JP4179802B2 - 半導体レーザ素子とその製造方法 - Google Patents

半導体レーザ素子とその製造方法 Download PDF

Info

Publication number
JP4179802B2
JP4179802B2 JP2002151885A JP2002151885A JP4179802B2 JP 4179802 B2 JP4179802 B2 JP 4179802B2 JP 2002151885 A JP2002151885 A JP 2002151885A JP 2002151885 A JP2002151885 A JP 2002151885A JP 4179802 B2 JP4179802 B2 JP 4179802B2
Authority
JP
Japan
Prior art keywords
gan
stripe
semiconductor laser
laser device
waveguides
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2002151885A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003347675A5 (enExample
JP2003347675A (ja
Inventor
俊之 川上
元隆 種谷
茂稔 伊藤
智輝 大野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP2002151885A priority Critical patent/JP4179802B2/ja
Publication of JP2003347675A publication Critical patent/JP2003347675A/ja
Publication of JP2003347675A5 publication Critical patent/JP2003347675A5/ja
Application granted granted Critical
Publication of JP4179802B2 publication Critical patent/JP4179802B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Landscapes

  • Semiconductor Lasers (AREA)
JP2002151885A 2002-05-27 2002-05-27 半導体レーザ素子とその製造方法 Expired - Lifetime JP4179802B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002151885A JP4179802B2 (ja) 2002-05-27 2002-05-27 半導体レーザ素子とその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002151885A JP4179802B2 (ja) 2002-05-27 2002-05-27 半導体レーザ素子とその製造方法

Publications (3)

Publication Number Publication Date
JP2003347675A JP2003347675A (ja) 2003-12-05
JP2003347675A5 JP2003347675A5 (enExample) 2005-10-06
JP4179802B2 true JP4179802B2 (ja) 2008-11-12

Family

ID=29769341

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002151885A Expired - Lifetime JP4179802B2 (ja) 2002-05-27 2002-05-27 半導体レーザ素子とその製造方法

Country Status (1)

Country Link
JP (1) JP4179802B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006006312A1 (ja) * 2004-07-07 2006-01-19 Nec Corporation 光半導体装置及び光通信装置
JP4889930B2 (ja) * 2004-08-27 2012-03-07 シャープ株式会社 窒化物半導体レーザ素子の製造方法
CN101127434A (zh) * 2006-06-20 2008-02-20 索尼株式会社 半导体器件及其制造方法
JP5034662B2 (ja) 2006-06-20 2012-09-26 ソニー株式会社 面発光型半導体レーザおよびその製造方法
DE102016111058A1 (de) 2016-06-16 2017-12-21 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Laserdiodenbarrens und Laserdiodenbarren

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63164285A (ja) * 1986-12-25 1988-07-07 Matsushita Electric Ind Co Ltd 光電子集積回路の製造方法
JP2814906B2 (ja) * 1993-01-07 1998-10-27 日本電気株式会社 光半導体素子およびその製造方法
JP3611593B2 (ja) * 1994-02-14 2005-01-19 日本オプネクスト株式会社 半導体光素子の作製方法
JPH08184789A (ja) * 1995-01-04 1996-07-16 Canon Inc 偏波無依存波長フィルタ
JP3655066B2 (ja) * 1997-09-16 2005-06-02 株式会社東芝 窒化ガリウム系化合物半導体レーザ及びその製造方法
JPH11251682A (ja) * 1998-03-04 1999-09-17 Hitachi Ltd 半導体光素子
JP3595167B2 (ja) * 1998-07-29 2004-12-02 日本オプネクスト株式会社 半導体発光素子およびその素子を組み込んだ半導体発光装置ならびにそれらの製造方法
JP3864634B2 (ja) * 1998-09-25 2007-01-10 三菱化学株式会社 半導体発光装置及びその製造方法
JP2000164971A (ja) * 1998-11-20 2000-06-16 Nec Corp アレイ型レーザダイオード及び製造方法
JP2000357842A (ja) * 1999-06-16 2000-12-26 Sony Corp 半導体レーザ
JP3862894B2 (ja) * 1999-08-18 2006-12-27 株式会社東芝 半導体レーザ装置
JP2001358409A (ja) * 2000-06-14 2001-12-26 Mitsubishi Chemicals Corp 半導体光デバイス装置及びその製造方法
JP2002185077A (ja) * 2000-12-14 2002-06-28 Mitsubishi Electric Corp 半導体レーザ装置及びその製造方法
JP2002223035A (ja) * 2001-01-26 2002-08-09 Sanyo Electric Co Ltd 半導体発光素子およびその製造方法

Also Published As

Publication number Publication date
JP2003347675A (ja) 2003-12-05

Similar Documents

Publication Publication Date Title
US8288794B2 (en) Nitride semiconductor layers on substrate having ridge portions with inflow prevention walls near engraved regions
JP4166885B2 (ja) 光半導体装置およびその製造方法
JP4169821B2 (ja) 発光ダイオード
US20080049806A1 (en) Nitride semiconductor laser and method for fabricating the same
KR100539289B1 (ko) 반도체 발광 장치 및 그 제조 방법
US20150155684A1 (en) Method for manufacturing semiconductor laser device
KR20100098565A (ko) 반도체 발광 소자
JP4040192B2 (ja) 半導体発光素子の製造方法
JP3650000B2 (ja) 窒化物系半導体レーザ素子および窒化物半導体レーザ装置の製造方法
US20090168827A1 (en) Nitride semiconductor laser chip and method of fabricating same
JP2012124273A (ja) 半導体レーザ素子
US7167489B2 (en) GaN-based semiconductor laser device
JP2002314203A (ja) ３族窒化物半導体レーザ及びその製造方法
JP2000058981A (ja) 窒化ガリウム系半導体発光素子及びその製造方法
JP4959644B2 (ja) 半導体レーザ素子、半導体ウェハおよび半導体レーザ素子の製造方法
JP2001196694A (ja) 半導体レーザ素子及びその製造方法
JP4179802B2 (ja) 半導体レーザ素子とその製造方法
CN101119012B (zh) 半导体器件及其制造方法
JP5079613B2 (ja) 窒化物系半導体レーザ素子およびその製造方法
JP4689195B2 (ja) 半導体素子の製造方法
JP2004007009A (ja) 窒化物半導体素子の製造方法
JP7586007B2 (ja) 半導体発光素子および半導体発光素子の製造方法
JP4425948B2 (ja) 窒化物半導体レーザ
JP3986416B2 (ja) 窒化物半導体レーザ
JPH11274641A (ja) 半導体素子およびその製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050526

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050526

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20080417

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080422

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080620

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20080819

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20080826

R150 Certificate of patent or registration of utility model

Ref document number: 4179802

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110905

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120905

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130905

Year of fee payment: 5

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R371 Transfer withdrawn

Free format text: JAPANESE INTERMEDIATE CODE: R371

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

EXPY Cancellation because of completion of term