JP4102032B2 - ポジ型レジスト組成物 - Google Patents

ポジ型レジスト組成物 Download PDF

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Publication number
JP4102032B2
JP4102032B2 JP2001068850A JP2001068850A JP4102032B2 JP 4102032 B2 JP4102032 B2 JP 4102032B2 JP 2001068850 A JP2001068850 A JP 2001068850A JP 2001068850 A JP2001068850 A JP 2001068850A JP 4102032 B2 JP4102032 B2 JP 4102032B2
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JP
Japan
Prior art keywords
group
hydrocarbon group
carbon atoms
general formula
alicyclic hydrocarbon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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JP2001068850A
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English (en)
Japanese (ja)
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JP2002268223A (ja
JP2002268223A5 (enExample
Inventor
健一郎 佐藤
邦彦 児玉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
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Fujifilm Corp
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Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2001068850A priority Critical patent/JP4102032B2/ja
Priority to US10/093,411 priority patent/US6777160B2/en
Priority to KR1020020013339A priority patent/KR100773045B1/ko
Priority to TW091104604A priority patent/TW538317B/zh
Publication of JP2002268223A publication Critical patent/JP2002268223A/ja
Publication of JP2002268223A5 publication Critical patent/JP2002268223A5/ja
Application granted granted Critical
Publication of JP4102032B2 publication Critical patent/JP4102032B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Compositions Of Macromolecular Compounds (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
JP2001068850A 2001-03-12 2001-03-12 ポジ型レジスト組成物 Expired - Lifetime JP4102032B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2001068850A JP4102032B2 (ja) 2001-03-12 2001-03-12 ポジ型レジスト組成物
US10/093,411 US6777160B2 (en) 2001-03-12 2002-03-11 Positive-working resist composition
KR1020020013339A KR100773045B1 (ko) 2001-03-12 2002-03-12 포지티브 레지스트 조성물
TW091104604A TW538317B (en) 2001-03-12 2002-03-12 Positive-working resist composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001068850A JP4102032B2 (ja) 2001-03-12 2001-03-12 ポジ型レジスト組成物

Publications (3)

Publication Number Publication Date
JP2002268223A JP2002268223A (ja) 2002-09-18
JP2002268223A5 JP2002268223A5 (enExample) 2006-01-19
JP4102032B2 true JP4102032B2 (ja) 2008-06-18

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Family Applications (1)

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JP2001068850A Expired - Lifetime JP4102032B2 (ja) 2001-03-12 2001-03-12 ポジ型レジスト組成物

Country Status (1)

