JP2006216772A - 光集積型半導体発光素子 - Google Patents
光集積型半導体発光素子 Download PDFInfo
- Publication number
- JP2006216772A JP2006216772A JP2005027815A JP2005027815A JP2006216772A JP 2006216772 A JP2006216772 A JP 2006216772A JP 2005027815 A JP2005027815 A JP 2005027815A JP 2005027815 A JP2005027815 A JP 2005027815A JP 2006216772 A JP2006216772 A JP 2006216772A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- region
- layer
- nitride semiconductor
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 94
- 150000004767 nitrides Chemical class 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 239000013078 crystal Substances 0.000 claims abstract description 7
- 238000005253 cladding Methods 0.000 claims description 20
- 230000003287 optical effect Effects 0.000 claims description 19
- 230000000149 penetrating effect Effects 0.000 claims description 5
- 230000010354 integration Effects 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 68
- 239000012141 concentrate Substances 0.000 abstract 1
- 230000001902 propagating effect Effects 0.000 abstract 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 31
- 238000000034 method Methods 0.000 description 13
- 229910002601 GaN Inorganic materials 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000010931 gold Substances 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000010030 laminating Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2201—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure in a specific crystallographic orientation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02389—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0217—Removal of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Geometry (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Semiconductor Lasers (AREA)
Abstract
【解決手段】第1平均転位密度を有する結晶からなる低欠陥領域10A中に第1平均転位密度より高い第2平均転位密度を有する高欠陥領域10Bを1または2以上有する基板10と、基板10上に形成され、複数の発光素子構造を有すると共に、高欠陥領域10Bに対応する領域を含む領域(高欠陥領域30B)に溝19を有するIII−V族窒化物半導体層30とを備える。この溝19は、基板10の高欠陥領域10Bから伝播した転位の集中する高欠陥領域30Bの一部をIII−V族窒化物半導体層30から除去することにより設けられており、これにより電極から注入された電流の一部が発光領域を迂回してリークするのが抑制される。
【選択図】 図1
Description
Claims (8)
- 第1平均転位密度を有する結晶からなる第1領域中に前記第1平均転位密度より高い第2平均転位密度を有する第2領域を1または2以上有する窒化物半導体基板と、
前記窒化物半導体基板上に形成され、複数の発光素子構造を有すると共に、前記第2領域に対応する領域を含む領域に第1の溝を有するIII−V族窒化物半導体層と
を備えたことを特徴とする光集積型半導体発光素子。 - 前記窒化物半導体基板は、前記第1領域中に前記第2領域が規則的に配列された半導体基板の一部を切り出すことにより形成されている
ことを特徴とする請求項1に記載の光集積型半導体発光素子。 - 前記複数の発光素子構造は、それぞれ前記III−V族窒化物半導体層の前記第1領域に対応する領域内の、前記第1の溝と所定の距離隔てた位置に発光領域を有する
ことを特徴とする請求項1に記載の光集積型半導体発光素子。 - 前記第1の溝は、前記隣接する発光素子構造の間隙に形成されている
ことを特徴とする請求項3に記載の光集積型半導体発光素子。 - 前記複数の発光素子構造は、前記隣接する第1の溝の間隙に形成されている
ことを特徴とする請求項3に記載の光集積型半導体発光素子。 - 前記III−V族窒化物半導体層は、前記第1領域に対応する領域の、前記隣接する発光素子構造の間隙に形成された第2の溝を有する
ことを特徴とする請求項5に記載の光集積型半導体発光素子。 - 前記複数の発光素子構造は、前記窒化物半導体基板上に、少なくとも第1導電型クラッド層、活性層、第2導電型クラッド層をこの順に積層してなるレーザ構造であり、
前記第1の溝は、少なくとも前記第2導電型クラッド層、活性層および第1導電型クラッド層を貫通する深さを有する
ことを特徴とする請求項1に記載の光集積型半導体発光素子。 - 前記第2領域は、前記窒化物半導体基板の表面において、連続帯状、断続的帯状、および分散した点状のいずれか1つの配列をなす
ことを特徴とする請求項1に記載の光集積型半導体発光素子。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005027815A JP4617907B2 (ja) | 2005-02-03 | 2005-02-03 | 光集積型半導体発光素子 |
US11/344,468 US8513683B2 (en) | 2005-02-03 | 2006-01-31 | Optical integrated semiconductor light emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005027815A JP4617907B2 (ja) | 2005-02-03 | 2005-02-03 | 光集積型半導体発光素子 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2006216772A true JP2006216772A (ja) | 2006-08-17 |
