JP4092083B2 - 電子線又はｘ線用ネガ型レジスト組成物 - Google Patents
電子線又はｘ線用ネガ型レジスト組成物 Download PDFInfo
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- JP4092083B2 JP4092083B2 JP2001080858A JP2001080858A JP4092083B2 JP 4092083 B2 JP4092083 B2 JP 4092083B2 JP 2001080858 A JP2001080858 A JP 2001080858A JP 2001080858 A JP2001080858 A JP 2001080858A JP 4092083 B2 JP4092083 B2 JP 4092083B2
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- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 4
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- 150000004901 trioxanes Chemical class 0.000 description 1
- 150000003672 ureas Chemical class 0.000 description 1
- KOZCZZVUFDCZGG-UHFFFAOYSA-N vinyl benzoate Chemical compound C=COC(=O)C1=CC=CC=C1 KOZCZZVUFDCZGG-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/115—Cationic or anionic
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001080858A JP4092083B2 (ja) | 2001-03-21 | 2001-03-21 | 電子線又はｘ線用ネガ型レジスト組成物 |
| TW091105074A TWI251121B (en) | 2001-03-21 | 2002-03-18 | Negative-working resist composition for electron beams or X-rays |
| US10/101,178 US6887647B2 (en) | 2001-03-21 | 2002-03-20 | Negative-working resist composition for electron beams or x-rays |
| KR1020020015120A KR100891133B1 (ko) | 2001-03-21 | 2002-03-20 | 전자선 또는 엑스선용 네거티브 레지스트 조성물 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001080858A JP4092083B2 (ja) | 2001-03-21 | 2001-03-21 | 電子線又はｘ線用ネガ型レジスト組成物 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002278068A JP2002278068A (ja) | 2002-09-27 |
| JP2002278068A5 JP2002278068A5 (US07494231-20090224-C00006.png) | 2006-01-19 |
| JP4092083B2 true JP4092083B2 (ja) | 2008-05-28 |
Family
ID=18937063
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001080858A Expired - Fee Related JP4092083B2 (ja) | 2001-03-21 | 2001-03-21 | 電子線又はｘ線用ネガ型レジスト組成物 |
Country Status (4)
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6872504B2 (en) * | 2002-12-10 | 2005-03-29 | Massachusetts Institute Of Technology | High sensitivity X-ray photoresist |
| US20100178611A1 (en) * | 2006-04-13 | 2010-07-15 | Nuflare Technology, Inc. | Lithography method of electron beam |
| JP4958821B2 (ja) * | 2007-03-29 | 2012-06-20 | 富士フイルム株式会社 | ネガ型レジスト組成物及びそれを用いたパターン形成方法 |
| US20080241745A1 (en) * | 2007-03-29 | 2008-10-02 | Fujifilm Corporation | Negative resist composition and pattern forming method using the same |
| JP4678383B2 (ja) * | 2007-03-29 | 2011-04-27 | 信越化学工業株式会社 | 化学増幅ネガ型レジスト組成物及びパターン形成方法 |
| JP5537920B2 (ja) * | 2009-03-26 | 2014-07-02 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、これを用いたレジスト膜、及び、パターン形成方法 |
| JP2011059531A (ja) * | 2009-09-11 | 2011-03-24 | Jsr Corp | 感放射線性樹脂組成物及びパターン形成方法 |
| WO2011104127A1 (en) | 2010-02-24 | 2011-09-01 | Basf Se | Latent acids and their use |
| JP6010564B2 (ja) * | 2014-01-10 | 2016-10-19 | 信越化学工業株式会社 | 化学増幅型ネガ型レジスト組成物及びパターン形成方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3573358B2 (ja) * | 1994-02-25 | 2004-10-06 | クラリアント インターナショナル リミテッド | 放射線感応性組成物 |
| JP3506817B2 (ja) | 1995-07-26 | 2004-03-15 | クラリアント インターナショナル リミテッド | 放射線感応性組成物 |
| JP3991462B2 (ja) * | 1997-08-18 | 2007-10-17 | Ｊｓｒ株式会社 | 感放射線性樹脂組成物 |
| KR100551653B1 (ko) * | 1997-08-18 | 2006-05-25 | 제이에스알 가부시끼가이샤 | 감방사선성수지조성물 |
| US6291129B1 (en) * | 1997-08-29 | 2001-09-18 | Kabushiki Kaisha Toshiba | Monomer, high molecular compound and photosensitive composition |
| TWI263861B (en) * | 1999-03-26 | 2006-10-11 | Shinetsu Chemical Co | Resist material and pattern forming method |
| JP2000310857A (ja) * | 1999-04-28 | 2000-11-07 | Fuji Photo Film Co Ltd | ネガ型電子線又はｘ線レジスト組成物 |
| JP3929653B2 (ja) * | 1999-08-11 | 2007-06-13 | 富士フイルム株式会社 | ネガ型レジスト組成物 |
| JP3982958B2 (ja) * | 1999-08-30 | 2007-09-26 | 富士フイルム株式会社 | ポジ型感光性組成物 |
-
2001
- 2001-03-21 JP JP2001080858A patent/JP4092083B2/ja not_active Expired - Fee Related
-
2002
- 2002-03-18 TW TW091105074A patent/TWI251121B/zh not_active IP Right Cessation
- 2002-03-20 KR KR1020020015120A patent/KR100891133B1/ko not_active IP Right Cessation
- 2002-03-20 US US10/101,178 patent/US6887647B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR20020075264A (ko) | 2002-10-04 |
| KR100891133B1 (ko) | 2009-04-06 |
| JP2002278068A (ja) | 2002-09-27 |
| US6887647B2 (en) | 2005-05-03 |
| TWI251121B (en) | 2006-03-11 |
| US20020192592A1 (en) | 2002-12-19 |
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