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JP (1) JP4102032B2 (enExample)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4193478B2 (ja) * 2001-12-03 2008-12-10 住友化学株式会社 スルホニウム塩及びその用途
US7303852B2 (en) 2001-12-27 2007-12-04 Shin-Etsu Chemical Co., Ltd. Photoacid generating compounds, chemically amplified positive resist materials, and pattern forming method
JP2004085657A (ja) * 2002-08-23 2004-03-18 Toray Ind Inc ポジ型感放射線性組成物およびこれを用いたレジストパターンの製造方法
JP4448705B2 (ja) 2004-02-05 2010-04-14 富士フイルム株式会社 感光性組成物及び該感光性組成物を用いたパターン形成方法
JP4469692B2 (ja) 2004-09-14 2010-05-26 富士フイルム株式会社 感光性組成物、該感光性組成物に用いられる化合物及び該感光性組成物を用いたパターン形成方法
US7960087B2 (en) 2005-03-11 2011-06-14 Fujifilm Corporation Positive photosensitive composition and pattern-forming method using the same
JP4579019B2 (ja) * 2005-03-17 2010-11-10 富士フイルム株式会社 ポジ型レジスト組成物及び該レジスト組成物を用いたパターン形成方法
JP4724465B2 (ja) 2005-05-23 2011-07-13 富士フイルム株式会社 感光性組成物及び該感光性組成物を用いたパターン形成方法
JP4677293B2 (ja) * 2005-06-20 2011-04-27 富士フイルム株式会社 ポジ型感光性組成物及び該ポジ型感光性組成物を用いたパターン形成方法
JP2007003619A (ja) 2005-06-21 2007-01-11 Fujifilm Holdings Corp 感光性組成物、該感光性組成物を用いたパターン形成方法及び該感光性組成物に用いる化合物
JP4562628B2 (ja) 2005-09-20 2010-10-13 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
US8426101B2 (en) 2005-12-21 2013-04-23 Fujifilm Corporation Photosensitive composition, pattern-forming method using the photosensitve composition and compound in the photosensitive composition
US8404427B2 (en) 2005-12-28 2013-03-26 Fujifilm Corporation Photosensitive composition, and pattern-forming method and resist film using the photosensitive composition
JP4866605B2 (ja) 2005-12-28 2012-02-01 富士フイルム株式会社 感光性組成物、該感光性組成物を用いたパターン形成方法及び該感光性組成物に用いられる化合物
JP4682057B2 (ja) 2006-02-20 2011-05-11 富士フイルム株式会社 感光性組成物、該感光性組成物を用いたパターン形成方法及び該感光性組成物に用いられる化合物
JP4682064B2 (ja) 2006-03-09 2011-05-11 富士フイルム株式会社 感光性組成物、該組成物を用いたパターン形成方法及び該組成物に用いる化合物
US8003294B2 (en) 2007-03-09 2011-08-23 Fujifilm Corporation Photosensitive composition, compound used for photosensitive composition and pattern-forming method using photosensitive composition
JP5358102B2 (ja) * 2007-03-09 2013-12-04 富士フイルム株式会社 感光性組成物、該感光性組成物に用いられる化合物及び該感光性組成物を用いたパターン形成方法
JP5159141B2 (ja) * 2007-03-30 2013-03-06 富士フイルム株式会社 インク組成物、インクジェット記録方法、印刷物、平版印刷版の作製方法及び平版印刷版
US8580486B2 (en) 2008-03-13 2013-11-12 Central Glass Company, Limited Salt having fluorine-containing carbanion structure, derivative thereof, photoacid generator, resist material using the photoacid generator, and pattern forming method
JP2010159256A (ja) * 2010-01-18 2010-07-22 Fujifilm Corp 感光性組成物に有用な酸及びその塩
JP2011008293A (ja) * 2010-09-15 2011-01-13 Fujifilm Corp ポジ型感光性組成物及び該ポジ型感光性組成物を用いたパターン形成方法
JP6240409B2 (ja) * 2013-05-31 2017-11-29 サンアプロ株式会社 スルホニウム塩および光酸発生剤
JP6482286B2 (ja) * 2015-01-16 2019-03-13 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
KR102554985B1 (ko) 2015-01-16 2023-07-12 도오꾜오까고오교 가부시끼가이샤 레지스트 조성물 및 레지스트 패턴 형성 방법
JP6484500B2 (ja) * 2015-05-11 2019-03-13 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
US10324377B2 (en) 2015-06-15 2019-06-18 Tokyo Ohka Kogyo Co., Ltd. Resist composition and method of forming resist pattern
JP7373307B2 (ja) 2018-06-20 2023-11-02 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
WO2020121967A1 (ja) 2018-12-12 2020-06-18 Jsr株式会社 感光性樹脂組成物、レジストパターン膜の製造方法、およびメッキ造形物の製造方法
US12174538B2 (en) 2019-03-27 2024-12-24 Jsr Corporation Photosensitive resin composition, method for producing resist pattern film, method for producing plated formed product, and method for producing tin-silver plated-formed product

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5554664A (en) * 1995-03-06 1996-09-10 Minnesota Mining And Manufacturing Company Energy-activatable salts with fluorocarbon anions
CA2187046A1 (fr) * 1996-10-03 1998-04-03 Alain Vallee Sulfonylimidures et sulfonylmethylures, leur utilisation comme photoinitiateur
JP3976109B2 (ja) * 1999-06-30 2007-09-12 富士フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物
JP2001042535A (ja) * 1999-07-26 2001-02-16 Fuji Photo Film Co Ltd 遠紫外線露光用ポジ型フォトレジスト組成物
FR2809829B1 (fr) * 2000-06-05 2002-07-26 Rhodia Chimie Sa Nouvelle composition photosensible pour la fabrication de photoresist

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