JP4139548B2 - ポジ型フォトレジスト組成物 - Google Patents

ポジ型フォトレジスト組成物 Download PDF

Info

Publication number
JP4139548B2
JP4139548B2 JP2000105299A JP2000105299A JP4139548B2 JP 4139548 B2 JP4139548 B2 JP 4139548B2 JP 2000105299 A JP2000105299 A JP 2000105299A JP 2000105299 A JP2000105299 A JP 2000105299A JP 4139548 B2 JP4139548 B2 JP 4139548B2
Authority
JP
Japan
Prior art keywords
group
formula
general formula
photoresist composition
positive photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000105299A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001290272A (ja
JP2001290272A5 (https=
Inventor
知也 佐々木
一良 水谷
昭一郎 安波
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2000105299A priority Critical patent/JP4139548B2/ja
Priority to TW090108294A priority patent/TW591337B/zh
Priority to KR1020010018175A priority patent/KR100739423B1/ko
Priority to US09/826,850 priority patent/US6555289B2/en
Publication of JP2001290272A publication Critical patent/JP2001290272A/ja
Publication of JP2001290272A5 publication Critical patent/JP2001290272A5/ja
Application granted granted Critical
Publication of JP4139548B2 publication Critical patent/JP4139548B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/107—Polyamide or polyurethane
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/108—Polyolefin or halogen containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/115—Cationic or anionic

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
JP2000105299A 2000-04-06 2000-04-06 ポジ型フォトレジスト組成物 Expired - Fee Related JP4139548B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2000105299A JP4139548B2 (ja) 2000-04-06 2000-04-06 ポジ型フォトレジスト組成物
TW090108294A TW591337B (en) 2000-04-06 2001-04-06 Positive photoresist composition
KR1020010018175A KR100739423B1 (ko) 2000-04-06 2001-04-06 포지티브 포토레지스트 조성물
US09/826,850 US6555289B2 (en) 2000-04-06 2001-04-06 Positive photoresist composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000105299A JP4139548B2 (ja) 2000-04-06 2000-04-06 ポジ型フォトレジスト組成物

Publications (3)

Publication Number Publication Date
JP2001290272A JP2001290272A (ja) 2001-10-19
JP2001290272A5 JP2001290272A5 (https=) 2006-01-12
JP4139548B2 true JP4139548B2 (ja) 2008-08-27

Family

ID=18618688

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000105299A Expired - Fee Related JP4139548B2 (ja) 2000-04-06 2000-04-06 ポジ型フォトレジスト組成物

Country Status (4)

