 JP 2004372593 A JP2004372593 A JP 2004372593A JP 2004372593 A JP2004372593 A JP 2004372593A JP 4215713 B2 JP4215713 B2 JP 4215713B2
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- 239000007788 liquid Substances 0.000 claims description 40
- 230000003287 optical effect Effects 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 230000007246 mechanism Effects 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 3
- 229920000570 polyether Polymers 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims 1
- CNQCVBJFEGMYDW-UHFFFAOYSA-N lawrencium atom Chemical compound [Lr] CNQCVBJFEGMYDW-UHFFFAOYSA-N 0.000 description 48
- 238000000206 photolithography Methods 0.000 description 28
- 238000000034 method Methods 0.000 description 23
- 230000008569 process Effects 0.000 description 17
- 238000007654 immersion Methods 0.000 description 16
- 238000003384 imaging method Methods 0.000 description 15
- 230000008878 coupling Effects 0.000 description 8
- 238000010168 coupling process Methods 0.000 description 8
- 238000005859 coupling reaction Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 238000013461 design Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 238000001393 microlithography Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- FQWUNUXAOHTLLG-ASDGIDEWSA-N 6-[(3s,6s,9s,12r)-3,6-dibenzyl-2,5,8,11-tetraoxo-1,4,7,10-tetrazabicyclo[10.3.0]pentadecan-9-yl]-n-hydroxyhexanamide Chemical compound C([C@H]1C(=O)N2CCC[C@@H]2C(=O)N[C@H](C(N[C@@H](CC=2C=CC=CC=2)C(=O)N1)=O)CCCCCC(=O)NO)C1=CC=CC=C1 FQWUNUXAOHTLLG-ASDGIDEWSA-N 0.000 description 2
- 239000004721 Polyphenylene oxide Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000000671 immersion lithography Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 241000588724 Escherichia coli Species 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
Description
Lin,B.J.の論文「Newλ/NA scaling equationsfor resolution and depth-of-focus」Optical Microlithography XIII (2000年):759 「Depth of field and depth of focus」、2000年7月25日、インターネット<URL: http://www.matter.org.uk/tem/depth_of_field.htm.> 「Optical Lithography」、Craig Friedrich、1998年、インターネット<URL: http://www.me.mtu.edu/~microweb/chap1/ch1-4-1.htm> Switckes,M、M.Rothschildの論文「Resolution Enhancement of 157 nm Lithography by Liquid Immersion」Optical Microlithography XV(2002年):459
(h+c1)2+(c2)2 =r2 2、そして、cおよびcについて代入すると、
(h+ccosθ)2 +(csinθ)2 =r2 2 従って、
Claims (14)
- フレームと、
前記フレーム内に配置されたレンズ・システムと、
液体中に浸漬するように半導体ウエハを保持し、1つの方向に沿って水平速度で移動される水平支持面と、
前記フレームの第1の端部に配置された前記レンズ・システム内の最終レンズ要素であって、前記半導体ウエハに対向するように少なくとも一部分が前記液体中に浸漬された最終レンズ表面を有し、且つ制御装置により回転される軸に結合され、該軸を中心として前記1つの方向に沿って予定の角速度で回転される前記最終レンズ要素と、
前記フレームの第2の端部に配置され、前記レンズ・システムに光を通過させる光源とを備え、
前記半導体ウエハへ前記光を投射する走査動作中に、前記液体内に乱流及び空気の泡が形成されるのを抑制するように、前記水平支持面の水平速度と前記最終レンズ要素の速度の水平成分との間の相対速度が小さくされている、光投射装置。 - 前記光源と前記レンズ・システムとの間にフォト・マスクが設けられている、請求項1に記載の装置。
- 前記水平支持面をx方向、y方向又はz方向に移動させる水平支持面制御装置が設けられている、請求項1に記載の装置。
- 前記制御装置は、コンピュータ・システム、モータ、ベルト・システム、ねじ切りした軸またはキー軸、ギア・システム、カム機構、およびオペレータによって制御される手動機構から成る群の1つ以上から選択されることを特徴とする、請求項1に記載の装置。
- 前記最終レンズ要素は一定の角速度で前記フレームに結合された軸を中心に回転し、前記フレームに対する前記水平支持面の水平速度は一定であることを特徴とする、請求項1に記載の装置。
- 前記最終レンズ要素は可変角速度で前記フレームに結合された軸を中心に回転し、前記フレームに対する前記水平支持面の水平速度は一定であることを特徴とする、請求項1に記載の装置。
- 前記最終レンズ要素は一定の角速度で前記フレームに結合された軸を中心に回転し、前記フレームに対する前記水平支持面の水平速度は可変であることを特徴とする、請求項1に記載の装置。
- 前記最終レンズ要素は可変の角速度で前記フレームに結合された軸を中心に回転し、前記フレームに対する前記水平支持面の水平速度は可変であることを特徴とする、請求項1に記載の装置。
- 前記液体は、イオン化水、過フッ化ポリエーテルから成る群から選択されることを特徴とする、請求項1に記載の装置。
- 前記装置は、閉じた環境に存在し、前記閉じた環境の雰囲気は、アルゴン、乾燥窒素、および空気から成る群から選択された1つ以上の元素または組成で主に構成されることを特徴とする、請求項1に記載の装置。
- 前記装置は、閉じた環境に存在し、前記閉じた環境の雰囲気は、1つ以上の不活性の光学的に透明な気体を備えることを特徴とする、請求項1に記載の装置。
- 前記最終レンズ要素の断面は、円柱形であることを特徴とする、請求項1に記載の装置。
- 前記最終レンズ要素は、第1の湾曲表面領域および第2の湾曲表面領域を備え、前記第1の湾曲表面領域の湾曲度は前記第2の湾曲表面領域の湾曲度よりも大きく、前記第2の湾曲表面領域は前記水平支持面に対向していることを特徴とする、請求項1に記載の装置。
- 前記最終レンズ要素は、第1の湾曲表面領域および第2の湾曲表面領域を更に備え、前記第1の湾曲表面領域の湾曲度は前記第2の湾曲表面領域の湾曲度よりも小さく、前記第2の湾曲表面領域は前記水平支持面に対向していることを特徴とする、請求項1に記載の装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/749,638 US7088422B2 (en) | 2003-12-31 | 2003-12-31 | Moving lens for immersion optical lithography |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005197690A JP2005197690A (ja) | 2005-07-21 |
JP4215713B2 true JP4215713B2 (ja) | 2009-01-28 |
Family
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Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004372593A Expired - Fee Related JP4215713B2 (ja) | 2003-12-31 | 2004-12-24 | 光投射装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7088422B2 (ja) |
JP (1) | JP4215713B2 (ja) |
CN (1) | CN1637612A (ja) |
Families Citing this family (119)
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US20050145803A1 (en) | 2005-07-07 |
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US7088422B2 (en) | 2006-08-08 |
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