JP4209297B2 - 吐出ノズル式塗布法用ポジ型ホトレジスト組成物及びレジストパターンの形成方法 - Google Patents
吐出ノズル式塗布法用ポジ型ホトレジスト組成物及びレジストパターンの形成方法 Download PDFInfo
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- JP4209297B2 JP4209297B2 JP2003347137A JP2003347137A JP4209297B2 JP 4209297 B2 JP4209297 B2 JP 4209297B2 JP 2003347137 A JP2003347137 A JP 2003347137A JP 2003347137 A JP2003347137 A JP 2003347137A JP 4209297 B2 JP4209297 B2 JP 4209297B2
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- 229920002866 paraformaldehyde Polymers 0.000 description 1
- 125000005010 perfluoroalkyl group Chemical group 0.000 description 1
- 229940100595 phenylacetaldehyde Drugs 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920006294 polydialkylsiloxane Polymers 0.000 description 1
- 150000008442 polyphenolic compounds Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229940079877 pyrogallol Drugs 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- SMQUZDBALVYZAC-UHFFFAOYSA-N salicylaldehyde Chemical compound OC1=CC=CC=C1C=O SMQUZDBALVYZAC-UHFFFAOYSA-N 0.000 description 1
- 231100000241 scar Toxicity 0.000 description 1
- 230000037387 scars Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- KUCOHFSKRZZVRO-UHFFFAOYSA-N terephthalaldehyde Chemical compound O=CC1=CC=C(C=O)C=C1 KUCOHFSKRZZVRO-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- HGBOYTHUEUWSSQ-UHFFFAOYSA-N valeric aldehyde Natural products CCCCC=O HGBOYTHUEUWSSQ-UHFFFAOYSA-N 0.000 description 1
- 150000003739 xylenols Chemical class 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
- G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003347137A JP4209297B2 (ja) | 2003-10-06 | 2003-10-06 | 吐出ノズル式塗布法用ポジ型ホトレジスト組成物及びレジストパターンの形成方法 |
| TW093127664A TWI266956B (en) | 2003-10-06 | 2004-09-13 | Positive photoresist composition for discharge nozzle-coating method and formation method of resist pattern |
| KR1020040078514A KR100702371B1 (ko) | 2003-10-06 | 2004-10-02 | 토출 노즐식 도포법용 포지티브형 포토레지스트 조성물 및레지스트 패턴의 형성방법 |
| CNB2004100833844A CN1310087C (zh) | 2003-10-06 | 2004-10-08 | 排出喷嘴式涂敷法用正型光致抗蚀剂组合物以及抗蚀图案的形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003347137A JP4209297B2 (ja) | 2003-10-06 | 2003-10-06 | 吐出ノズル式塗布法用ポジ型ホトレジスト組成物及びレジストパターンの形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005114920A JP2005114920A (ja) | 2005-04-28 |
| JP4209297B2 true JP4209297B2 (ja) | 2009-01-14 |
Family
ID=34539825
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003347137A Expired - Lifetime JP4209297B2 (ja) | 2003-10-06 | 2003-10-06 | 吐出ノズル式塗布法用ポジ型ホトレジスト組成物及びレジストパターンの形成方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP4209297B2 (ko) |
| KR (1) | KR100702371B1 (ko) |
| CN (1) | CN1310087C (ko) |
| TW (1) | TWI266956B (ko) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006145734A (ja) * | 2004-11-18 | 2006-06-08 | Nippon Zeon Co Ltd | ポジ型フォトレジスト組成物 |
