JP4154891B2 - シリコン単結晶の製造方法 - Google Patents
シリコン単結晶の製造方法 Download PDFInfo
- Publication number
- JP4154891B2 JP4154891B2 JP2001519948A JP2001519948A JP4154891B2 JP 4154891 B2 JP4154891 B2 JP 4154891B2 JP 2001519948 A JP2001519948 A JP 2001519948A JP 2001519948 A JP2001519948 A JP 2001519948A JP 4154891 B2 JP4154891 B2 JP 4154891B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crystal
- silicon single
- defect
- defects
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/206—Controlling or regulating the thermal history of growing the ingot
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24396199 | 1999-08-30 | ||
PCT/JP2000/005873 WO2001016410A1 (fr) | 1999-08-30 | 2000-08-30 | Procede de fabrication de silicium monocristallin, silicium monocristallin fabrique par ce procede et plaquette de silicium |
Publications (1)
Publication Number | Publication Date |
---|---|
JP4154891B2 true JP4154891B2 (ja) | 2008-09-24 |
Family
ID=17111626
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001519948A Expired - Fee Related JP4154891B2 (ja) | 1999-08-30 | 2000-08-30 | シリコン単結晶の製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6544332B1 (de) |
EP (1) | EP1127962B1 (de) |
JP (1) | JP4154891B2 (de) |
KR (1) | KR100780097B1 (de) |
DE (1) | DE60007066T2 (de) |
WO (1) | WO2001016410A1 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6599360B2 (en) | 2000-01-25 | 2003-07-29 | Shin-Etsu Handotai Co., Ltd. | Silicon wafer, method for determining production conditions of silicon single crystal and method for producing silicon wafer |
KR101129907B1 (ko) * | 2010-01-25 | 2012-03-23 | 주식회사 엘지실트론 | 단결정 성장방법 |
CN101792933B (zh) * | 2010-03-10 | 2012-06-06 | 嘉兴明通光能科技有限公司 | 太阳能级硅单晶混合掺杂配料方法 |
US9212900B2 (en) * | 2012-08-11 | 2015-12-15 | Seagate Technology Llc | Surface features characterization |
US9377394B2 (en) * | 2012-10-16 | 2016-06-28 | Seagate Technology Llc | Distinguishing foreign surface features from native surface features |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60251190A (ja) | 1984-05-25 | 1985-12-11 | Shin Etsu Handotai Co Ltd | シリコン単結晶の製造方法 |
US4981549A (en) * | 1988-02-23 | 1991-01-01 | Mitsubishi Kinzoku Kabushiki Kaisha | Method and apparatus for growing silicon crystals |
JPH06103714B2 (ja) | 1990-11-22 | 1994-12-14 | 信越半導体株式会社 | シリコン単結晶の電気特性検査方法 |
JP4097729B2 (ja) | 1996-05-22 | 2008-06-11 | Sumco Techxiv株式会社 | 半導体単結晶製造装置 |
DE19637182A1 (de) | 1996-09-12 | 1998-03-19 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung von Halbleiterscheiben aus Silicium mit geringer Defektdichte |
JPH10194890A (ja) | 1996-12-27 | 1998-07-28 | Komatsu Electron Metals Co Ltd | シリコン単結晶の製造方法 |
JP4041182B2 (ja) | 1997-01-27 | 2008-01-30 | Sumco Techxiv株式会社 | 熱処理用シリコンウェーハ及びその製造方法 |
US6042646A (en) | 1997-01-29 | 2000-03-28 | Komatsu Electric Metals Co., Ltd. | Simple method for detecting temperature distributions in single crystals and method for manufacturing silicon single crystals by employing the simple method |
JPH10330189A (ja) | 1997-01-29 | 1998-12-15 | Komatsu Electron Metals Co Ltd | 単結晶の温度分布簡易測定方法及び簡易測定方法を利用したシリコン単結晶の製造方法 |
TW589415B (en) * | 1998-03-09 | 2004-06-01 | Shinetsu Handotai Kk | Method for producing silicon single crystal wafer and silicon single crystal wafer |
JPH11349393A (ja) | 1998-06-03 | 1999-12-21 | Shin Etsu Handotai Co Ltd | シリコン単結晶ウエーハおよびシリコン単結晶ウエーハの製造方法 |
JP3255114B2 (ja) | 1998-06-18 | 2002-02-12 | 信越半導体株式会社 | 窒素ドープした低欠陥シリコン単結晶の製造方法 |
US6413310B1 (en) * | 1998-08-31 | 2002-07-02 | Shin-Etsu Handotai Co., Ltd. | Method for producing silicon single crystal wafer and silicon single crystal wafer |
-
2000
- 2000-08-30 JP JP2001519948A patent/JP4154891B2/ja not_active Expired - Fee Related
- 2000-08-30 DE DE60007066T patent/DE60007066T2/de not_active Expired - Lifetime
- 2000-08-30 WO PCT/JP2000/005873 patent/WO2001016410A1/ja active IP Right Grant
- 2000-08-30 KR KR1020017005360A patent/KR100780097B1/ko active IP Right Grant
- 2000-08-30 EP EP00956805A patent/EP1127962B1/de not_active Expired - Lifetime
- 2000-08-30 US US09/830,386 patent/US6544332B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR100780097B1 (ko) | 2007-11-29 |
DE60007066D1 (de) | 2004-01-22 |
EP1127962A1 (de) | 2001-08-29 |
DE60007066T2 (de) | 2004-09-02 |
KR20010080345A (ko) | 2001-08-22 |
EP1127962A4 (de) | 2002-03-20 |
WO2001016410A1 (fr) | 2001-03-08 |
US6544332B1 (en) | 2003-04-08 |
EP1127962B1 (de) | 2003-12-10 |
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