JP2006216772A5 - - Google Patents
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- JP2006216772A5 JP2006216772A5 JP2005027815A JP2005027815A JP2006216772A5 JP 2006216772 A5 JP2006216772 A5 JP 2006216772A5 JP 2005027815 A JP2005027815 A JP 2005027815A JP 2005027815 A JP2005027815 A JP 2005027815A JP 2006216772 A5 JP2006216772 A5 JP 2006216772A5
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Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005027815A JP4617907B2 (ja) | 2005-02-03 | 2005-02-03 | 光集積型半導体発光素子 |
US11/344,468 US8513683B2 (en) | 2005-02-03 | 2006-01-31 | Optical integrated semiconductor light emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005027815A JP4617907B2 (ja) | 2005-02-03 | 2005-02-03 | 光集積型半導体発光素子 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2006216772A JP2006216772A (ja) | 2006-08-17 |
JP2006216772A5 true JP2006216772A5 (ja) | 2007-08-09 |
JP4617907B2 JP4617907B2 (ja) | 2011-01-26 |
Family
ID=36931269
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005027815A Expired - Fee Related JP4617907B2 (ja) | 2005-02-03 | 2005-02-03 | 光集積型半導体発光素子 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8513683B2 (ja) |
JP (1) | JP4617907B2 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4850453B2 (ja) * | 2005-08-11 | 2012-01-11 | ローム株式会社 | 半導体発光装置の製造方法及び半導体発光装置 |
KR101280040B1 (ko) * | 2006-09-12 | 2013-07-01 | 삼성전자주식회사 | 멀티 빔형 레이저 장치 및 이를 이용한 화상형성장치 |
US20080130698A1 (en) * | 2006-11-30 | 2008-06-05 | Sanyo Electric Co., Ltd. | Nitride-based semiconductor device and method of fabricating the same |
JP2009021506A (ja) * | 2007-07-13 | 2009-01-29 | Sharp Corp | 半導体レーザアレイ、発光装置、半導体レーザアレイの製造方法および発光装置の製造方法 |
DE102008018038A1 (de) * | 2008-02-22 | 2009-08-27 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines optoelektronischen Halbleiterkörpers |
JP5093033B2 (ja) | 2008-09-30 | 2012-12-05 | ソニー株式会社 | 半導体レーザの製造方法、半導体レーザ、光ピックアップおよび光ディスク装置 |
DE102009058345B4 (de) * | 2009-12-15 | 2021-05-12 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterlaser |
GB2483689A (en) * | 2010-09-16 | 2012-03-21 | Sharp Kk | A method of reducing the density of threading dislocations in light emitting devices, by the selective creation of cavities |
JP2014049616A (ja) * | 2012-08-31 | 2014-03-17 | Sony Corp | ダイオードおよびダイオードの製造方法 |
DE102016106493A1 (de) * | 2016-04-08 | 2017-10-12 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von optoelektronischen Halbleiterbauelementen und optoelektronisches Halbleiterbauelement |
EP4167405A4 (en) * | 2020-06-12 | 2024-07-10 | Nichia Corp | LASER DIODE ELEMENT AND MANUFACTURING METHOD THEREOF |
DE102022104563A1 (de) | 2022-02-25 | 2023-08-31 | Ams-Osram International Gmbh | Verfahren zur herstellung einer halbleiterstruktur und halbleiterstruktur |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001244570A (ja) * | 2000-02-29 | 2001-09-07 | Sony Corp | 半導体レーザ、レーザカプラおよびデータ再生装置、データ記録装置ならびに半導体レーザの製造方法 |
US6939730B2 (en) * | 2001-04-24 | 2005-09-06 | Sony Corporation | Nitride semiconductor, semiconductor device, and method of manufacturing the same |
JP4290358B2 (ja) * | 2001-10-12 | 2009-07-01 | 住友電気工業株式会社 | 半導体発光素子の製造方法 |
JP4388720B2 (ja) * | 2001-10-12 | 2009-12-24 | 住友電気工業株式会社 | 半導体発光素子の製造方法 |
JP2004014943A (ja) * | 2002-06-10 | 2004-01-15 | Sony Corp | マルチビーム型半導体レーザ、半導体発光素子および半導体装置 |
JP2004193330A (ja) * | 2002-12-11 | 2004-07-08 | Sharp Corp | モノリシック多波長レーザ素子とその製法 |
US7372077B2 (en) * | 2003-02-07 | 2008-05-13 | Sanyo Electric Co., Ltd. | Semiconductor device |
US7462882B2 (en) * | 2003-04-24 | 2008-12-09 | Sharp Kabushiki Kaisha | Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus |
JP2004327655A (ja) * | 2003-04-24 | 2004-11-18 | Sharp Corp | 窒化物半導体レーザ素子、その製造方法および半導体光学装置 |
JP4501359B2 (ja) * | 2003-05-30 | 2010-07-14 | ソニー株式会社 | 半導体レーザ装置 |
JP4322187B2 (ja) * | 2004-08-19 | 2009-08-26 | シャープ株式会社 | 窒化物半導体発光素子 |
-
2005
- 2005-02-03 JP JP2005027815A patent/JP4617907B2/ja not_active Expired - Fee Related
-
2006
- 2006-01-31 US US11/344,468 patent/US8513683B2/en active Active
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