JP4087753B2 - ヨウ素およびヨウ素蒸気捕捉剤を含む化学的機械研磨組成物 - Google Patents

ヨウ素およびヨウ素蒸気捕捉剤を含む化学的機械研磨組成物 Download PDF

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Publication number
JP4087753B2
JP4087753B2 JP2003162424A JP2003162424A JP4087753B2 JP 4087753 B2 JP4087753 B2 JP 4087753B2 JP 2003162424 A JP2003162424 A JP 2003162424A JP 2003162424 A JP2003162424 A JP 2003162424A JP 4087753 B2 JP4087753 B2 JP 4087753B2
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chemical mechanical
mechanical polishing
iodine
polishing tool
substrate
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JP2004027224A5 (enExample
JP2004027224A (ja
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サン タオ
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CMC Materials LLC
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Cabot Microelectronics Corp
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2003162424A 2002-06-06 2003-06-06 ヨウ素およびヨウ素蒸気捕捉剤を含む化学的機械研磨組成物 Expired - Fee Related JP4087753B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/165,133 US6641630B1 (en) 2002-06-06 2002-06-06 CMP compositions containing iodine and an iodine vapor-trapping agent

Publications (3)

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JP2004027224A JP2004027224A (ja) 2004-01-29
JP2004027224A5 JP2004027224A5 (enExample) 2006-07-20
JP4087753B2 true JP4087753B2 (ja) 2008-05-21

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JP2003162424A Expired - Fee Related JP4087753B2 (ja) 2002-06-06 2003-06-06 ヨウ素およびヨウ素蒸気捕捉剤を含む化学的機械研磨組成物

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US (1) US6641630B1 (enExample)
JP (1) JP4087753B2 (enExample)
TW (1) TWI236948B (enExample)

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US20020111024A1 (en) * 1996-07-25 2002-08-15 Small Robert J. Chemical mechanical polishing compositions
US7192886B2 (en) * 2002-10-25 2007-03-20 Intersurface Dynamics, Inc. Method for using additives in the caustic etching of silicon for obtaining improved surface characteristics
JP2006066874A (ja) * 2004-07-27 2006-03-09 Asahi Denka Kogyo Kk Ｃｍｐ用研磨組成物および研磨方法
US7161247B2 (en) * 2004-07-28 2007-01-09 Cabot Microelectronics Corporation Polishing composition for noble metals
JP4012180B2 (ja) * 2004-08-06 2007-11-21 株式会社東芝 Ｃｍｐ用スラリー、研磨方法、および半導体装置の製造方法
KR100648264B1 (ko) * 2004-08-17 2006-11-23 삼성전자주식회사 루테늄을 위한 화학적기계적 연마 슬러리, 상기 슬러리를이용한 루테늄에 대한 화학적기계적 연마 방법, 그리고상기 화학적기계적 연마 방법을 이용한 루테늄 전극 형성방법
US7524347B2 (en) * 2004-10-28 2009-04-28 Cabot Microelectronics Corporation CMP composition comprising surfactant
US7608082B2 (en) 2005-01-06 2009-10-27 Tyco Healthcare Group Lp Surgical seal for use in a surgical access apparatus
JPWO2006112377A1 (ja) * 2005-04-14 2008-12-11 三井化学株式会社 研磨材スラリーおよびこれを用いた研磨材
EP1899111A2 (en) * 2005-06-06 2008-03-19 Advanced Technology Materials, Inc. Integrated chemical mechanical polishing composition and process for single platen processing
KR20070012209A (ko) * 2005-07-21 2007-01-25 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물 및 연마 방법
JP4708911B2 (ja) * 2005-08-09 2011-06-22 ニッタ・ハース株式会社 研磨用組成物
US7265055B2 (en) * 2005-10-26 2007-09-04 Cabot Microelectronics Corporation CMP of copper/ruthenium substrates
US7732393B2 (en) * 2006-03-20 2010-06-08 Cabot Microelectronics Corporation Oxidation-stabilized CMP compositions and methods
US7820067B2 (en) * 2006-03-23 2010-10-26 Cabot Microelectronics Corporation Halide anions for metal removal rate control
US8591763B2 (en) * 2006-03-23 2013-11-26 Cabot Microelectronics Corporation Halide anions for metal removal rate control
US7368066B2 (en) * 2006-05-31 2008-05-06 Cabot Microelectronics Corporation Gold CMP composition and method
US7776230B2 (en) * 2006-08-30 2010-08-17 Cabot Microelectronics Corporation CMP system utilizing halogen adduct
US7922926B2 (en) 2008-01-08 2011-04-12 Cabot Microelectronics Corporation Composition and method for polishing nickel-phosphorous-coated aluminum hard disks
JP5314329B2 (ja) * 2008-06-12 2013-10-16 富士フイルム株式会社 研磨液
WO2010074002A1 (ja) * 2008-12-22 2010-07-01 花王株式会社 磁気ディスク基板用研磨液組成物
CN102265339B (zh) * 2008-12-22 2014-11-19 花王株式会社 磁盘基板用研磨液组合物
US8491806B2 (en) * 2010-01-12 2013-07-23 International Business Machines Corporation Chemical-mechanical polishing formulation and methods of use
SG188621A1 (en) * 2010-10-21 2013-04-30 Moresco Corp Lubricant composition for polishing glass substrates and polishing slurry
JP5940270B2 (ja) 2010-12-09 2016-06-29 花王株式会社 研磨液組成物
US8865013B2 (en) * 2011-08-15 2014-10-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing tungsten
US9039914B2 (en) 2012-05-23 2015-05-26 Cabot Microelectronics Corporation Polishing composition for nickel-phosphorous-coated memory disks
JP6638208B2 (ja) * 2015-04-02 2020-01-29 日立化成株式会社 研磨剤、研磨剤用貯蔵液及び研磨方法
JP6429354B2 (ja) * 2015-05-20 2018-11-28 Hoya株式会社 ガラス基板の研磨方法、研磨液、ガラス基板の製造方法、磁気ディスク用ガラス基板の製造方法及び磁気ディスクの製造方法
JP6920306B2 (ja) * 2015-12-29 2021-08-18 シーエムシー マテリアルズ，インコーポレイティド アルキルアミン及びシクロデキストリンを含むｃｍｐ処理組成物
CN111879585B (zh) * 2020-07-27 2023-08-01 北京市永康药业有限公司 一种检测用药品自动研磨装置
CN117025288B (zh) * 2023-07-26 2025-11-04 国家石油天然气管网集团有限公司 一种喷砂浆料及其制备方法和应用

