KR100590370B1 - 플라즈마 에칭 방법 - Google Patents

플라즈마 에칭 방법 Download PDF

Info

Publication number
KR100590370B1
KR100590370B1 KR1020017004885A KR20017004885A KR100590370B1 KR 100590370 B1 KR100590370 B1 KR 100590370B1 KR 1020017004885 A KR1020017004885 A KR 1020017004885A KR 20017004885 A KR20017004885 A KR 20017004885A KR 100590370 B1 KR100590370 B1 KR 100590370B1
Authority
KR
South Korea
Prior art keywords
etching
film
time
plasma
bias power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1020017004885A
Other languages
English (en)
Korean (ko)
Other versions
KR20010080234A (ko
Inventor
사이토다케시
나가세키가즈야
Original Assignee
동경 엘렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 동경 엘렉트론 주식회사 filed Critical 동경 엘렉트론 주식회사
Publication of KR20010080234A publication Critical patent/KR20010080234A/ko
Application granted granted Critical
Publication of KR100590370B1 publication Critical patent/KR100590370B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • ing And Chemical Polishing (AREA)
KR1020017004885A 1998-10-22 1999-10-22 플라즈마 에칭 방법 Expired - Lifetime KR100590370B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP98-319942 1998-10-22
JP31994298A JP4153606B2 (ja) 1998-10-22 1998-10-22 プラズマエッチング方法およびプラズマエッチング装置

Publications (2)

Publication Number Publication Date
KR20010080234A KR20010080234A (ko) 2001-08-22
KR100590370B1 true KR100590370B1 (ko) 2006-06-15

Family

ID=18115972

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020017004885A Expired - Lifetime KR100590370B1 (ko) 1998-10-22 1999-10-22 플라즈마 에칭 방법

Country Status (6)

Country Link
US (1) US6793832B1 (https=)
EP (1) EP1143496B1 (https=)
JP (1) JP4153606B2 (https=)
KR (1) KR100590370B1 (https=)
DE (1) DE69942372D1 (https=)
WO (1) WO2000024046A1 (https=)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100327346B1 (ko) * 1999-07-20 2002-03-06 윤종용 선택적 폴리머 증착을 이용한 플라즈마 식각방법 및 이를이용한 콘택홀 형성방법
KR20020017182A (ko) * 2000-08-29 2002-03-07 윤종용 옥타플루오로부텐으로 이루어지는 식각 가스를 이용한반도체 소자의 제조방법
DE10053780A1 (de) * 2000-10-30 2002-05-16 Infineon Technologies Ag Verfahren zur Strukturierung einer Siliziumoxid-Schicht
US7169695B2 (en) * 2002-10-11 2007-01-30 Lam Research Corporation Method for forming a dual damascene structure
KR100517075B1 (ko) 2003-08-11 2005-09-26 삼성전자주식회사 반도체 소자 제조 방법
KR100656708B1 (ko) 2005-04-01 2006-12-13 주식회사 에이디피엔지니어링 플라즈마 처리장치
JP4653603B2 (ja) * 2005-09-13 2011-03-16 株式会社日立ハイテクノロジーズ プラズマエッチング方法
US7488687B2 (en) 2006-09-12 2009-02-10 Samsung Electronics Co., Ltd. Methods of forming electrical interconnect structures using polymer residues to increase etching selectivity through dielectric layers
US7491343B2 (en) * 2006-09-14 2009-02-17 Lam Research Corporation Line end shortening reduction during etch
US7407597B2 (en) * 2006-09-14 2008-08-05 Lam Research Corporation Line end shortening reduction during etch
US7547636B2 (en) * 2007-02-05 2009-06-16 Lam Research Corporation Pulsed ultra-high aspect ratio dielectric etch
US7771606B2 (en) * 2007-02-22 2010-08-10 Applied Materials, Inc. Pulsed-plasma system with pulsed reaction gas replenish for etching semiconductors structures
US7718538B2 (en) * 2007-02-21 2010-05-18 Applied Materials, Inc. Pulsed-plasma system with pulsed sample bias for etching semiconductor substrates
US7737042B2 (en) * 2007-02-22 2010-06-15 Applied Materials, Inc. Pulsed-plasma system for etching semiconductor structures
WO2008110547A1 (en) * 2007-03-12 2008-09-18 Aixtron Ag Novel plasma system for improved process capability
US7846846B2 (en) * 2007-09-25 2010-12-07 Applied Materials, Inc. Method of preventing etch profile bending and bowing in high aspect ratio openings by treating a polymer formed on the opening sidewalls
JP5268625B2 (ja) * 2008-12-26 2013-08-21 株式会社日立ハイテクノロジーズ プラズマ処理装置
KR101037043B1 (ko) * 2009-02-27 2011-05-26 성균관대학교산학협력단 반도체 기판의 비아 형성방법
US9478408B2 (en) 2014-06-06 2016-10-25 Lam Research Corporation Systems and methods for removing particles from a substrate processing chamber using RF plasma cycling and purging
US10047438B2 (en) 2014-06-10 2018-08-14 Lam Research Corporation Defect control and stability of DC bias in RF plasma-based substrate processing systems using molecular reactive purge gas
US10081869B2 (en) 2014-06-10 2018-09-25 Lam Research Corporation Defect control in RF plasma substrate processing systems using DC bias voltage during movement of substrates
CN105719965A (zh) * 2014-12-04 2016-06-29 北京北方微电子基地设备工艺研究中心有限责任公司 二氧化硅基片的刻蚀方法和刻蚀设备
JP6504827B2 (ja) * 2015-01-16 2019-04-24 東京エレクトロン株式会社 エッチング方法
US9691625B2 (en) * 2015-11-04 2017-06-27 Lam Research Corporation Methods and systems for plasma etching using bi-modal process gas composition responsive to plasma power level
JP6833657B2 (ja) 2017-11-07 2021-02-24 東京エレクトロン株式会社 基板をプラズマエッチングする方法
JP2019212776A (ja) * 2018-06-05 2019-12-12 東京エレクトロン株式会社 成膜用組成物および成膜装置
JP2019212777A (ja) * 2018-06-05 2019-12-12 東京エレクトロン株式会社 成膜用組成物および成膜装置
US10593518B1 (en) * 2019-02-08 2020-03-17 Applied Materials, Inc. Methods and apparatus for etching semiconductor structures
US11456180B2 (en) 2019-11-08 2022-09-27 Tokyo Electron Limited Etching method
WO2021090516A1 (ja) * 2019-11-08 2021-05-14 東京エレクトロン株式会社 エッチング方法
KR20250165342A (ko) * 2023-03-28 2025-11-25 도쿄엘렉트론가부시키가이샤 에칭 장치 및 에칭 방법
KR20250179809A (ko) * 2024-06-24 2025-12-31 성균관대학교산학협력단 그리드 펄싱 기술을 이용한 EUV PR/SiON 패턴에서의 식각 선택비 및 손상 제어 장치 및 방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4855017A (en) * 1985-05-03 1989-08-08 Texas Instruments Incorporated Trench etch process for a single-wafer RIE dry etch reactor
KR900007687B1 (ko) * 1986-10-17 1990-10-18 가부시기가이샤 히다찌세이사꾸쇼 플라즈마처리방법 및 장치
JP2918892B2 (ja) * 1988-10-14 1999-07-12 株式会社日立製作所 プラズマエッチング処理方法
US5888414A (en) 1991-06-27 1999-03-30 Applied Materials, Inc. Plasma reactor and processes using RF inductive coupling and scavenger temperature control
EP0849766A3 (en) * 1992-01-24 1998-10-14 Applied Materials, Inc. Etch process
JP2625072B2 (ja) * 1992-09-08 1997-06-25 アプライド マテリアルズ インコーポレイテッド 電磁ｒｆ結合を用いたプラズマ反応装置及びその方法
US5573597A (en) * 1995-06-07 1996-11-12 Sony Corporation Plasma processing system with reduced particle contamination
EP0822582B1 (en) 1996-08-01 2003-10-01 Surface Technology Systems Plc Method of etching substrates

