JP4072352B2 - 窒化物系化合物半導体素子及びその作製方法 - Google Patents

窒化物系化合物半導体素子及びその作製方法 Download PDF

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Publication number
JP4072352B2
JP4072352B2 JP2002027985A JP2002027985A JP4072352B2 JP 4072352 B2 JP4072352 B2 JP 4072352B2 JP 2002027985 A JP2002027985 A JP 2002027985A JP 2002027985 A JP2002027985 A JP 2002027985A JP 4072352 B2 JP4072352 B2 JP 4072352B2
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Prior art keywords
crystal substrate
nitride
region
semiconductor crystal
compound semiconductor
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Expired - Fee Related
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JP2002027985A
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English (en)
Japanese (ja)
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JP2003229623A (ja
JP2003229623A5 (enExample
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好司 玉村
健作 元木
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Sony Corp
Sumitomo Electric Industries Ltd
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Sony Corp
Sumitomo Electric Industries Ltd
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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP2002027985A 2002-02-05 2002-02-05 窒化物系化合物半導体素子及びその作製方法 Expired - Fee Related JP4072352B2 (ja)

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JP2007323096A Division JP4786634B2 (ja) 2007-12-14 2007-12-14 窒化物系化合物半導体素子及びその作製方法

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JP2003229623A JP2003229623A (ja) 2003-08-15
JP2003229623A5 JP2003229623A5 (enExample) 2005-08-18
JP4072352B2 true JP4072352B2 (ja) 2008-04-09

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101910556B1 (ko) 2012-03-20 2018-10-22 서울반도체 주식회사 질화갈륨 기판을 갖는 발광 다이오드

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3916584B2 (ja) 2003-04-24 2007-05-16 シャープ株式会社 窒化物半導体レーザ装置
JP5217077B2 (ja) * 2004-02-20 2013-06-19 日亜化学工業株式会社 窒化物半導体素子及び窒化物半導体基板の製造方法、並びに窒化物半導体素子の製造方法
US8089093B2 (en) 2004-02-20 2012-01-03 Nichia Corporation Nitride semiconductor device including different concentrations of impurities
TWI885112B (zh) * 2020-04-14 2025-06-01 學校法人關西學院 半導體基板的製造方法、半導體基板以及成長層的形成方法
TWI885111B (zh) * 2020-04-14 2025-06-01 學校法人關西學院 半導體基板的製造方法、半導體基板以及成長層中的裂痕產生的抑制方法
EP4137614A4 (en) * 2020-04-14 2024-05-22 Kwansei Gakuin Educational Foundation METHOD FOR PRODUCING AN ALUMINUM NITRIDE SUBSTRATE, ALUMINUM NITRIDE SUBSTRATE AND METHOD FOR SUPPRESSING THE OCCURRENCE OF CRACKS IN AN ALUMINUM NITRIDE LAYER
JP7758909B2 (ja) * 2020-04-14 2025-10-23 学校法人関西学院 窒化アルミニウム基板の製造方法、窒化アルミニウム基板、及び、窒化アルミニウム層を形成する方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101910556B1 (ko) 2012-03-20 2018-10-22 서울반도체 주식회사 질화갈륨 기판을 갖는 발광 다이오드

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