JP2003229623A5 - - Google Patents
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- Publication number
- JP2003229623A5 JP2003229623A5 JP2002027985A JP2002027985A JP2003229623A5 JP 2003229623 A5 JP2003229623 A5 JP 2003229623A5 JP 2002027985 A JP2002027985 A JP 2002027985A JP 2002027985 A JP2002027985 A JP 2002027985A JP 2003229623 A5 JP2003229623 A5 JP 2003229623A5
- Authority
- JP
- Japan
- Prior art keywords
- crystal substrate
- semiconductor crystal
- nitride
- region
- compound semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 82
- 239000000758 substrate Substances 0.000 claims 54
- 239000013078 crystal Substances 0.000 claims 51
- 230000007547 defect Effects 0.000 claims 44
- 150000001875 compounds Chemical class 0.000 claims 19
- 150000004767 nitrides Chemical class 0.000 claims 19
- -1 nitride compound Chemical class 0.000 claims 13
- 238000004519 manufacturing process Methods 0.000 claims 7
- 230000000149 penetrating effect Effects 0.000 claims 6
- 238000005468 ion implantation Methods 0.000 claims 5
- 239000000463 material Substances 0.000 claims 4
- 238000002347 injection Methods 0.000 claims 3
- 239000007924 injection Substances 0.000 claims 3
- 238000000034 method Methods 0.000 claims 2
- 230000002950 deficient Effects 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002027985A JP4072352B2 (ja) | 2002-02-05 | 2002-02-05 | 窒化物系化合物半導体素子及びその作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002027985A JP4072352B2 (ja) | 2002-02-05 | 2002-02-05 | 窒化物系化合物半導体素子及びその作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007323096A Division JP4786634B2 (ja) | 2007-12-14 | 2007-12-14 | 窒化物系化合物半導体素子及びその作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003229623A JP2003229623A (ja) | 2003-08-15 |
| JP2003229623A5 true JP2003229623A5 (enExample) | 2005-08-18 |
| JP4072352B2 JP4072352B2 (ja) | 2008-04-09 |
Family
ID=27749343
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002027985A Expired - Fee Related JP4072352B2 (ja) | 2002-02-05 | 2002-02-05 | 窒化物系化合物半導体素子及びその作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4072352B2 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3916584B2 (ja) | 2003-04-24 | 2007-05-16 | シャープ株式会社 | 窒化物半導体レーザ装置 |
| JP5217077B2 (ja) * | 2004-02-20 | 2013-06-19 | 日亜化学工業株式会社 | 窒化物半導体素子及び窒化物半導体基板の製造方法、並びに窒化物半導体素子の製造方法 |
| US8089093B2 (en) | 2004-02-20 | 2012-01-03 | Nichia Corporation | Nitride semiconductor device including different concentrations of impurities |
| KR101910556B1 (ko) | 2012-03-20 | 2018-10-22 | 서울반도체 주식회사 | 질화갈륨 기판을 갖는 발광 다이오드 |
| TWI885112B (zh) * | 2020-04-14 | 2025-06-01 | 學校法人關西學院 | 半導體基板的製造方法、半導體基板以及成長層的形成方法 |
| TWI885111B (zh) * | 2020-04-14 | 2025-06-01 | 學校法人關西學院 | 半導體基板的製造方法、半導體基板以及成長層中的裂痕產生的抑制方法 |
| EP4137614A4 (en) * | 2020-04-14 | 2024-05-22 | Kwansei Gakuin Educational Foundation | METHOD FOR PRODUCING AN ALUMINUM NITRIDE SUBSTRATE, ALUMINUM NITRIDE SUBSTRATE AND METHOD FOR SUPPRESSING THE OCCURRENCE OF CRACKS IN AN ALUMINUM NITRIDE LAYER |
| JP7758909B2 (ja) * | 2020-04-14 | 2025-10-23 | 学校法人関西学院 | 窒化アルミニウム基板の製造方法、窒化アルミニウム基板、及び、窒化アルミニウム層を形成する方法 |
-
2002
- 2002-02-05 JP JP2002027985A patent/JP4072352B2/ja not_active Expired - Fee Related
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