Also Published As

Publication number Publication date
EP1143496B1 (en) 2010-05-12
EP1143496A1 (en) 2001-10-10
US6793832B1 (en) 2004-09-21
JP2000133638A (ja) 2000-05-12
DE69942372D1 (de) 2010-06-24
WO2000024046A1 (en) 2000-04-27
EP1143496A4 (en) 2006-12-13
KR20010080234A (ko) 2001-08-22
JP4153606B2 (ja) 2008-09-24

Similar Documents

Publication Publication Date Title
KR100590370B1 (ko) 플라즈마 에칭 방법
US6093332A (en) Methods for reducing mask erosion during plasma etching
US10629473B2 (en) Footing removal for nitride spacer
CN100355033C (zh) 蚀刻高长径比零件的方法
KR100718072B1 (ko) 기판의 실리콘층에 직통으로 접촉홀을 형성하기 위한 방법
KR100595065B1 (ko) 드라이 에칭 방법
US6432832B1 (en) Method of improving the profile angle between narrow and wide features
JP2006148156A (ja) 基板をエッチングするための方法と装置
US10424487B2 (en) Atomic layer etching processes
JP4209774B2 (ja) シリコン基板のエッチング方法およびエッチング装置
CN101461072A (zh) 用于等离子处理系统的最小化掩模的底切及刻痕的方法
JP4351806B2 (ja) フォトレジストマスクを使用してエッチングするための改良技術
US6756314B2 (en) Method for etching a hard mask layer and a metal layer
KR100932763B1 (ko) 시료의 플라즈마 에칭방법
CN101331092B (zh) 用于等离子处理系统的刻痕停止脉冲工艺
JP5041696B2 (ja) ドライエッチング方法
JP7653327B2 (ja) エッチング方法及びエッチング処理装置
TW202245053A (zh) 蝕刻方法及蝕刻處理裝置
WO2023199371A1 (ja) プラズマ処理方法
CN120199686A (zh) 处理半导体衬底的方法和设备
CN121442977A (zh) 等离子体切割半导体晶片的方法

Legal Events

Date Code Title Description
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20130524

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20140530

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

FPAY Annual fee payment

Payment date: 20150515

Year of fee payment: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

FPAY Annual fee payment

Payment date: 20160517

Year of fee payment: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

FPAY Annual fee payment

Payment date: 20170522

Year of fee payment: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

FPAY Annual fee payment

Payment date: 20180518

Year of fee payment: 13

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

FPAY Annual fee payment

Payment date: 20190516

Year of fee payment: 14

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 14

PC1801 Expiration of term

St.27 status event code: N-4-6-H10-H14-oth-PC1801

Not in force date: 20191023

Ip right cessation event data comment text: Termination Category : EXPIRATION_OF_DURATION

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000