JP2001290272A5 - - Google Patents
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- JP2001290272A5 JP2001290272A5 JP2000105299A JP2000105299A JP2001290272A5 JP 2001290272 A5 JP2001290272 A5 JP 2001290272A5 JP 2000105299 A JP2000105299 A JP 2000105299A JP 2000105299 A JP2000105299 A JP 2000105299A JP 2001290272 A5 JP2001290272 A5 JP 2001290272A5
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- 125000000217 alkyl group Chemical group 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 7
- 125000004093 cyano group Chemical group *C#N 0.000 description 7
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 7
- 241000689227 Cora <basidiomycete fungus> Species 0.000 description 5
- 239000002253 acid Substances 0.000 description 5
- 125000000524 functional group Chemical group 0.000 description 3
- 125000005647 linker group Chemical group 0.000 description 3
- 125000004430 oxygen atom Chemical group O* 0.000 description 3
- 125000001424 substituent group Chemical group 0.000 description 3
- 125000003545 alkoxy group Chemical group 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 125000001309 chloro group Chemical group Cl* 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 125000000547 substituted alkyl group Chemical group 0.000 description 2
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical group C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 150000007514 bases Chemical class 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000001188 haloalkyl group Chemical group 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 150000003951 lactams Chemical group 0.000 description 1
- 125000000686 lactone group Chemical group 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 125000005389 trialkylsiloxy group Chemical group 0.000 description 1
- 125000004665 trialkylsilyl group Chemical group 0.000 description 1
- 125000004953 trihalomethyl group Chemical group 0.000 description 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000105299A JP4139548B2 (ja) | 2000-04-06 | 2000-04-06 | ポジ型フォトレジスト組成物 |
| TW090108294A TW591337B (en) | 2000-04-06 | 2001-04-06 | Positive photoresist composition |
| KR1020010018175A KR100739423B1 (ko) | 2000-04-06 | 2001-04-06 | 포지티브 포토레지스트 조성물 |
| US09/826,850 US6555289B2 (en) | 2000-04-06 | 2001-04-06 | Positive photoresist composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000105299A JP4139548B2 (ja) | 2000-04-06 | 2000-04-06 | ポジ型フォトレジスト組成物 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001290272A JP2001290272A (ja) | 2001-10-19 |
| JP2001290272A5 true JP2001290272A5 (https=) | 2006-01-12 |
| JP4139548B2 JP4139548B2 (ja) | 2008-08-27 |
Family
ID=18618688
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000105299A Expired - Fee Related JP4139548B2 (ja) | 2000-04-06 | 2000-04-06 | ポジ型フォトレジスト組成物 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6555289B2 (https=) |
| JP (1) | JP4139548B2 (https=) |
| KR (1) | KR100739423B1 (https=) |
| TW (1) | TW591337B (https=) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3895224B2 (ja) * | 2001-12-03 | 2007-03-22 | 東京応化工業株式会社 | ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法 |
| DE10208754B4 (de) * | 2002-02-28 | 2007-03-01 | Infineon Technologies Ag | Polymermaterial mit niedriger Glastemperatur für die Anwendung in chemisch verstärkten Fotoresists für die Halbleiterfertigung |
| US7232638B2 (en) * | 2002-05-02 | 2007-06-19 | Shin-Etsu Chemical Co., Ltd. | Resist composition and patterning process |
| DE10246546B4 (de) * | 2002-09-30 | 2006-10-05 | Infineon Technologies Ag | Verwendung eines Resistsystems und Lithographieverfahren zur Herstellung von Halbleiterbauelementen |
| US7285368B2 (en) * | 2003-06-12 | 2007-10-23 | Shin-Etsu Chemical Co., Ltd. | Polymerizable ester having sulfonamide structure, polymer, resist composition and patterning process |
| JP2005031233A (ja) * | 2003-07-09 | 2005-02-03 | Tokyo Ohka Kogyo Co Ltd | レジスト組成物、積層体、及びレジストパターン形成方法 |
| KR100561842B1 (ko) * | 2003-08-25 | 2006-03-16 | 삼성전자주식회사 | 단량체 광산발생제 조성물, 상기 조성물로 코팅된 기판,상기 단량체 광산발생제 조성물을 이용하여 기판상에서화합물을 합성하는 방법 및 상기 방법에 의하여 제조된마이크로어레이 |
| US7488565B2 (en) * | 2003-10-01 | 2009-02-10 | Chevron U.S.A. Inc. | Photoresist compositions comprising diamondoid derivatives |
| US7088010B2 (en) | 2003-12-18 | 2006-08-08 | Intel Corporation | Chip packaging compositions, packages and systems made therewith, and methods of making same |
| JP4448705B2 (ja) * | 2004-02-05 | 2010-04-14 | 富士フイルム株式会社 | 感光性組成物及び該感光性組成物を用いたパターン形成方法 |
| US7947421B2 (en) * | 2005-01-24 | 2011-05-24 | Fujifilm Corporation | Positive resist composition for immersion exposure and pattern-forming method using the same |
| TWI403843B (zh) | 2005-09-13 | 2013-08-01 | Fujifilm Corp | 正型光阻組成物及使用它之圖案形成方法 |
| US7566527B2 (en) * | 2007-06-27 | 2009-07-28 | International Business Machines Corporation | Fused aromatic structures and methods for photolithographic applications |
| JP5212063B2 (ja) * | 2007-12-27 | 2013-06-19 | 住友化学株式会社 | 感光性樹脂組成物 |
| TWI816671B (zh) | 2017-04-25 | 2023-10-01 | 德商馬克專利公司 | 用於產生底切圖樣輪廓之負型光阻調配物以及使光阻組合物成像之方法和用於使基板上之圖樣化光阻劑金屬化之剝離方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE59108086D1 (de) | 1990-12-20 | 1996-09-19 | Siemens Ag | Photoresist |
| KR100360395B1 (ko) * | 1996-01-18 | 2003-03-06 | 삼성전자 주식회사 | 화학 증폭형 레지스트용 베이스 수지 |
| KR100466301B1 (ko) * | 1996-04-03 | 2005-09-28 | 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨 | 포토레지스트조성물 |
| KR19980026098A (ko) * | 1996-10-07 | 1998-07-15 | 김광호 | ArF용 실리콘 함유 포토레지스트 조성물 |
| DE59808434D1 (de) | 1997-11-28 | 2003-06-26 | Infineon Technologies Ag | Chemisch verstärkter Resist für die Elektronenstrahllithographie |
| US6159653A (en) * | 1998-04-14 | 2000-12-12 | Arch Specialty Chemicals, Inc. | Production of acetal derivatized hydroxyl aromatic polymers and their use in radiation sensitive formulations |
| EP0952166B1 (de) * | 1998-04-24 | 2003-06-25 | Infineon Technologies AG | Filmbildende Polymere |
| JPH11338151A (ja) * | 1998-05-28 | 1999-12-10 | Fuji Photo Film Co Ltd | ポジ型感光性組成物 |
| US6165682A (en) * | 1999-09-22 | 2000-12-26 | Arch Specialty Chemicals, Inc. | Radiation sensitive copolymers, photoresist compositions thereof and deep UV bilayer systems thereof |
| KR20040040187A (ko) * | 2002-11-06 | 2004-05-12 | 엘지전자 주식회사 | 전기압력밥솥의 오븐 잠금 장치 |
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2000
- 2000-04-06 JP JP2000105299A patent/JP4139548B2/ja not_active Expired - Fee Related
-
2001
- 2001-04-06 TW TW090108294A patent/TW591337B/zh not_active IP Right Cessation
- 2001-04-06 US US09/826,850 patent/US6555289B2/en not_active Expired - Fee Related
- 2001-04-06 KR KR1020010018175A patent/KR100739423B1/ko not_active Expired - Fee Related