JP4159713B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4159713B2
JP4159713B2 JP33179499A JP33179499A JP4159713B2 JP 4159713 B2 JP4159713 B2 JP 4159713B2 JP 33179499 A JP33179499 A JP 33179499A JP 33179499 A JP33179499 A JP 33179499A JP 4159713 B2 JP4159713 B2 JP 4159713B2
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Japan
Prior art keywords
gate electrode
pair
impurity regions
film
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP33179499A
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English (en)
Japanese (ja)
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JP2000223714A5 (enExample
JP2000223714A (ja
Inventor
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP33179499A priority Critical patent/JP4159713B2/ja
Publication of JP2000223714A publication Critical patent/JP2000223714A/ja
Publication of JP2000223714A5 publication Critical patent/JP2000223714A5/ja
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Publication of JP4159713B2 publication Critical patent/JP4159713B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
JP33179499A 1998-11-25 1999-11-22 半導体装置 Expired - Fee Related JP4159713B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33179499A JP4159713B2 (ja) 1998-11-25 1999-11-22 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP10-333665 1998-11-25
JP33366598 1998-11-25
JP33179499A JP4159713B2 (ja) 1998-11-25 1999-11-22 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2005301223A Division JP4160072B2 (ja) 1998-11-25 2005-10-17 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2000223714A JP2000223714A (ja) 2000-08-11
JP2000223714A5 JP2000223714A5 (enExample) 2005-12-02
JP4159713B2 true JP4159713B2 (ja) 2008-10-01

Family

ID=26573968

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33179499A Expired - Fee Related JP4159713B2 (ja) 1998-11-25 1999-11-22 半導体装置

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JP (1) JP4159713B2 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6534826B2 (en) 1999-04-30 2003-03-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP4850328B2 (ja) * 2000-08-29 2012-01-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5046452B2 (ja) * 2000-10-26 2012-10-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2002151698A (ja) * 2000-11-14 2002-05-24 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP4737828B2 (ja) * 2000-12-21 2011-08-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW525216B (en) 2000-12-11 2003-03-21 Semiconductor Energy Lab Semiconductor device, and manufacturing method thereof
JP4926321B2 (ja) * 2001-01-24 2012-05-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4939690B2 (ja) * 2001-01-30 2012-05-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4801262B2 (ja) * 2001-01-30 2011-10-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4693257B2 (ja) * 2001-02-21 2011-06-01 株式会社半導体エネルギー研究所 半導体装置の作製方法
SG142160A1 (en) 2001-03-19 2008-05-28 Semiconductor Energy Lab Method of manufacturing a semiconductor device
JP4338934B2 (ja) * 2001-03-27 2009-10-07 株式会社半導体エネルギー研究所 配線の作製方法
SG116443A1 (en) 2001-03-27 2005-11-28 Semiconductor Energy Lab Wiring and method of manufacturing the same, and wiring board and method of manufacturing the same.
JP4926329B2 (ja) 2001-03-27 2012-05-09 株式会社半導体エネルギー研究所 半導体装置およびその作製方法、電気器具
KR100983525B1 (ko) 2003-12-26 2010-09-24 삼성전자주식회사 상보형 박막트랜지스터 형성방법과 이에 의한 상보형박막트랜지스터
JP2006003493A (ja) * 2004-06-16 2006-01-05 Nikon Corp 形状転写方法
EP2261960B1 (en) 2008-04-02 2018-10-10 NLT Technologies, Ltd. Semiconductor device, semiconductor device manufacturing method, liquid crystal display device and electronic apparatus
JP5520911B2 (ja) * 2011-10-12 2014-06-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9786793B2 (en) * 2012-03-29 2017-10-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor layer including regions with different concentrations of resistance-reducing elements

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Publication number Publication date
JP2000223714A (ja) 2000-08-11

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