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US4769046A (en) 1985-07-25 1988-09-06 Fujimi Kanmazai Kogyo Kabushiki Kaisha Of Japan Process for polishing surface of memory hard disc
US5489233A (en) 1994-04-08 1996-02-06 Rodel, Inc. Polishing pads and methods for their use
US5527423A (en) 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
US5958794A (en) 1995-09-22 1999-09-28 Minnesota Mining And Manufacturing Company Method of modifying an exposed surface of a semiconductor wafer
US6117783A (en) 1996-07-25 2000-09-12 Ekc Technology, Inc. Chemical mechanical polishing composition and process
US5958288A (en) 1996-11-26 1999-09-28 Cabot Corporation Composition and slurry useful for metal CMP
KR20010006518A (ko) 1997-04-18 2001-01-26 매튜 네빌 반도체 기판용 연마 패드
US6126532A (en) 1997-04-18 2000-10-03 Cabot Corporation Polishing pads for a semiconductor substrate
US6001269A (en) 1997-05-20 1999-12-14 Rodel, Inc. Method for polishing a composite comprising an insulator, a metal, and titanium
US6117000A (en) 1998-07-10 2000-09-12 Cabot Corporation Polishing pad for a semiconductor substrate
TW476777B (en) 1998-08-31 2002-02-21 Hitachi Chemical Co Ltd Abrasive liquid for metal and method for polishing
JP2000109804A (ja) 1998-10-08 2000-04-18 Hitachi Chem Co Ltd Ｃｍｐ研磨剤及び基板の研磨方法
EP2194570A1 (en) 1998-12-28 2010-06-09 Hitachi Chemical Co., Ltd. Materials for polishing liquid for metal, polishing liquid for metal, mehtod for preparation thereof and polishing method using the same
US6290736B1 (en) 1999-02-09 2001-09-18 Sharp Laboratories Of America, Inc. Chemically active slurry for the polishing of noble metals and method for same
EP1118647A1 (en) 2000-01-18 2001-07-25 Praxair S.T. Technology, Inc. Polishing slurry
US6299795B1 (en) 2000-01-18 2001-10-09 Praxair S.T. Technology, Inc. Polishing slurry
JP3925041B2 (ja) 2000-05-31 2007-06-06 Ｊｓｒ株式会社 研磨パッド用組成物及びこれを用いた研磨パッド
JP3945964B2 (ja) 2000-06-01 2007-07-18 株式会社ルネサステクノロジ 研磨剤、研磨方法及び半導体装置の製造方法
US6468137B1 (en) 2000-09-07 2002-10-22 Cabot Microelectronics Corporation Method for polishing a memory or rigid disk with an oxidized halide-containing polishing system

Also Published As

Publication number Publication date
TW200404640A (en) 2004-04-01
TWI236948B (en) 2005-08-01
US6641630B1 (en) 2003-11-04
JP2004027224A (ja) 2004-01-29

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