JP2006216772A5 JP2006216772A5 (ja) | 2007-08-09 |
JP4617907B2 JP4617907B2 (ja) | 2011-01-26 |
Family
ID=36931269
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005027815A Expired - Fee Related JP4617907B2 (ja) | 2005-02-03 | 2005-02-03 | 光集積型半導体発光素子 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8513683B2 (ja) |
JP (1) | JP4617907B2 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009021506A (ja) * | 2007-07-13 | 2009-01-29 | Sharp Corp | 半導体レーザアレイ、発光装置、半導体レーザアレイの製造方法および発光装置の製造方法 |
JP2010087083A (ja) * | 2008-09-30 | 2010-04-15 | Sony Corp | 半導体レーザの製造方法、半導体レーザ、光ピックアップおよび光ディスク装置 |
JP2014078743A (ja) * | 2008-02-22 | 2014-05-01 | Osram Opto Semiconductors Gmbh | オプトエレクトロニクス半導体本体およびオプトエレクトロニクス半導体本体の製造方法 |
JPWO2021251191A1 (ja) * | 2020-06-12 | 2021-12-16 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4850453B2 (ja) * | 2005-08-11 | 2012-01-11 | ローム株式会社 | 半導体発光装置の製造方法及び半導体発光装置 |
KR101280040B1 (ko) * | 2006-09-12 | 2013-07-01 | 삼성전자주식회사 | 멀티 빔형 레이저 장치 및 이를 이용한 화상형성장치 |
US20080130698A1 (en) * | 2006-11-30 | 2008-06-05 | Sanyo Electric Co., Ltd. | Nitride-based semiconductor device and method of fabricating the same |
DE102009058345B4 (de) * | 2009-12-15 | 2021-05-12 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterlaser |
GB2483689A (en) * | 2010-09-16 | 2012-03-21 | Sharp Kk | A method of reducing the density of threading dislocations in light emitting devices, by the selective creation of cavities |
JP2014049616A (ja) * | 2012-08-31 | 2014-03-17 | Sony Corp | ダイオードおよびダイオードの製造方法 |
DE102016106493A1 (de) * | 2016-04-08 | 2017-10-12 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von optoelektronischen Halbleiterbauelementen und optoelektronisches Halbleiterbauelement |
DE102022104563A1 (de) | 2022-02-25 | 2023-08-31 | Ams-Osram International Gmbh | Verfahren zur herstellung einer halbleiterstruktur und halbleiterstruktur |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003124572A (ja) * | 2001-10-12 | 2003-04-25 | Sumitomo Electric Ind Ltd | 半導体発光素子の製造方法、半導体発光素子、半導体素子の製造方法、半導体素子、素子の製造方法および素子 |
JP2003124573A (ja) * | 2001-10-12 | 2003-04-25 | Sumitomo Electric Ind Ltd | 半導体発光素子の製造方法、半導体素子の製造方法、素子の製造方法、窒化物系iii−v族化合物半導体層の成長方法、半導体層の成長方法および層の成長方法 |
JP2004014943A (ja) * | 2002-06-10 | 2004-01-15 | Sony Corp | マルチビーム型半導体レーザ、半導体発光素子および半導体装置 |
JP2004327655A (ja) * | 2003-04-24 | 2004-11-18 | Sharp Corp | 窒化物半導体レーザ素子、その製造方法および半導体光学装置 |
JP2004356586A (ja) * | 2003-05-30 | 2004-12-16 | Sony Corp | 半導体レーザ装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001244570A (ja) * | 2000-02-29 | 2001-09-07 | Sony Corp | 半導体レーザ、レーザカプラおよびデータ再生装置、データ記録装置ならびに半導体レーザの製造方法 |
US6939730B2 (en) * | 2001-04-24 | 2005-09-06 | Sony Corporation | Nitride semiconductor, semiconductor device, and method of manufacturing the same |
JP2004193330A (ja) * | 2002-12-11 | 2004-07-08 | Sharp Corp | モノリシック多波長レーザ素子とその製法 |
US7372077B2 (en) * | 2003-02-07 | 2008-05-13 | Sanyo Electric Co., Ltd. | Semiconductor device |
US7462882B2 (en) * | 2003-04-24 | 2008-12-09 | Sharp Kabushiki Kaisha | Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus |
JP4322187B2 (ja) * | 2004-08-19 | 2009-08-26 | シャープ株式会社 | 窒化物半導体発光素子 |
-
2005
- 2005-02-03 JP JP2005027815A patent/JP4617907B2/ja not_active Expired - Fee Related
-
2006
