JP4146978B2 - 細孔を有する構造体の製造方法、該製造方法により製造された構造体 - Google Patents

細孔を有する構造体の製造方法、該製造方法により製造された構造体 Download PDF

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Publication number
JP4146978B2
JP4146978B2 JP35309499A JP35309499A JP4146978B2 JP 4146978 B2 JP4146978 B2 JP 4146978B2 JP 35309499 A JP35309499 A JP 35309499A JP 35309499 A JP35309499 A JP 35309499A JP 4146978 B2 JP4146978 B2 JP 4146978B2
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Japan
Prior art keywords
pore
pores
aluminum
regulating member
pore arrangement
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Expired - Fee Related
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JP35309499A
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Japanese (ja)
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JP2000254900A (ja
JP2000254900A5 (enExample
Inventor
達哉 岩崎
透 田
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP35309499A priority Critical patent/JP4146978B2/ja
Priority to US09/472,125 priority patent/US6464853B1/en
Priority to EP99310595A priority patent/EP1020545A3/en
Publication of JP2000254900A publication Critical patent/JP2000254900A/ja
Priority to US10/222,901 priority patent/US6790787B2/en
Publication of JP2000254900A5 publication Critical patent/JP2000254900A5/ja
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    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02Anodisation
    • C25D11/04Anodisation of aluminium or alloys based thereon
    • C25D11/045Anodisation of aluminium or alloys based thereon for forming AAO templates

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
  • Micromachines (AREA)
  • Catalysts (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
  • Semiconductor Memories (AREA)
JP35309499A 1999-01-06 1999-12-13 細孔を有する構造体の製造方法、該製造方法により製造された構造体 Expired - Fee Related JP4146978B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP35309499A JP4146978B2 (ja) 1999-01-06 1999-12-13 細孔を有する構造体の製造方法、該製造方法により製造された構造体
US09/472,125 US6464853B1 (en) 1999-01-06 1999-12-23 Method of producing structure having narrow pores by anodizing
EP99310595A EP1020545A3 (en) 1999-01-06 1999-12-24 Method of producing structure having narrow pores and structure produced by the same method
US10/222,901 US6790787B2 (en) 1999-01-06 2002-08-19 Structure having narrow pores

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP11-1269 1999-01-06
JP126999 1999-01-06
JP11-1268 1999-01-06
JP126899 1999-01-06
JP35309499A JP4146978B2 (ja) 1999-01-06 1999-12-13 細孔を有する構造体の製造方法、該製造方法により製造された構造体

Publications (3)

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JP2000254900A JP2000254900A (ja) 2000-09-19
JP2000254900A5 JP2000254900A5 (enExample) 2004-12-09
JP4146978B2 true JP4146978B2 (ja) 2008-09-10

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JP35309499A Expired - Fee Related JP4146978B2 (ja) 1999-01-06 1999-12-13 細孔を有する構造体の製造方法、該製造方法により製造された構造体

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US (2) US6464853B1 (enExample)
EP (1) EP1020545A3 (enExample)
JP (1) JP4146978B2 (enExample)

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JP4583025B2 (ja) * 2003-12-18 2010-11-17 Jx日鉱日石エネルギー株式会社 ナノアレイ電極の製造方法およびそれを用いた光電変換素子
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JP5868219B2 (ja) * 2012-02-29 2016-02-24 株式会社フジキン 流体制御装置
KR101751396B1 (ko) * 2012-06-22 2017-06-28 애플 인크. 백색으로 보이는 양극산화 필름 및 이를 형성하기 위한 방법
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US9812395B2 (en) * 2014-10-07 2017-11-07 Taiwan Semiconductor Manufacturing Company Limited & National Taiwan University Methods of forming an interconnect structure using a self-ending anodic oxidation
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Also Published As

Publication number Publication date
EP1020545A3 (en) 2006-03-22
US20030001150A1 (en) 2003-01-02
US6464853B1 (en) 2002-10-15
JP2000254900A (ja) 2000-09-19
EP1020545A2 (en) 2000-07-19
US6790787B2 (en) 2004-09-14

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