Country Link
US (1) US6555289B2 (https=)
JP (1) JP4139548B2 (https=)
KR (1) KR100739423B1 (https=)
TW (1) TW591337B (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3895224B2 (ja) * 2001-12-03 2007-03-22 東京応化工業株式会社 ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法
DE10208754B4 (de) * 2002-02-28 2007-03-01 Infineon Technologies Ag Polymermaterial mit niedriger Glastemperatur für die Anwendung in chemisch verstärkten Fotoresists für die Halbleiterfertigung
US7232638B2 (en) * 2002-05-02 2007-06-19 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
DE10246546B4 (de) * 2002-09-30 2006-10-05 Infineon Technologies Ag Verwendung eines Resistsystems und Lithographieverfahren zur Herstellung von Halbleiterbauelementen
US7285368B2 (en) * 2003-06-12 2007-10-23 Shin-Etsu Chemical Co., Ltd. Polymerizable ester having sulfonamide structure, polymer, resist composition and patterning process
JP2005031233A (ja) * 2003-07-09 2005-02-03 Tokyo Ohka Kogyo Co Ltd レジスト組成物、積層体、及びレジストパターン形成方法
KR100561842B1 (ko) * 2003-08-25 2006-03-16 삼성전자주식회사 단량체 광산발생제 조성물, 상기 조성물로 코팅된 기판,상기 단량체 광산발생제 조성물을 이용하여 기판상에서화합물을 합성하는 방법 및 상기 방법에 의하여 제조된마이크로어레이
US7488565B2 (en) * 2003-10-01 2009-02-10 Chevron U.S.A. Inc. Photoresist compositions comprising diamondoid derivatives
US7088010B2 (en) 2003-12-18 2006-08-08 Intel Corporation Chip packaging compositions, packages and systems made therewith, and methods of making same
JP4448705B2 (ja) * 2004-02-05 2010-04-14 富士フイルム株式会社 感光性組成物及び該感光性組成物を用いたパターン形成方法
US7947421B2 (en) * 2005-01-24 2011-05-24 Fujifilm Corporation Positive resist composition for immersion exposure and pattern-forming method using the same
TWI403843B (zh) 2005-09-13 2013-08-01 Fujifilm Corp 正型光阻組成物及使用它之圖案形成方法
US7566527B2 (en) * 2007-06-27 2009-07-28 International Business Machines Corporation Fused aromatic structures and methods for photolithographic applications
JP5212063B2 (ja) * 2007-12-27 2013-06-19 住友化学株式会社 感光性樹脂組成物
TWI816671B (zh) 2017-04-25 2023-10-01 德商馬克專利公司 用於產生底切圖樣輪廓之負型光阻調配物以及使光阻組合物成像之方法和用於使基板上之圖樣化光阻劑金屬化之剝離方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE59108086D1 (de) 1990-12-20 1996-09-19 Siemens Ag Photoresist
KR100360395B1 (ko) * 1996-01-18 2003-03-06 삼성전자 주식회사 화학 증폭형 레지스트용 베이스 수지
KR100466301B1 (ko) * 1996-04-03 2005-09-28 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨 포토레지스트조성물
KR19980026098A (ko) * 1996-10-07 1998-07-15 김광호 ArF용 실리콘 함유 포토레지스트 조성물
DE59808434D1 (de) 1997-11-28 2003-06-26 Infineon Technologies Ag Chemisch verstärkter Resist für die Elektronenstrahllithographie
US6159653A (en) * 1998-04-14 2000-12-12 Arch Specialty Chemicals, Inc. Production of acetal derivatized hydroxyl aromatic polymers and their use in radiation sensitive formulations
EP0952166B1 (de) * 1998-04-24 2003-06-25 Infineon Technologies AG Filmbildende Polymere
JPH11338151A (ja) * 1998-05-28 1999-12-10 Fuji Photo Film Co Ltd ポジ型感光性組成物
US6165682A (en) * 1999-09-22 2000-12-26 Arch Specialty Chemicals, Inc. Radiation sensitive copolymers, photoresist compositions thereof and deep UV bilayer systems thereof
KR20040040187A (ko) * 2002-11-06 2004-05-12 엘지전자 주식회사 전기압력밥솥의 오븐 잠금 장치

Also Published As

Publication number Publication date
JP2001290272A (ja) 2001-10-19
US20020048720A1 (en) 2002-04-25
KR100739423B1 (ko) 2007-07-13
US6555289B2 (en) 2003-04-29
TW591337B (en) 2004-06-11
KR20010100871A (ko) 2001-11-14

Similar Documents

Publication Publication Date Title
JP4139548B2 (ja) ポジ型フォトレジスト組成物
KR100788806B1 (ko) 포지티브 포토레지스트 조성물
US6528229B2 (en) Positive photoresist composition
JP2001272784A (ja) ポジ型フォトレジスト組成物
JP2001125272A (ja) ポジ型フォトレジスト組成物
JP2001194789A (ja) ポジ型フォトレジスト組成物
JP2002091005A (ja) ポジ型フォトレジスト組成物
JP2001215707A (ja) ポジ型フォトレジスト組成物
JP2001117234A (ja) 遠紫外線露光用ポジ型フォトレジスト組成物
JP4190141B2 (ja) ポジ型フォトレジスト組成物
JP3963623B2 (ja) ポジ型フォトレジスト組成物
JP4037018B2 (ja) ポジ型フォトレジスト組成物
JP4105354B2 (ja) ポジ型フォトレジスト組成物
JP2001147536A (ja) ポジ型フォトレジスト組成物
JP2001159812A (ja) ポジ型フォトレジスト組成物
JP2001142210A (ja) ポジ型フォトレジスト組成物
JP2001235869A (ja) 遠紫外線露光用ポジ型フォトレジスト組成物
JP2002174903A (ja) ポジ型フォトレジスト組成物
JP2001166482A (ja) ポジ型フォトレジスト組成物
JP2001201855A (ja) 遠紫外線露光用ポジ型フォトレジスト組成物
JP2001194788A (ja) ポジ型フォトレジスト組成物
JP2001188349A (ja) フォトレジスト組成物
JP2001083707A (ja) ポジ型フォトレジスト組成物
JP2001290273A (ja) ポジ型フォトレジスト組成物
JP2001188348A (ja) ポジ型フォトレジスト組成物

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20051114

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20051114

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20060324

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20061124

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20071108

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20071115

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20071122

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20080107

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080312

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080423

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20080521

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20080609

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110613

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110613

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120613

Year of fee payment: 4

LAPS Cancellation because of no payment of annual fees