JP4190138B2 - ポジ型フォトレジスト組成物 - Google Patents

ポジ型フォトレジスト組成物 Download PDF

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Publication number
JP4190138B2
JP4190138B2 JP2000234733A JP2000234733A JP4190138B2 JP 4190138 B2 JP4190138 B2 JP 4190138B2 JP 2000234733 A JP2000234733 A JP 2000234733A JP 2000234733 A JP2000234733 A JP 2000234733A JP 4190138 B2 JP4190138 B2 JP 4190138B2
Authority
JP
Japan
Prior art keywords
group
acid
substituted
polymer
photoresist composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2000234733A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002049156A (ja
JP2002049156A5 (de
Inventor
亨 藤森
史郎 丹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2000234733A priority Critical patent/JP4190138B2/ja
Priority to TW090118279A priority patent/TWI240848B/zh
Priority to KR1020010046491A priority patent/KR20020011885A/ko
Publication of JP2002049156A publication Critical patent/JP2002049156A/ja
Publication of JP2002049156A5 publication Critical patent/JP2002049156A5/ja
Application granted granted Critical
Publication of JP4190138B2 publication Critical patent/JP4190138B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP2000234733A 2000-08-02 2000-08-02 ポジ型フォトレジスト組成物 Expired - Lifetime JP4190138B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2000234733A JP4190138B2 (ja) 2000-08-02 2000-08-02 ポジ型フォトレジスト組成物
TW090118279A TWI240848B (en) 2000-08-02 2001-07-26 Positive type photoresist composition
KR1020010046491A KR20020011885A (ko) 2000-08-02 2001-08-01 포지티브 포토레지스트 조성물

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000234733A JP4190138B2 (ja) 2000-08-02 2000-08-02 ポジ型フォトレジスト組成物

Publications (3)

Publication Number Publication Date
JP2002049156A JP2002049156A (ja) 2002-02-15
JP2002049156A5 JP2002049156A5 (de) 2006-01-12
JP4190138B2 true JP4190138B2 (ja) 2008-12-03

Family

ID=18727067

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000234733A Expired - Lifetime JP4190138B2 (ja) 2000-08-02 2000-08-02 ポジ型フォトレジスト組成物

Country Status (3)

Country Link
JP (1) JP4190138B2 (de)
KR (1) KR20020011885A (de)
TW (1) TWI240848B (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101036501B1 (ko) * 2002-11-22 2011-05-24 후지필름 가부시키가이샤 포지티브형 레지스트 조성물 및 그것을 사용한 패턴형성방법
KR100821440B1 (ko) 2003-01-31 2008-04-10 미츠비시 레이온 가부시키가이샤 레지스트용 중합체 및 레지스트 조성물
JP4121396B2 (ja) 2003-03-05 2008-07-23 富士フイルム株式会社 ポジ型レジスト組成物
US7232640B1 (en) 2003-03-31 2007-06-19 Fujifilm Corporation Positive resist composition
JP4115322B2 (ja) * 2003-03-31 2008-07-09 富士フイルム株式会社 ポジ型レジスト組成物
JP4418659B2 (ja) * 2003-09-26 2010-02-17 富士フイルム株式会社 ポジ型電子線、ｘ線又はｅｕｖ光用レジスト組成物及びそれを用いたパターン形成方法
JP4486839B2 (ja) * 2004-03-24 2010-06-23 富士フイルム株式会社 電子線、ｘ線又はｅｕｖ光用ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4626955B2 (ja) * 2004-10-06 2011-02-09 東邦化学工業株式会社 ｐ−ヒドロキシスチレン系重合体の製造方法
JP4921160B2 (ja) * 2006-05-30 2012-04-25 兵庫県 感光性樹脂及び感光性組成物
US8182975B2 (en) 2007-03-28 2012-05-22 Fujifilm Corporation Positive resist composition and pattern forming method using the same
JP5039410B2 (ja) * 2007-03-29 2012-10-03 富士フイルム株式会社 ポジ型レジスト組成物およびこれを用いたパターン形成方法
US7498116B2 (en) 2007-03-30 2009-03-03 Fujifilm Corporation Resist composition and pattern formation method using the same
JP5039492B2 (ja) 2007-09-28 2012-10-03 富士フイルム株式会社 ポジ型レジスト組成物およびこれを用いたパターン形成方法
JP5039493B2 (ja) 2007-09-28 2012-10-03 富士フイルム株式会社 ポジ型レジスト組成物およびこれを用いたパターン形成方法
KR101350717B1 (ko) * 2007-11-27 2014-02-04 도요 고세이 고교 가부시키가이샤 감광성 수지 및 감광성 조성물
JP5537920B2 (ja) 2009-03-26 2014-07-02 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、これを用いたレジスト膜、及び、パターン形成方法
WO2024053579A1 (ja) * 2022-09-08 2024-03-14 東京応化工業株式会社 感光性樹脂組成物

Also Published As

Publication number Publication date
TWI240848B (en) 2005-10-01
JP2002049156A (ja) 2002-02-15
KR20020011885A (ko) 2002-02-09

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