JP4085782B2 - 窒化物半導体素子 - Google Patents

窒化物半導体素子 Download PDF

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Publication number
JP4085782B2
JP4085782B2 JP2002320954A JP2002320954A JP4085782B2 JP 4085782 B2 JP4085782 B2 JP 4085782B2 JP 2002320954 A JP2002320954 A JP 2002320954A JP 2002320954 A JP2002320954 A JP 2002320954A JP 4085782 B2 JP4085782 B2 JP 4085782B2
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Japan
Prior art keywords
layer
nitride semiconductor
type
doped
barrier layer
Prior art date
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Expired - Fee Related
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JP2002320954A
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English (en)
Japanese (ja)
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JP2003179260A5 (enrdf_load_stackoverflow
JP2003179260A (ja
Inventor
宏充 丸居
公二 谷沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
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Priority to JP2002320954A priority Critical patent/JP4085782B2/ja
Publication of JP2003179260A publication Critical patent/JP2003179260A/ja
Publication of JP2003179260A5 publication Critical patent/JP2003179260A5/ja
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Publication of JP4085782B2 publication Critical patent/JP4085782B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002320954A 2002-11-05 2002-11-05 窒化物半導体素子 Expired - Fee Related JP4085782B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002320954A JP4085782B2 (ja) 2002-11-05 2002-11-05 窒化物半導体素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002320954A JP4085782B2 (ja) 2002-11-05 2002-11-05 窒化物半導体素子

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP27394899A Division JP3460641B2 (ja) 1999-09-28 1999-09-28 窒化物半導体素子

Publications (3)

Publication Number Publication Date
JP2003179260A JP2003179260A (ja) 2003-06-27
JP2003179260A5 JP2003179260A5 (enrdf_load_stackoverflow) 2006-11-16
JP4085782B2 true JP4085782B2 (ja) 2008-05-14

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ID=19197591

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002320954A Expired - Fee Related JP4085782B2 (ja) 2002-11-05 2002-11-05 窒化物半導体素子

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JP (1) JP4085782B2 (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100831956B1 (ko) * 2004-02-24 2008-05-23 쇼와 덴코 가부시키가이샤 질화갈륨계 화합물 반도체 다층구조 및 그 제조방법
JP2006013463A (ja) * 2004-05-21 2006-01-12 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子
JP5201563B2 (ja) * 2004-11-16 2013-06-05 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子
KR100780212B1 (ko) 2006-03-30 2007-11-27 삼성전기주식회사 질화물 반도체 소자
KR101283233B1 (ko) 2007-06-25 2013-07-11 엘지이노텍 주식회사 발광 소자 및 그 제조방법
JP2010182993A (ja) * 2009-02-09 2010-08-19 Toyota Central R&D Labs Inc 半導体装置とその製造方法
JP2011159771A (ja) * 2010-01-29 2011-08-18 Nec Corp 窒化物半導体発光素子、窒化物半導体発光素子の製造方法、および電子装置

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Publication number Publication date
JP2003179260A (ja) 2003-06-27

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