JP4122548B2 - 炭化珪素単結晶の製造方法 - Google Patents

炭化珪素単結晶の製造方法 Download PDF

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Publication number
JP4122548B2
JP4122548B2 JP28222397A JP28222397A JP4122548B2 JP 4122548 B2 JP4122548 B2 JP 4122548B2 JP 28222397 A JP28222397 A JP 28222397A JP 28222397 A JP28222397 A JP 28222397A JP 4122548 B2 JP4122548 B2 JP 4122548B2
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Prior art keywords
crucible
silicon carbide
single crystal
crystal
raw material
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Expired - Lifetime
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JP28222397A
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English (en)
Japanese (ja)
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JPH11116398A (ja
JPH11116398A5 (enExample
Inventor
勇 山本
邦雄 小巻
幸太郎 矢野
直樹 小柳
茂弘 西野
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Resonac Holdings Corp
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Showa Denko KK
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Priority to JP28222397A priority Critical patent/JP4122548B2/ja
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Publication of JPH11116398A5 publication Critical patent/JPH11116398A5/ja
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  • Crystals, And After-Treatments Of Crystals (AREA)
JP28222397A 1997-10-15 1997-10-15 炭化珪素単結晶の製造方法 Expired - Lifetime JP4122548B2 (ja)

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JP28222397A JP4122548B2 (ja) 1997-10-15 1997-10-15 炭化珪素単結晶の製造方法

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JP28222397A JP4122548B2 (ja) 1997-10-15 1997-10-15 炭化珪素単結晶の製造方法

Related Child Applications (1)

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JP2008015928A Division JP4819069B2 (ja) 2008-01-28 2008-01-28 炭化珪素単結晶の製造方法

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JPH11116398A JPH11116398A (ja) 1999-04-27
JPH11116398A5 JPH11116398A5 (enExample) 2005-03-17
JP4122548B2 true JP4122548B2 (ja) 2008-07-23

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JP28222397A Expired - Lifetime JP4122548B2 (ja) 1997-10-15 1997-10-15 炭化珪素単結晶の製造方法

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Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6547877B2 (en) * 1996-01-22 2003-04-15 The Fox Group, Inc. Tantalum crucible fabrication and treatment
US6537371B2 (en) * 1997-01-22 2003-03-25 The Fox Group, Inc. Niobium crucible fabrication and treatment
US6562130B2 (en) * 1997-01-22 2003-05-13 The Fox Group, Inc. Low defect axially grown single crystal silicon carbide
JP4691292B2 (ja) * 1999-07-07 2011-06-01 エスアイクリスタル アクチエンゲゼルシャフト ＳｉＣ種結晶の外周壁を有する種結晶ホルダ
WO2001004389A1 (de) * 1999-07-07 2001-01-18 Siemens Aktiengesellschaft Vorrichtung zur sublimationszüchtung eines sic-einkristalls mit folienausgekleidetem tiegel
US6562131B2 (en) * 1999-07-20 2003-05-13 The Fox Group, Inc. Method for growing single crystal silicon carbide
US6824611B1 (en) * 1999-10-08 2004-11-30 Cree, Inc. Method and apparatus for growing silicon carbide crystals
US6514338B2 (en) * 1999-12-27 2003-02-04 Showa Denko Kabushiki Kaisha Method and apparatus for producing silicon carbide single crystal
US7056383B2 (en) 2004-02-13 2006-06-06 The Fox Group, Inc. Tantalum based crucible
JP2006001787A (ja) * 2004-06-17 2006-01-05 Hitachi Chem Co Ltd フッ化カルシウム結晶育成ルツボ、フッ化カルシウム結晶の製造方法及びフッ化カルシウム結晶
JP4522898B2 (ja) * 2005-03-25 2010-08-11 日本碍子株式会社 単結晶製造装置
CN101466878B (zh) 2006-06-16 2012-06-13 住友电气工业株式会社 第ⅲ族氮化物单晶及其生长方法
JP2008120617A (ja) * 2006-11-09 2008-05-29 Bridgestone Corp 炭化珪素単結晶の製造方法
JP5213096B2 (ja) * 2007-03-23 2013-06-19 学校法人関西学院 単結晶炭化ケイ素の液相エピタキシャル成長方法、単結晶炭化ケイ素基板の製造方法、及び単結晶炭化ケイ素基板
JP5163445B2 (ja) * 2008-11-25 2013-03-13 住友電気工業株式会社 結晶製造方法
US8535600B2 (en) 2009-03-23 2013-09-17 Kabushiki Kaisha Toyota Chuo Kenkyusho High temperature-resistant article, method for producing the same, and high temperature-resistant adhesive
WO2013022417A1 (en) * 2011-08-05 2013-02-14 Crucible Intellectual Property Llc Crucible materials
JP5548174B2 (ja) * 2011-09-12 2014-07-16 東洋炭素株式会社 ＰＩＴ炭素芯ＴａＣチューブの製造方法、及び、ＰＩＴ炭素芯ＴａＣチューブ
JP2013189355A (ja) * 2012-03-15 2013-09-26 Sumitomo Electric Ind Ltd 炭化珪素単結晶の製造方法および製造装置
JP5549722B2 (ja) * 2012-10-26 2014-07-16 住友電気工業株式会社 結晶製造方法
CN108070909A (zh) * 2016-11-17 2018-05-25 上海新昇半导体科技有限公司 坩埚、坩埚的制备方法及4H-SiC晶体的生长方法
KR102675266B1 (ko) 2017-12-04 2024-06-14 신에쓰 가가꾸 고교 가부시끼가이샤 탄화탄탈 피복 탄소 재료 및 그 제조 방법, 반도체 단결정 제조 장치용 부재
JP6609300B2 (ja) * 2017-12-21 2019-11-20 國家中山科學研究院 特定形状の炭化ケイ素の育成装置
CN113122921A (zh) * 2020-06-05 2021-07-16 北京世纪金光半导体有限公司 一种生长低碳包裹物大尺寸高纯单晶的装置及方法
CN116695089B (zh) * 2023-08-09 2023-10-24 通威微电子有限公司 中继环碳化钽镀膜装置和方法

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