JP4115654B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4115654B2
JP4115654B2 JP2000130958A JP2000130958A JP4115654B2 JP 4115654 B2 JP4115654 B2 JP 4115654B2 JP 2000130958 A JP2000130958 A JP 2000130958A JP 2000130958 A JP2000130958 A JP 2000130958A JP 4115654 B2 JP4115654 B2 JP 4115654B2
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Japan
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film
region
gate electrode
semiconductor device
type impurity
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Expired - Fee Related
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JP2000130958A
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Japanese (ja)
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JP2001094115A (ja
JP2001094115A5 (enExample
Inventor
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2000130958A priority Critical patent/JP4115654B2/ja
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Publication of JP2001094115A5 publication Critical patent/JP2001094115A5/ja
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  • Liquid Crystal (AREA)
  • Drying Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
JP2000130958A 1999-04-30 2000-04-28 半導体装置の作製方法 Expired - Fee Related JP4115654B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000130958A JP4115654B2 (ja) 1999-04-30 2000-04-28 半導体装置の作製方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP11-124924 1999-04-30
JP12492499 1999-04-30
JP20696199 1999-07-22
JP11-206961 1999-07-22
JP2000130958A JP4115654B2 (ja) 1999-04-30 2000-04-28 半導体装置の作製方法

Related Child Applications (1)

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JP2004233913A Division JP4244208B2 (ja) 1999-04-30 2004-08-10 半導体装置

Publications (3)

Publication Number Publication Date
JP2001094115A JP2001094115A (ja) 2001-04-06
JP2001094115A5 JP2001094115A5 (enExample) 2007-06-14
JP4115654B2 true JP4115654B2 (ja) 2008-07-09

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JP2000130958A Expired - Fee Related JP4115654B2 (ja) 1999-04-30 2000-04-28 半導体装置の作製方法

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Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1049167A3 (en) 1999-04-30 2007-10-24 Sel Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP4002410B2 (ja) 2001-06-22 2007-10-31 日本電気株式会社 アクティブマトリックス型液晶表示装置の製造方法
JP2003045874A (ja) 2001-07-27 2003-02-14 Semiconductor Energy Lab Co Ltd 金属配線およびその作製方法、並びに金属配線基板およびその作製方法
JP5352046B2 (ja) * 2005-06-22 2013-11-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101267499B1 (ko) * 2005-08-18 2013-05-31 삼성디스플레이 주식회사 박막 트랜지스터 기판의 제조 방법 및 그에 의해 제조된박막 트랜지스터
JP5236903B2 (ja) * 2006-06-29 2013-07-17 株式会社半導体エネルギー研究所 表示装置及び表示装置の作製方法
US7781768B2 (en) 2006-06-29 2010-08-24 Semiconductor Energy Laboratory Co., Ltd. Display device, method for manufacturing the same, and electronic device having the same
KR101460868B1 (ko) 2009-07-10 2014-11-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN102498570B (zh) * 2009-09-04 2016-02-10 株式会社半导体能源研究所 发光装置及其制造方法
JP2012142571A (ja) * 2011-12-26 2012-07-26 Semiconductor Energy Lab Co Ltd 半導体装置
JP5799132B2 (ja) * 2014-05-02 2015-10-21 株式会社半導体エネルギー研究所 表示装置、表示モジュール、及び電子機器
JP6087970B2 (ja) * 2015-03-26 2017-03-01 株式会社半導体エネルギー研究所 表示装置、表示モジュール及び電子機器
KR102351121B1 (ko) * 2015-04-24 2022-01-17 삼성디스플레이 주식회사 플렉서블 기판 및 그의 제조방법, 플렉서블 기판을 구비한 플렉서블 표시장치
JP2016054306A (ja) * 2015-11-13 2016-04-14 株式会社半導体エネルギー研究所 表示装置、表示モジュール及び電子機器
KR20250050134A (ko) * 2015-11-20 2025-04-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 상기 반도체 장치를 가지는 표시 장치, 및 상기 반도체 장치를 가지는 전자 기기
CN119174386B (zh) * 2024-11-01 2025-12-09 兰州大学 一种用于植物种子241Am-9Be源中子辐照的剂量分配装置

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JP2001094115A (ja) 2001-04-06

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