| JP5057530B2 (ja) | 2006-08-04 | 2012-10-24 | ドンウー ファイン−ケム カンパニー リミテッド | ポジティブ型のフォトレジスト組成物およびこれのパターン形成方法 |
| JP5574087B2 (ja) * | 2009-01-28 | 2014-08-20 | Ｊｓｒ株式会社 | 感放射線性樹脂組成物ならびに層間絶縁膜およびその製造方法 |
| CN102346372A (zh) * | 2010-07-30 | 2012-02-08 | 奇美实业股份有限公司 | 正型感光性树脂组成物及使用该组成物形成图案的方法 |
| KR101737567B1 (ko) * | 2010-11-19 | 2017-05-18 | 주식회사 동진쎄미켐 | 포토레지스트 조성물 |
| JP5674506B2 (ja) * | 2011-02-25 | 2015-02-25 | 東京応化工業株式会社 | ポジ型レジスト組成物、レジストパターン形成方法 |
| JP5778568B2 (ja) * | 2011-12-16 | 2015-09-16 | 東京応化工業株式会社 | 厚膜用化学増幅型ポジ型ホトレジスト組成物、厚膜ホトレジスト積層体、厚膜ホトレジストパターンの製造方法及び接続端子の製造方法 |
| TWI575325B (zh) * | 2013-04-09 | 2017-03-21 | Jsr Corp | A method for forming a resist film and a pattern forming method |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ATE56545T1 (de) * | 1985-10-28 | 1990-09-15 | Hoechst Celanese Corp | Strahlungsempfindliches, positiv-arbeitendes gemisch und hieraus hergestelltes photoresistmaterial. |
| JP3060440B2 (ja) * | 1991-07-16 | 2000-07-10 | ジェイエスアール株式会社 | ポジ型レジスト組成物 |
| EP0695740B1 (en) * | 1994-08-05 | 2000-11-22 | Sumitomo Chemical Company Limited | Quinonediazide sulfonic acid esters and positive photoresist compositions comprising the same |
| JP3613640B2 (ja) * | 1994-08-05 | 2005-01-26 | 住友化学株式会社 | キノンジアジドスルホン酸エステル、その製法及び用途 |
| JPH08137100A (ja) * | 1994-11-11 | 1996-05-31 | Fuji Photo Film Co Ltd | ポジ型フォトレジスト組成物 |
| JPH0990622A (ja) * | 1995-09-22 | 1997-04-04 | Fuji Photo Film Co Ltd | ポジ型フォトレジスト組成物 |
| US5853947A (en) * | 1995-12-21 | 1998-12-29 | Clariant Finance (Bvi) Limited | Quinonediazide positive photoresist utilizing mixed solvent consisting essentially of 3-methyl-3-methoxy butanol and propylene glycol alkyl ether acetate |
| US5719004A (en) * | 1996-08-07 | 1998-02-17 | Clariant Finance (Bvi) Limited | Positive photoresist composition containing a 2,4-dinitro-1-naphthol |
| JP4312946B2 (ja) * | 2000-10-31 | 2009-08-12 | Ａｚエレクトロニックマテリアルズ株式会社 | 感光性樹脂組成物 |
| JP2002244285A (ja) * | 2001-02-20 | 2002-08-30 | Jsr Corp | 感放射線性樹脂組成物 |
| CN1166737C (zh) * | 2001-10-15 | 2004-09-15 | 奇美实业股份有限公司 | 正型感光性树脂组成物 |
| US20160223626A1 (en) * | 2013-08-30 | 2016-08-04 | Koninklijke Philips N.V. | Coil arrangement of mpi system or apparatus |
-
2003
- 2003-10-06 JP JP2003347137A patent/JP4209297B2/ja not_active Expired - Lifetime
-
2004
- 2004-09-13 TW TW093127664A patent/TWI266956B/zh active
- 2004-10-02 KR KR1020040078514A patent/KR100702371B1/ko active IP Right Grant
- 2004-10-08 CN CNB2004100833844A patent/CN1310087C/zh not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| TWI266956B (en) | 2006-11-21 |
| JP2005114920A (ja) | 2005-04-28 |
| KR20050033458A (ko) | 2005-04-12 |
| KR100702371B1 (ko) | 2007-04-02 |
| CN1310087C (zh) | 2007-04-11 |
| TW200513799A (en) | 2005-04-16 |
| CN1605939A (zh) | 2005-04-13 |
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