JP4153606B2 - プラズマエッチング方法およびプラズマエッチング装置 - Google Patents

プラズマエッチング方法およびプラズマエッチング装置 Download PDF

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Publication number
JP4153606B2
JP4153606B2 JP31994298A JP31994298A JP4153606B2 JP 4153606 B2 JP4153606 B2 JP 4153606B2 JP 31994298 A JP31994298 A JP 31994298A JP 31994298 A JP31994298 A JP 31994298A JP 4153606 B2 JP4153606 B2 JP 4153606B2
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JP
Japan
Prior art keywords
etching
bias power
film
plasma
processing chamber
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Expired - Lifetime
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JP31994298A
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English (en)
Japanese (ja)
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JP2000133638A (ja
JP2000133638A5 (https=
Inventor
一也 永関
剛 斉藤
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Tokyo Electron Ltd
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Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP31994298A priority Critical patent/JP4153606B2/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to PCT/JP1999/005821 priority patent/WO2000024046A1/ja
Priority to EP99949351A priority patent/EP1143496B1/en
Priority to KR1020017004885A priority patent/KR100590370B1/ko
Priority to US09/807,896 priority patent/US6793832B1/en
Priority to DE69942372T priority patent/DE69942372D1/de
Publication of JP2000133638A publication Critical patent/JP2000133638A/ja
Publication of JP2000133638A5 publication Critical patent/JP2000133638A5/ja
Application granted granted Critical
Publication of JP4153606B2 publication Critical patent/JP4153606B2/ja
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Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • ing And Chemical Polishing (AREA)
JP31994298A 1998-10-22 1998-10-22 プラズマエッチング方法およびプラズマエッチング装置 Expired - Lifetime JP4153606B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP31994298A JP4153606B2 (ja) 1998-10-22 1998-10-22 プラズマエッチング方法およびプラズマエッチング装置
EP99949351A EP1143496B1 (en) 1998-10-22 1999-10-22 Plasma etching method
KR1020017004885A KR100590370B1 (ko) 1998-10-22 1999-10-22 플라즈마 에칭 방법
US09/807,896 US6793832B1 (en) 1998-10-22 1999-10-22 Plasma etching method
PCT/JP1999/005821 WO2000024046A1 (en) 1998-10-22 1999-10-22 Plasma etching method
DE69942372T DE69942372D1 (de) 1998-10-22 1999-10-22 Plasmaätzverfahren

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31994298A JP4153606B2 (ja) 1998-10-22 1998-10-22 プラズマエッチング方法およびプラズマエッチング装置

Publications (3)

Publication Number Publication Date
JP2000133638A JP2000133638A (ja) 2000-05-12
JP2000133638A5 JP2000133638A5 (https=) 2005-11-04
JP4153606B2 true JP4153606B2 (ja) 2008-09-24

Family

ID=18115972

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31994298A Expired - Lifetime JP4153606B2 (ja) 1998-10-22 1998-10-22 プラズマエッチング方法およびプラズマエッチング装置

Country Status (6)

Country Link
US (1) US6793832B1 (https=)
EP (1) EP1143496B1 (https=)
JP (1) JP4153606B2 (https=)
KR (1) KR100590370B1 (https=)
DE (1) DE69942372D1 (https=)
WO (1) WO2000024046A1 (https=)

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KR100327346B1 (ko) * 1999-07-20 2002-03-06 윤종용 선택적 폴리머 증착을 이용한 플라즈마 식각방법 및 이를이용한 콘택홀 형성방법
KR20020017182A (ko) * 2000-08-29 2002-03-07 윤종용 옥타플루오로부텐으로 이루어지는 식각 가스를 이용한반도체 소자의 제조방법
DE10053780A1 (de) * 2000-10-30 2002-05-16 Infineon Technologies Ag Verfahren zur Strukturierung einer Siliziumoxid-Schicht
US7169695B2 (en) * 2002-10-11 2007-01-30 Lam Research Corporation Method for forming a dual damascene structure
KR100517075B1 (ko) 2003-08-11 2005-09-26 삼성전자주식회사 반도체 소자 제조 방법
KR100656708B1 (ko) 2005-04-01 2006-12-13 주식회사 에이디피엔지니어링 플라즈마 처리장치
JP4653603B2 (ja) * 2005-09-13 2011-03-16 株式会社日立ハイテクノロジーズ プラズマエッチング方法
US7488687B2 (en) 2006-09-12 2009-02-10 Samsung Electronics Co., Ltd. Methods of forming electrical interconnect structures using polymer residues to increase etching selectivity through dielectric layers
US7491343B2 (en) * 2006-09-14 2009-02-17 Lam Research Corporation Line end shortening reduction during etch
US7407597B2 (en) * 2006-09-14 2008-08-05 Lam Research Corporation Line end shortening reduction during etch
US7547636B2 (en) * 2007-02-05 2009-06-16 Lam Research Corporation Pulsed ultra-high aspect ratio dielectric etch
US7771606B2 (en) * 2007-02-22 2010-08-10 Applied Materials, Inc. Pulsed-plasma system with pulsed reaction gas replenish for etching semiconductors structures
US7718538B2 (en) * 2007-02-21 2010-05-18 Applied Materials, Inc. Pulsed-plasma system with pulsed sample bias for etching semiconductor substrates
US7737042B2 (en) * 2007-02-22 2010-06-15 Applied Materials, Inc. Pulsed-plasma system for etching semiconductor structures
WO2008110547A1 (en) * 2007-03-12 2008-09-18 Aixtron Ag Novel plasma system for improved process capability
US7846846B2 (en) * 2007-09-25 2010-12-07 Applied Materials, Inc. Method of preventing etch profile bending and bowing in high aspect ratio openings by treating a polymer formed on the opening sidewalls
JP5268625B2 (ja) * 2008-12-26 2013-08-21 株式会社日立ハイテクノロジーズ プラズマ処理装置
KR101037043B1 (ko) * 2009-02-27 2011-05-26 성균관대학교산학협력단 반도체 기판의 비아 형성방법
US9478408B2 (en) 2014-06-06 2016-10-25 Lam Research Corporation Systems and methods for removing particles from a substrate processing chamber using RF plasma cycling and purging
US10047438B2 (en) 2014-06-10 2018-08-14 Lam Research Corporation Defect control and stability of DC bias in RF plasma-based substrate processing systems using molecular reactive purge gas
US10081869B2 (en) 2014-06-10 2018-09-25 Lam Research Corporation Defect control in RF plasma substrate processing systems using DC bias voltage during movement of substrates
CN105719965A (zh) * 2014-12-04 2016-06-29 北京北方微电子基地设备工艺研究中心有限责任公司 二氧化硅基片的刻蚀方法和刻蚀设备
JP6504827B2 (ja) * 2015-01-16 2019-04-24 東京エレクトロン株式会社 エッチング方法
US9691625B2 (en) * 2015-11-04 2017-06-27 Lam Research Corporation Methods and systems for plasma etching using bi-modal process gas composition responsive to plasma power level
JP6833657B2 (ja) 2017-11-07 2021-02-24 東京エレクトロン株式会社 基板をプラズマエッチングする方法
JP2019212776A (ja) * 2018-06-05 2019-12-12 東京エレクトロン株式会社 成膜用組成物および成膜装置
JP2019212777A (ja) * 2018-06-05 2019-12-12 東京エレクトロン株式会社 成膜用組成物および成膜装置
US10593518B1 (en) * 2019-02-08 2020-03-17 Applied Materials, Inc. Methods and apparatus for etching semiconductor structures
US11456180B2 (en) 2019-11-08 2022-09-27 Tokyo Electron Limited Etching method
WO2021090516A1 (ja) * 2019-11-08 2021-05-14 東京エレクトロン株式会社 エッチング方法
KR20250165342A (ko) * 2023-03-28 2025-11-25 도쿄엘렉트론가부시키가이샤 에칭 장치 및 에칭 방법
KR20250179809A (ko) * 2024-06-24 2025-12-31 성균관대학교산학협력단 그리드 펄싱 기술을 이용한 EUV PR/SiON 패턴에서의 식각 선택비 및 손상 제어 장치 및 방법

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US4855017A (en) * 1985-05-03 1989-08-08 Texas Instruments Incorporated Trench etch process for a single-wafer RIE dry etch reactor
KR900007687B1 (ko) * 1986-10-17 1990-10-18 가부시기가이샤 히다찌세이사꾸쇼 플라즈마처리방법 및 장치
JP2918892B2 (ja) * 1988-10-14 1999-07-12 株式会社日立製作所 プラズマエッチング処理方法
US5888414A (en) 1991-06-27 1999-03-30 Applied Materials, Inc. Plasma reactor and processes using RF inductive coupling and scavenger temperature control
EP0849766A3 (en) * 1992-01-24 1998-10-14 Applied Materials, Inc. Etch process
JP2625072B2 (ja) * 1992-09-08 1997-06-25 アプライド マテリアルズ インコーポレイテッド 電磁ｒｆ結合を用いたプラズマ反応装置及びその方法
US5573597A (en) * 1995-06-07 1996-11-12 Sony Corporation Plasma processing system with reduced particle contamination
EP0822582B1 (en) 1996-08-01 2003-10-01 Surface Technology Systems Plc Method of etching substrates

Also Published As

Publication number Publication date
EP1143496B1 (en) 2010-05-12
EP1143496A1 (en) 2001-10-10
KR100590370B1 (ko) 2006-06-15
US6793832B1 (en) 2004-09-21
JP2000133638A (ja) 2000-05-12
DE69942372D1 (de) 2010-06-24
WO2000024046A1 (en) 2000-04-27
EP1143496A4 (en) 2006-12-13
KR20010080234A (ko) 2001-08-22

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