- 2006-01-31 US US11/344,468 patent/US8513683B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003124572A (ja) * | 2001-10-12 | 2003-04-25 | Sumitomo Electric Ind Ltd | 半導体発光素子の製造方法、半導体発光素子、半導体素子の製造方法、半導体素子、素子の製造方法および素子 |
JP2003124573A (ja) * | 2001-10-12 | 2003-04-25 | Sumitomo Electric Ind Ltd | 半導体発光素子の製造方法、半導体素子の製造方法、素子の製造方法、窒化物系iii−v族化合物半導体層の成長方法、半導体層の成長方法および層の成長方法 |
JP2004014943A (ja) * | 2002-06-10 | 2004-01-15 | Sony Corp | マルチビーム型半導体レーザ、半導体発光素子および半導体装置 |
JP2004327655A (ja) * | 2003-04-24 | 2004-11-18 | Sharp Corp | 窒化物半導体レーザ素子、その製造方法および半導体光学装置 |
JP2004356586A (ja) * | 2003-05-30 | 2004-12-16 | Sony Corp | 半導体レーザ装置 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009021506A (ja) * | 2007-07-13 | 2009-01-29 | Sharp Corp | 半導体レーザアレイ、発光装置、半導体レーザアレイの製造方法および発光装置の製造方法 |
JP2014078743A (ja) * | 2008-02-22 | 2014-05-01 | Osram Opto Semiconductors Gmbh | オプトエレクトロニクス半導体本体およびオプトエレクトロニクス半導体本体の製造方法 |
JP2010087083A (ja) * | 2008-09-30 | 2010-04-15 | Sony Corp | 半導体レーザの製造方法、半導体レーザ、光ピックアップおよび光ディスク装置 |
US8896002B2 (en) | 2008-09-30 | 2014-11-25 | Sony Corporation | Method for producing semiconductor laser, semiconductor laser, optical pickup, and optical disk drive |
JPWO2021251191A1 (ja) * | 2020-06-12 | 2021-12-16 | ||
WO2021251191A1 (ja) | 2020-06-12 | 2021-12-16 | 日亜化学工業株式会社 | レーザダイオード素子及びその製造方法 |
JP7473839B2 (ja) | 2020-06-12 | 2024-04-24 | 日亜化学工業株式会社 | レーザダイオード素子及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US8513683B2 (en) | 2013-08-20 |
US20060192209A1 (en) | 2006-08-31 |
JP4617907B2 (ja) | 2011-01-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4617907B2 (ja) | 光集積型半導体発光素子 | |
JP4352337B2 (ja) | 半導体レーザおよび半導体レーザ装置 | |
JP4169821B2 (ja) | 発光ダイオード | |
US8368183B2 (en) | Nitride semiconductor device | |
US7813400B2 (en) | Group-III nitride based laser diode and method for fabricating same | |
US20080217632A1 (en) | Gan-Based III-V Compound Semiconductor Light-Emitting Element and Method for Manufacturing Thereof | |
JP2008141187A (ja) | 窒化物半導体レーザ装置 | |
KR20060036488A (ko) | 반도체 레이저 소자 및 그 제조방법 | |
JP2008182275A (ja) | 窒化物系半導体発光素子 | |
JPWO2009078482A1 (ja) | 半導体発光素子 | |
JP4493041B2 (ja) | 窒化物半導体発光素子 | |
WO2018020793A1 (ja) | 半導体発光素子および半導体発光素子の製造方法 | |
JP2004134772A (ja) | 窒化物系半導体発光素子 | |
JP2009038408A (ja) | 半導体発光素子 | |
JP4780376B2 (ja) | 半導体発光素子 | |
US6683324B2 (en) | Semiconductor laser device in which thicknesses of optical guide region and AlGaN cladding layers satisfy predetermined condition | |
JP4890509B2 (ja) | 半導体発光素子の製造方法 | |
JP5079613B2 (ja) | 窒化物系半導体レーザ素子およびその製造方法 | |
JP2004186708A (ja) | 窒化ガリウム系半導体レーザ素子 | |
JP4741055B2 (ja) | 半導体発光素子 | |
JP2011151424A (ja) | 複数ビーム型の半導体発光素子 | |
JP4964027B2 (ja) | 窒化物系半導体レーザ素子の作製方法 | |
JP5236789B2 (ja) | 半導体発光素子の製造方法 | |
JP3950473B2 (ja) | 化合物半導体レーザ | |
JP2010129581A (ja) | 窒化物系半導体レーザ素子及びその作製方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070621 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070621 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100420 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100427 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100616 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100928 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20101011 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131105 Year of fee payment: 3 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 4617907 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131105 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |